Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
APTM10UM02FAG

APTM10UM02FAG

MOSFET N-CH 100V 570A SP6

Microchip Technology
2,454 -

RFQ

APTM10UM02FAG

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 570A (Tc) 10V 2.5mOhm @ 200A, 10V 4V @ 10mA 1360 nC @ 10 V ±30V 40000 pF @ 25 V - 1660W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTM50UM13SAG

APTM50UM13SAG

MOSFET N-CH 500V 335A SP6

Microchip Technology
2,004 -

RFQ

APTM50UM13SAG

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 335A (Tc) 10V 15mOhm @ 167.5A, 10V 5V @ 20mA 800 nC @ 10 V ±30V 42200 pF @ 25 V - 3290W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTM100UM65DAG

APTM100UM65DAG

MOSFET N-CH 1000V 145A SP6

Microchip Technology
2,658 -

RFQ

APTM100UM65DAG

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 1000 V 145A (Tc) 10V 78mOhm @ 72.5A, 10V 5V @ 20mA 1068 nC @ 10 V ±30V 28500 pF @ 25 V - 3250W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTM120U10SAG

APTM120U10SAG

MOSFET N-CH 1200V 116A SP6

Microchip Technology
3,279 -

RFQ

APTM120U10SAG

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 1200 V 116A (Tc) 10V 120mOhm @ 58A, 10V 5V @ 20mA 1100 nC @ 10 V ±30V 28900 pF @ 25 V - 3290W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTM100UM65SAG

APTM100UM65SAG

MOSFET N-CH 1000V 145A SP6

Microchip Technology
2,421 -

RFQ

APTM100UM65SAG

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 1000 V 145A (Tc) 10V 78mOhm @ 72.5A, 10V 5V @ 20mA 1068 nC @ 10 V ±30V 28500 pF @ 25 V - 3250W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
FDMS86104

FDMS86104

MOSFET N-CH 100V 7A/16A 8PQFN

onsemi
3,301 -

RFQ

FDMS86104

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 7A (Ta), 16A (Tc) 6V, 10V 24mOhm @ 7A, 10V 4V @ 250µA 16 nC @ 10 V ±20V 923 pF @ 50 V - 2.5W (Ta), 73W (Tc) -55°C ~ 150°C (TJ) Surface Mount
VN0104N3-G

VN0104N3-G

MOSFET N-CH 40V 350MA TO92-3

Microchip Technology
223 -

RFQ

VN0104N3-G

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 40 V 350mA (Tj) 5V, 10V 3Ohm @ 1A, 10V 2.4V @ 1mA - ±20V 65 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQU13N10LTU

FQU13N10LTU

MOSFET N-CH 100V 10A IPAK

onsemi
810 -

RFQ

FQU13N10LTU

Ficha técnica

Tube QFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 100 V 10A (Tc) 5V, 10V 180mOhm @ 5A, 10V 2V @ 250µA 12 nC @ 5 V ±20V 520 pF @ 25 V - 2.5W (Ta), 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF9530NSTRLPBF

IRF9530NSTRLPBF

MOSFET P-CH 100V 14A D2PAK

Infineon Technologies
786 -

RFQ

IRF9530NSTRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active P-Channel MOSFET (Metal Oxide) 100 V 14A (Tc) 10V 200mOhm @ 8.4A, 10V 4V @ 250µA 58 nC @ 10 V ±20V 760 pF @ 25 V - 3.8W (Ta), 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFY36N20X3

IXFY36N20X3

MOSFET N-CH 200V 36A TO252AA

IXYS
2,439 -

RFQ

IXFY36N20X3

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 200 V 36A (Tc) 10V 45mOhm @ 18A, 10V 4.5V @ 500µA 21 nC @ 10 V ±20V 1425 pF @ 25 V - 176W (Tc) -55°C ~ 150°C (TJ) Surface Mount
VN0109N3-G

VN0109N3-G

MOSFET N-CH 90V 350MA TO92-3

Microchip Technology
560 -

RFQ

VN0109N3-G

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 90 V 350mA (Tj) 5V, 10V 3Ohm @ 1A, 10V 2.4V @ 1mA - ±20V 65 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
DMT6009LCT

DMT6009LCT

MOSFET N-CH 60V 37.2A TO220AB

Diodes Incorporated
193 -

RFQ

DMT6009LCT

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 37.2A (Tc) 4.5V, 10V 12mOhm @ 13.5A, 10V 2V @ 250µA 33.5 nC @ 10 V ±16V 1925 pF @ 30 V - 2.2W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF6215STRLPBF

IRF6215STRLPBF

MOSFET P-CH 150V 13A D2PAK

Infineon Technologies
2,223 -

RFQ

IRF6215STRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Not For New Designs P-Channel MOSFET (Metal Oxide) 150 V 13A (Tc) 10V 290mOhm @ 6.6A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 860 pF @ 25 V - 3.8W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF610PBF-BE3

IRF610PBF-BE3

MOSFET N-CH 200V 3.3A TO220AB

Vishay Siliconix
255 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 3.3A (Tc) 10V 1.5Ohm @ 2A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) Through Hole
AOT5N50

AOT5N50

MOSFET N-CH 500V 5A TO220

Alpha & Omega Semiconductor Inc.
207 -

RFQ

AOT5N50

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 10V 1.5Ohm @ 2.5A, 10V 4.5V @ 250µA 19 nC @ 10 V ±30V 620 pF @ 25 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLR014PBF

IRLR014PBF

MOSFET N-CH 60V 7.7A DPAK

Vishay Siliconix
733 -

RFQ

IRLR014PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 7.7A (Tc) 4V, 5V 200mOhm @ 4.6A, 5V 2V @ 250µA 8.4 nC @ 5 V ±10V 400 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STB4NK60ZT4

STB4NK60ZT4

MOSFET N-CH 600V 4A D2PAK

STMicroelectronics
1,540 -

RFQ

STB4NK60ZT4

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SuperMESH™ Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 2Ohm @ 2A, 10V 4.5V @ 50µA 26 nC @ 10 V ±30V 510 pF @ 25 V - 70W (Tc) 150°C (TJ) Surface Mount
IRF510PBF-BE3

IRF510PBF-BE3

MOSFET N-CH 100V 5.6A TO220AB

Vishay Siliconix
797 -

RFQ

IRF510PBF-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 5.6A (Tc) - 540mOhm @ 3.4A, 10V 4V @ 250µA 8.3 nC @ 10 V ±20V 180 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF830BPBF

IRF830BPBF

MOSFET N-CH 500V 5.3A TO220AB

Vishay Siliconix
371 -

RFQ

IRF830BPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 5.3A (Tc) 10V 1.5Ohm @ 2.5A, 10V 5V @ 250µA 20 nC @ 10 V ±30V 325 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
TN0104N3-G

TN0104N3-G

MOSFET N-CH 40V 450MA TO92-3

Microchip Technology
3,576 -

RFQ

TN0104N3-G

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 40 V 450mA (Ta) 3V, 10V 1.8Ohm @ 1A, 10V 1.6V @ 500µA - ±20V 70 pF @ 20 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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