Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTT140P10T

IXTT140P10T

MOSFET P-CH 100V 140A TO268

IXYS
3,644 -

RFQ

IXTT140P10T

Ficha técnica

Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 100 V 140A (Tc) 10V 12mOhm @ 70A, 10V 4V @ 250µA 400 nC @ 10 V ±15V 31400 pF @ 25 V - 568W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SCT3060ARC14

SCT3060ARC14

SICFET N-CH 650V 39A TO247-4L

Rohm Semiconductor
133 -

RFQ

SCT3060ARC14

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 650 V 39A (Tc) 18V 78mOhm @ 13A, 18V 5.6V @ 6.67mA 58 nC @ 18 V +22V, -4V 852 pF @ 500 V - 165W 175°C (TJ) Through Hole
IXTN660N04T4

IXTN660N04T4

MOSFET N-CH 40V 660A SOT227B

IXYS
2,459 -

RFQ

IXTN660N04T4

Ficha técnica

Tube Trench Active N-Channel MOSFET (Metal Oxide) 40 V 660A (Tc) 10V 0.85mOhm @ 100A, 10V 4V @ 250µA 860 nC @ 10 V ±15V 44000 pF @ 25 V Current Sensing 1040W (Tc) -55°C ~ 175°C (TJ) Chassis Mount
TK100L60W,VQ

TK100L60W,VQ

MOSFET N-CH 600V 100A TO3P

Toshiba Semiconductor and Storage
3,315 -

RFQ

TK100L60W,VQ

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 100A (Ta) 10V 18mOhm @ 50A, 10V 3.7V @ 5mA 360 nC @ 10 V ±30V 15000 pF @ 30 V Super Junction 797W (Tc) 150°C (TJ) Through Hole
IXFN60N80P

IXFN60N80P

MOSFET N-CH 800V 53A SOT-227B

IXYS
3,149 -

RFQ

IXFN60N80P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 53A (Tc) 10V 140mOhm @ 30A, 10V 5V @ 8mA 250 nC @ 10 V ±30V 18000 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFN150N65X2

IXFN150N65X2

MOSFET N-CH 650V 145A SOT227B

IXYS
3,115 -

RFQ

IXFN150N65X2

Ficha técnica

Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 145A (Tc) 10V 17mOhm @ 75A, 10V 5V @ 8mA 355 nC @ 10 V ±30V 21000 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXTN210P10T

IXTN210P10T

MOSFET P-CH 100V 210A SOT227B

IXYS
3,482 -

RFQ

IXTN210P10T

Ficha técnica

Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 100 V 210A (Tc) 10V 7.5mOhm @ 105A, 10V 4.5V @ 250µA 740 nC @ 10 V ±15V 69500 pF @ 25 V - 830W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
SCT3030ALHRC11

SCT3030ALHRC11

SICFET N-CH 650V 70A TO247N

Rohm Semiconductor
222 -

RFQ

SCT3030ALHRC11

Ficha técnica

Tube Automotive, AEC-Q101 Active N-Channel SiCFET (Silicon Carbide) 650 V 70A (Tc) 18V 39mOhm @ 27A, 18V 5.6V @ 13.3mA 104 nC @ 18 V +22V, -4V 1526 pF @ 500 V - 262W 175°C (TJ) Through Hole
IXTX4N300P3HV

IXTX4N300P3HV

MOSFET N-CH 3000V 4A TO247PLUSHV

IXYS
2,699 -

RFQ

IXTX4N300P3HV

Ficha técnica

Tube Polar P3™ Active N-Channel MOSFET (Metal Oxide) 3000 V 4A (Tc) 10V 12.5Ohm @ 2A, 10V 5V @ 250µA 139 nC @ 10 V ±20V 3680 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Through Hole
VMO580-02F

VMO580-02F

MOSFET N-CH 200V 580A Y3-LI

IXYS
2,129 -

RFQ

VMO580-02F

Ficha técnica

Bulk HiPerFET™ Active N-Channel MOSFET (Metal Oxide) 200 V 580A (Tc) 10V 3.8mOhm @ 430A, 10V 4V @ 50mA 2750 nC @ 10 V ±20V - - - -40°C ~ 150°C (TJ) Chassis Mount
BSM400C12P3G202

BSM400C12P3G202

SICFET N-CH 1200V 400A MODULE

Rohm Semiconductor
3,261 -

RFQ

BSM400C12P3G202

Ficha técnica

Tray - Active N-Channel SiCFET (Silicon Carbide) 1200 V 400A (Tc) - - 5.6V @ 106.8mA - +22V, -4V 17000 pF @ 10 V - 1570W (Tc) 175°C (TJ) Chassis Mount
RJP020N06T100

RJP020N06T100

MOSFET N-CH 60V 2A MPT3

Rohm Semiconductor
17,000 -

RFQ

RJP020N06T100

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 2A (Ta) 2.5V, 4.5V 240mOhm @ 2A, 4.5V 1.5V @ 1mA 10 nC @ 4 V ±12V 160 pF @ 10 V - 500mW (Ta) 150°C (TJ) Surface Mount
LND150N3-G

LND150N3-G

MOSFET N-CH 500V 30MA TO92-3

Microchip Technology
3,351 -

RFQ

LND150N3-G

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 500 V 30mA (Tj) 0V 1000Ohm @ 500µA, 0V - - ±20V 10 pF @ 25 V Depletion Mode 740mW (Ta) -55°C ~ 150°C (TJ) Through Hole
AOT1N60

AOT1N60

MOSFET N-CH 600V 1.3A TO220

Alpha & Omega Semiconductor Inc.
296 -

RFQ

AOT1N60

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 1.3A (Tc) 10V 9Ohm @ 650mA, 10V 4.5V @ 250µA 8 nC @ 10 V ±30V 160 pF @ 25 V - 41.7W (Tc) -55°C ~ 150°C (TJ) Through Hole
TN5325N3-G

TN5325N3-G

MOSFET N-CH 250V 215MA TO92-3

Microchip Technology
745 -

RFQ

TN5325N3-G

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 250 V 215mA (Ta) 4.5V, 10V 7Ohm @ 1A, 10V 2V @ 1mA - ±20V 110 pF @ 25 V - 740mW (Ta) - Through Hole
BUK9675-55A,118

BUK9675-55A,118

MOSFET N-CH 55V 20A D2PAK

Nexperia USA Inc.
872 -

RFQ

BUK9675-55A,118

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 20A (Tc) 4.5V, 10V 68mOhm @ 10A, 10V 2V @ 1mA - ±10V 643 pF @ 25 V - 62W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQU1N60CTU

FQU1N60CTU

MOSFET N-CH 600V 1A IPAK

onsemi
962 -

RFQ

FQU1N60CTU

Ficha técnica

Tube QFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 600 V 1A (Tc) 10V 11.5Ohm @ 500mA, 10V 4V @ 250µA 6.2 nC @ 10 V ±30V 170 pF @ 25 V - 2.5W (Ta), 28W (Tc) -55°C ~ 150°C (TJ) Through Hole
PSMN2R2-30YLC/GFX

PSMN2R2-30YLC/GFX

PSMN2R2-30YLC/GFX

NXP USA Inc.
2,907 -

RFQ

Bulk * Obsolete - - - - - - - - - - - - - -
PSMN2R9-25YLC/GFX

PSMN2R9-25YLC/GFX

PSMN2R9-25YLC/GFX

NXP USA Inc.
3,567 -

RFQ

Bulk * Obsolete - - - - - - - - - - - - - -
PSMN2R9-30MLC/GFX

PSMN2R9-30MLC/GFX

PSMN2R9-30MLC/GFX

NXP USA Inc.
3,114 -

RFQ

Bulk * Obsolete - - - - - - - - - - - - - -
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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