Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
APT10026JFLL

APT10026JFLL

MOSFET N-CH 1000V 30A ISOTOP

Microchip Technology
2,492 -

RFQ

APT10026JFLL

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1000 V 30A (Tc) - 260mOhm @ 15A, 10V 5V @ 5mA 267 nC @ 10 V - 7114 pF @ 25 V - - - Chassis Mount
MCB60I1200TZ-TUB

MCB60I1200TZ-TUB

SICFET N-CH 1.2KV 90A TO268AA

IXYS
3,187 -

RFQ

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 90A (Tc) 20V 34mOhm @ 50A, 20V 4V @ 15mA 160 nC @ 20 V +20V, -5V 2790 pF @ 1000 V - - -40°C ~ 175°C (TJ) Surface Mount
APT12031JFLL

APT12031JFLL

MOSFET N-CH 1200V 30A ISOTOP

Microchip Technology
2,458 -

RFQ

APT12031JFLL

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1200 V 30A (Tc) 10V 330mOhm @ 15A, 10V 5V @ 5mA 365 nC @ 10 V ±30V 9480 pF @ 25 V - 690AW (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APTM100DA18TG

APTM100DA18TG

MOSFET N-CH 1000V 43A SP4

Microchip Technology
2,732 -

RFQ

APTM100DA18TG

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 1000 V 43A (Tc) 10V 210mOhm @ 21.5A, 10V 5V @ 5mA 372 nC @ 10 V ±30V 10400 pF @ 25 V - 780W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTM20SKM08TG

APTM20SKM08TG

MOSFET N-CH 200V 208A SP4

Microchip Technology
2,283 -

RFQ

APTM20SKM08TG

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 208A (Tc) 10V 10mOhm @ 104A, 10V 5V @ 5mA 280 nC @ 10 V ±30V 14400 pF @ 25 V - 781W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTM20DAM08TG

APTM20DAM08TG

MOSFET N-CH 200V 208A SP4

Microchip Technology
3,222 -

RFQ

APTM20DAM08TG

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 208A (Tc) 10V 10mOhm @ 104A, 10V 5V @ 5mA 280 nC @ 10 V ±30V 14400 pF @ 25 V - 781W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTM10DAM05TG

APTM10DAM05TG

MOSFET N-CH 100V 278A SP4

Microchip Technology
3,258 -

RFQ

APTM10DAM05TG

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 278A (Tc) 10V 5mOhm @ 125A, 10V 4V @ 5mA 700 nC @ 10 V ±30V 20000 pF @ 25 V - 780W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTM10SKM05TG

APTM10SKM05TG

MOSFET N-CH 100V 278A SP4

Microchip Technology
2,624 -

RFQ

APTM10SKM05TG

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 278A (Tc) 10V 5mOhm @ 125A, 10V 4V @ 5mA 700 nC @ 10 V ±30V 20000 pF @ 25 V - 780W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTC60DAM18CTG

APTC60DAM18CTG

MOSFET N-CH 600V 143A SP4

Microchip Technology
3,345 -

RFQ

APTC60DAM18CTG

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 143A (Tc) 10V 18mOhm @ 71.5A, 10V 3.9V @ 4mA 1036 nC @ 10 V ±30V 28000 pF @ 25 V - 833W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTM50DAM19G

APTM50DAM19G

MOSFET N-CH 500V 163A SP6

Microchip Technology
2,854 -

RFQ

APTM50DAM19G

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 163A (Tc) 10V 22.5mOhm @ 81.5A, 10V 5V @ 10mA 492 nC @ 10 V ±30V 22400 pF @ 25 V - 1136W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTM50SKM19G

APTM50SKM19G

MOSFET N-CH 500V 163A SP6

Microchip Technology
2,233 -

RFQ

APTM50SKM19G

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 163A (Tc) 10V 22.5mOhm @ 81.5A, 10V 5V @ 10mA 492 nC @ 10 V ±30V 22400 pF @ 25 V - 1136W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTM20DAM05G

APTM20DAM05G

MOSFET N-CH 200V 317A SP6

Microchip Technology
2,606 -

RFQ

APTM20DAM05G

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 317A (Tc) 10V 6mOhm @ 158.5A, 10V 5V @ 10mA 448 nC @ 10 V ±30V 27400 pF @ 25 V - 1136W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTM20DAM04G

APTM20DAM04G

MOSFET N-CH 200V 372A SP6

Microchip Technology
2,330 -

RFQ

APTM20DAM04G

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 372A (Tc) 10V 5mOhm @ 186A, 10V 5V @ 10mA 560 nC @ 10 V ±30V 28900 pF @ 25 V - 1250W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTM20SKM04G

APTM20SKM04G

MOSFET N-CH 200V 372A SP6

Microchip Technology
3,834 -

RFQ

APTM20SKM04G

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 372A (Tc) 10V 5mOhm @ 186A, 10V 5V @ 10mA 560 nC @ 10 V ±30V 28900 pF @ 25 V - 1250W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTM100DAM90G

APTM100DAM90G

MOSFET N-CH 1000V 78A SP6

Microchip Technology
2,178 -

RFQ

APTM100DAM90G

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 1000 V 78A (Tc) 10V 105mOhm @ 39A, 10V 5V @ 10mA 744 nC @ 10 V ±30V 20700 pF @ 25 V - 1250W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTM50DAM17G

APTM50DAM17G

MOSFET N-CH 500V 180A SP6

Microchip Technology
3,389 -

RFQ

APTM50DAM17G

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 180A (Tc) 10V 20mOhm @ 90A, 10V 5V @ 10mA 560 nC @ 10 V ±30V 28000 pF @ 25 V - 1250W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTM50SKM17G

APTM50SKM17G

MOSFET N-CH 500V 180A SP6

Microchip Technology
2,412 -

RFQ

APTM50SKM17G

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 180A (Tc) 10V 20mOhm @ 90A, 10V 5V @ 10mA 560 nC @ 10 V ±30V 28000 pF @ 25 V - 1250W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTM10DAM02G

APTM10DAM02G

MOSFET N-CH 100V 495A SP6

Microchip Technology
3,891 -

RFQ

APTM10DAM02G

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 495A (Tc) 10V 2.5mOhm @ 200A, 10V 4V @ 10mA 1360 nC @ 10 V ±30V 40000 pF @ 25 V - 1250W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTM10SKM02G

APTM10SKM02G

MOSFET N-CH 100V 495A SP6

Microchip Technology
2,219 -

RFQ

APTM10SKM02G

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 495A (Tc) 10V 2.5mOhm @ 200A, 10V 4V @ 10mA 1360 nC @ 10 V ±30V 40000 pF @ 25 V - 1250W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTM20UM04SAG

APTM20UM04SAG

MOSFET N-CH 200V 417A SP6

Microchip Technology
3,422 -

RFQ

APTM20UM04SAG

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 417A (Tc) 10V 5mOhm @ 208.5A, 10V 5V @ 10mA 560 nC @ 10 V ±30V 28800 pF @ 25 V - 1560W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário