Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
APT60M75JVR

APT60M75JVR

MOSFET N-CH 600V 62A ISOTOP

Microchip Technology
2,922 -

RFQ

APT60M75JVR

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 600 V 62A (Tc) 10V 75mOhm @ 500mA, 10V 4V @ 5mA 1050 nC @ 10 V ±30V 19800 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APTM120DA30CT1G

APTM120DA30CT1G

MOSFET N-CH 1200V 31A SP1

Microchip Technology
2,969 -

RFQ

APTM120DA30CT1G

Ficha técnica

Bulk POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 1200 V 31A (Tc) 10V 360mOhm @ 25A, 10V 5V @ 2.5mA 560 nC @ 10 V ±30V 14560 pF @ 25 V - 657W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APT30M19JVFR

APT30M19JVFR

MOSFET N-CH 300V 130A ISOTOP

Microchip Technology
2,079 -

RFQ

APT30M19JVFR

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 300 V 130A (Tc) 10V 19mOhm @ 500mA, 10V 4V @ 5mA 975 nC @ 10 V ±30V 21600 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT8015JVFR

APT8015JVFR

MOSFET N-CH 800V 44A ISOTOP

Microchip Technology
3,487 -

RFQ

APT8015JVFR

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 800 V 44A (Tc) - 150mOhm @ 500mA, 10V 4V @ 5mA 285 nC @ 10 V - 17650 pF @ 25 V - - - Chassis Mount
IXTF1R4N450

IXTF1R4N450

MOSFET N-CH 4500V 1.4A I4PAC

IXYS
2,225 -

RFQ

IXTF1R4N450

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 4500 V 1.4A (Tc) 10V 40Ohm @ 50mA, 10V 6V @ 250µA 88 nC @ 10 V ±20V 3300 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT10025JVR

APT10025JVR

MOSFET N-CH 1000V 34A ISOTOP

Microchip Technology
3,198 -

RFQ

APT10025JVR

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 1000 V 34A (Tc) - 250mOhm @ 500mA, 10V 4V @ 5mA 990 nC @ 10 V - 18000 pF @ 25 V - - - Chassis Mount
APL602J

APL602J

MOSFET N-CH 600V 43A ISOTOP

Microchip Technology
3,531 -

RFQ

APL602J

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 43A (Tc) 12V 125mOhm @ 21.5A, 12V 4V @ 2.5mA - ±30V 9000 pF @ 25 V - 565W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT10025JVFR

APT10025JVFR

MOSFET N-CH 1000V 34A ISOTOP

Microchip Technology
2,059 -

RFQ

APT10025JVFR

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 1000 V 34A (Tc) - 250mOhm @ 500mA, 10V 4V @ 5mA 990 nC @ 10 V - 18000 pF @ 25 V - - - Chassis Mount
FDB14N30TM

FDB14N30TM

MOSFET N-CH 300V 14A D2PAK

onsemi
10,310 -

RFQ

FDB14N30TM

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) UniFET™ Last Time Buy N-Channel MOSFET (Metal Oxide) 300 V 14A (Tc) 10V 290mOhm @ 7A, 10V 5V @ 250µA 25 nC @ 10 V ±30V 1060 pF @ 25 V - 140W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRL540NPBF

IRL540NPBF

MOSFET N-CH 100V 36A TO220AB

Infineon Technologies
13,421 -

RFQ

IRL540NPBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 36A (Tc) 4V, 10V 44mOhm @ 18A, 10V 2V @ 250µA 74 nC @ 5 V ±16V 1800 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFD9120PBF

IRFD9120PBF

MOSFET P-CH 100V 1A 4DIP

Vishay Siliconix
547 -

RFQ

IRFD9120PBF

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 100 V 1A (Ta) 10V 600mOhm @ 600mA, 10V 4V @ 250µA 18 nC @ 10 V ±20V 390 pF @ 25 V - 1.3W (Ta) -55°C ~ 175°C (TJ) Through Hole
IRF5210STRLPBF

IRF5210STRLPBF

MOSFET P-CH 100V 38A D2PAK

Infineon Technologies
3,633 -

RFQ

IRF5210STRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active P-Channel MOSFET (Metal Oxide) 100 V 38A (Tc) 10V 60mOhm @ 38A, 10V 4V @ 250µA 230 nC @ 10 V ±20V 2780 pF @ 25 V - 3.1W (Ta), 170W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQP27P06

FQP27P06

MOSFET P-CH 60V 27A TO220-3

onsemi
3,170 -

RFQ

FQP27P06

Ficha técnica

Tube QFET® Active P-Channel MOSFET (Metal Oxide) 60 V 27A (Tc) 10V 70mOhm @ 13.5A, 10V 4V @ 250µA 43 nC @ 10 V ±25V 1400 pF @ 25 V - 120W (Tc) -55°C ~ 175°C (TJ) Through Hole
PSMN2R8-40PS,127

PSMN2R8-40PS,127

MOSFET N-CH 40V 100A TO220AB

Nexperia USA Inc.
2,711 -

RFQ

PSMN2R8-40PS,127

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 2.8mOhm @ 10A, 10V 4V @ 1mA 71 nC @ 10 V ±20V 4491 pF @ 20 V - 211W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF2805PBF

IRF2805PBF

MOSFET N-CH 55V 75A TO220AB

Infineon Technologies
3,061 -

RFQ

IRF2805PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 4.7mOhm @ 104A, 10V 4V @ 250µA 230 nC @ 10 V ±20V 5110 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) Through Hole
STP120NF10

STP120NF10

MOSFET N-CH 100V 110A TO220AB

STMicroelectronics
7,580 -

RFQ

STP120NF10

Ficha técnica

Tube STripFET™ II Active N-Channel MOSFET (Metal Oxide) 100 V 110A (Tc) 10V 10.5mOhm @ 60A, 10V 4V @ 250µA 233 nC @ 10 V ±20V 5200 pF @ 25 V - 312W (Tc) -55°C ~ 175°C (TJ) Through Hole
STW45N65M5

STW45N65M5

MOSFET N-CH 650V 35A TO247

STMicroelectronics
2,412 -

RFQ

STW45N65M5

Ficha técnica

Tube MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 35A (Tc) 10V 78mOhm @ 19.5A, 10V 5V @ 250µA 91 nC @ 10 V ±20V 3375 pF @ 100 V - 210W (Tc) 150°C (TJ) Through Hole
IXFA6N120P

IXFA6N120P

MOSFET N-CH 1200V 6A TO263

IXYS
267 -

RFQ

IXFA6N120P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 6A (Tc) 10V 2.4Ohm @ 500mA, 10V 5V @ 1mA 92 nC @ 10 V ±30V 2830 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
APT20M38SVRG

APT20M38SVRG

MOSFET N-CH 200V 67A D3PAK

Microchip Technology
2,226 -

RFQ

APT20M38SVRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 200 V 67A (Tc) 10V 38mOhm @ 500mA, 10V 4V @ 1mA 225 nC @ 10 V ±30V 6120 pF @ 25 V - 370W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTK180N15P

IXTK180N15P

MOSFET N-CH 150V 180A TO264

IXYS
2,877 -

RFQ

IXTK180N15P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 150 V 180A (Tc) 10V 10mOhm @ 90A, 10V 5V @ 500µA 240 nC @ 10 V ±20V 7000 pF @ 25 V - 800W (Tc) -55°C ~ 175°C (TJ) Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário