Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDV304P-F169

FDV304P-F169

P-CHANNEL DIGITAL FET

onsemi
3,327 -

RFQ

Tape & Reel (TR) - Last Time Buy P-Channel MOSFET (Metal Oxide) 25 V 460mA (Ta) 2.7V, 4.5V 1.1Ohm @ 500mA, 4.5V 1.5V @ 250µA 1.5 nC @ 4.5 V -8V 63 pF @ 10 V - 350mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
YJS4435A

YJS4435A

P-CH MOSFET 30V 10A SOP-8

Yangzhou Yangjie Electronic Technology Co.,Ltd
2,057 -

RFQ

YJS4435A

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active - - - - - - - - - - - - - Surface Mount
YJQ1216A

YJQ1216A

P-CH MOSFET 20V 16A DFN2020-6L-E

Yangzhou Yangjie Electronic Technology Co.,Ltd
2,302 -

RFQ

YJQ1216A

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 16A (Tc) 1.8V, 4.5V 19mOhm @ 10A, 4.5V 1V @ 250µA 72.8 nC @ 10 V ±10V 2992 pF @ 10 V - 18W (Tc) -55°C ~ 150°C (TJ) Surface Mount
YJJ09N03A

YJJ09N03A

N-CH MOSFET 30V 9A SOT-23-6L

Yangzhou Yangjie Electronic Technology Co.,Ltd
3,339 -

RFQ

YJJ09N03A

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 9A (Ta) 4.5V, 10V 15mOhm @ 6A, 10V 2.5V @ 250µA 23.6 nC @ 10 V ±20V 1015 pF @ 15 V - 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
YJD20N06A

YJD20N06A

N-CH MOSFET 60V 20A TO-252

Yangzhou Yangjie Electronic Technology Co.,Ltd
3,792 -

RFQ

YJD20N06A

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 20A (Tc) 4.5V, 10V 43mOhm @ 20A, 10V 2.5V @ 250µA 15 nC @ 10 V ±20V 800 pF @ 30 V - 34W (Tc) -55°C ~ 175°C (TJ) Surface Mount
YJS4407A

YJS4407A

P-CH MOSFET 30V 12A SOP-8

Yangzhou Yangjie Electronic Technology Co.,Ltd
2,940 -

RFQ

YJS4407A

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 12A (Ta) 4.5V, 20V 10.5mOhm @ 12A, 20V 2.8V @ 250µA 40.1 nC @ 10 V ±25V 2152 pF @ 15 V - 3.2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
G6P06

G6P06

P60V,RD(MAX)<96M@-10V,RD(MAX)<14

Goford Semiconductor
8,000 -

RFQ

G6P06

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 60 V 6A (Tc) 4.5V, 10V 96mOhm @ 4A, 10V 3V @ 250µA 25 nC @ 10 V ±20V 930 pF @ 30 V - 4.1W (Tc) -55°C ~ 150°C (TJ) Surface Mount
YJQ40P03A

YJQ40P03A

P-CH MOSFET 30V 40A DFN3333-8L

Yangzhou Yangjie Electronic Technology Co.,Ltd
3,326 -

RFQ

YJQ40P03A

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 40A (Ta) 4.5V, 20V 13mOhm @ 20A, 20V 2.8V @ 250µA 40.1 nC @ 10 V ±25V 2152 pF @ 15 V - 32W (Ta) -55°C ~ 150°C (TJ) Surface Mount
YJQ3622A

YJQ3622A

N-CH MOSFET 30V 30A DFN3333-8L

Yangzhou Yangjie Electronic Technology Co.,Ltd
3,811 -

RFQ

YJQ3622A

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 30A 4.5V, 10V 13mOhm @ 20A, 10V 2.5V @ 250µA 23.6 nC @ 10 V ±20V 1015 pF @ 15 V Standard 21W (Tc) -55°C ~ 175°C (TJ) Surface Mount
YJQ50N03B

YJQ50N03B

N-CH MOSFET 30V 50A DFN3333-8L

Yangzhou Yangjie Electronic Technology Co.,Ltd
3,077 -

RFQ

YJQ50N03B

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active - - - - - - - - - - - - - Surface Mount
YJS7328A

YJS7328A

P-CH MOSFET 30V 10A SOP-8

Yangzhou Yangjie Electronic Technology Co.,Ltd
3,951 -

RFQ

YJS7328A

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 10A (Ta) 4.5V 23mOhm @ 10A, 10V 2.5V @ 250µA 28.7 nC @ 10 V ±20V 1500 pF @ 15 V Standard 3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
G12P04K

G12P04K

P40V,RD(MAX)<35M@-10V,RD(MAX)<45

Goford Semiconductor
2,522 -

RFQ

G12P04K

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 40 V 12A (Tc) 4.5V, 10V 35mOhm @ 6A, 10V 2.5V @ 250µA 25 nC @ 10 V ±20V 930 pF @ 20 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
YJG50N03A

YJG50N03A

N-CH MOSFET 30V 50A PDFN5060-8L-

Yangzhou Yangjie Electronic Technology Co.,Ltd
2,759 -

RFQ

YJG50N03A

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 4.7mOhm @ 15A, 10V 2.5V @ 250µA 54 nC @ 10 V ±20V 2504 pF @ 15 V - 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
YJQ35N04A

YJQ35N04A

N-CH MOSFET 40V 35A DFN3333-8L

Yangzhou Yangjie Electronic Technology Co.,Ltd
2,230 -

RFQ

YJQ35N04A

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 35A (Ta) 4.5V, 10V 8mOhm @ 20A, 10V 2V @ 250µA 29 nC @ 10 V ±20V 1500 pF @ 20 V - 4.1W (Ta), 40W (Tc) -55°C ~ 150°C (TJ) Surface Mount
YJQ55P02A

YJQ55P02A

P-CH MOSFET 20V 55A DFN3333-8L

Yangzhou Yangjie Electronic Technology Co.,Ltd
2,874 -

RFQ

YJQ55P02A

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 55A (Ta) 1.8V, 4.5V 8.3mOhm @ 15A, 4.5V 1V @ 250µA 12.7 nC @ 10 V ±10V 6358 pF @ 10 V - 3.2W (Ta), 38W (Tc) -55°C ~ 150°C (TJ) Surface Mount
YJG30N06A

YJG30N06A

N-CH MOSFET 60V 30A PDFN5060-8L-

Yangzhou Yangjie Electronic Technology Co.,Ltd
3,677 -

RFQ

YJG30N06A

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 4.5V, 10V 20mOhm @ 15A, 10V 2.5V @ 250µA 51 nC @ 10 V ±20V 2027 pF @ 30 V - 45W (Tc) -55°C ~ 150°C (TJ) Surface Mount
CSD18534KCS

CSD18534KCS

MOSFET N-CH 60V 45A/100A TO220-3

Texas Instruments
1,448 -

RFQ

CSD18534KCS

Ficha técnica

Tube NexFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 45A (Ta), 100A (Tc) 4.5V, 10V 9.5mOhm @ 40A, 10V 2.3V @ 250µA 24 nC @ 10 V ±20V 1880 pF @ 30 V - 107W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB4510PBF

IRFB4510PBF

MOSFET N-CH 100V 62A TO220AB

Infineon Technologies
994 -

RFQ

IRFB4510PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 62A (Tc) 10V 13.5mOhm @ 37A, 10V 4V @ 100µA 87 nC @ 10 V ±20V 3180 pF @ 50 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP040N06NAKSA1

IPP040N06NAKSA1

MOSFET N-CH 60V 20A/80A TO220-3

Infineon Technologies
326 -

RFQ

IPP040N06NAKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 20A (Ta), 80A (Tc) 6V, 10V 4mOhm @ 80A, 10V 2.8V @ 50µA 38 nC @ 10 V ±20V 2700 pF @ 30 V - 3W (Ta), 107W (Tc) -55°C ~ 175°C (TJ) Through Hole
STP6NK60Z

STP6NK60Z

MOSFET N-CH 600V 6A TO220AB

STMicroelectronics
990 -

RFQ

STP6NK60Z

Ficha técnica

Tube SuperMESH™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 6A (Tc) 10V 1.2Ohm @ 3A, 10V 4.5V @ 100µA 46 nC @ 10 V ±30V 905 pF @ 25 V - 110W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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