Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPB65R099CFD7AATMA1

IPB65R099CFD7AATMA1

MOSFET N-CH 650V 24A TO263-3

Infineon Technologies
370 -

RFQ

IPB65R099CFD7AATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, CoolMOS™ CFD7A Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 99mOhm @ 12.5A, 10V 4.5V @ 630µA 53 nC @ 10 V ±20V 2513 pF @ 400 V - 127W (Tc) -40°C ~ 150°C (TJ) Surface Mount
HUF75852G3

HUF75852G3

MOSFET N-CH 150V 75A TO247-3

Fairchild Semiconductor
2,726 -

RFQ

HUF75852G3

Ficha técnica

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 150 V 75A (Tc) 10V 16mOhm @ 75A, 10V 4V @ 250µA 480 nC @ 20 V ±20V 7690 pF @ 25 V - 500W (Tc) -55°C ~ 175°C (TJ) Through Hole
P3M12160K4

P3M12160K4

SICFET N-CH 1200V 19A TO-247-4

PN Junction Semiconductor
200 -

RFQ

P3M12160K4

Ficha técnica

Tube P3M Active N-Channel SiCFET (Silicon Carbide) 1200 V 19A 15V 192mOhm @ 10A, 15V 2.4V @ 2.5mA (Typ) - +21V, -8V - - 110W -55°C ~ 175°C (TJ) Through Hole
IPB60R045P7ATMA1

IPB60R045P7ATMA1

MOSFET N-CH 600V 61A TO263-3-2

Infineon Technologies
336 -

RFQ

IPB60R045P7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 61A (Tc) 10V 45mOhm @ 22.5A, 10V 4V @ 1.08mA 90 nC @ 10 V ±20V 3891 pF @ 400 V - 201W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB200N25N3GATMA1

IPB200N25N3GATMA1

MOSFET N-CH 250V 64A D2PAK

Infineon Technologies
722 -

RFQ

IPB200N25N3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 250 V 64A (Tc) 10V 20mOhm @ 64A, 10V 4V @ 270µA 86 nC @ 10 V ±20V 7100 pF @ 100 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPDD60R055CFD7XTMA1

IPDD60R055CFD7XTMA1

MOSFET N-CH 600V 52A HDSOP-10

Infineon Technologies
1,101 -

RFQ

IPDD60R055CFD7XTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 600 V 52A (Tc) - 55mOhm @ 15.1A, 10V 4.5V @ 760µA 67 nC @ 10 V ±20V 2724 pF @ 400 V - 329W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB65R065C7ATMA2

IPB65R065C7ATMA2

MOSFET N-CH 650V 33A TO263-3

Infineon Technologies
834 -

RFQ

IPB65R065C7ATMA2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 650 V 33A (Tc) 10V 65mOhm @ 17.1A, 10V 4.5V @ 200µA 64 nC @ 10 V ±20V 3020 pF @ 400 V - 171W (Tc) -55°C ~ 150°C (TJ) Surface Mount
E3M0120090D

E3M0120090D

SICFET N-CH 900V 23A TO247-3

Wolfspeed, Inc.
411 -

RFQ

E3M0120090D

Ficha técnica

Tube E-Series, Automotive Obsolete N-Channel SiCFET (Silicon Carbide) 900 V 23A (Tc) 15V 155mOhm @ 15A, 15V 3.5V @ 3mA 17.3 nC @ 15 V +18V, -8V 350 pF @ 600 V - 97W (Tc) -55°C ~ 150°C (TJ) Through Hole
P3M12080K3

P3M12080K3

SICFET N-CH 1200V 47A TO-247-3

PN Junction Semiconductor
148 -

RFQ

P3M12080K3

Ficha técnica

Tube P3M Active N-Channel SiCFET (Silicon Carbide) 1200 V 47A 15V 96mOhm @ 20A, 15V 2.4V @ 5mA (Typ) - +21V, -8V - - 221W -55°C ~ 175°C (TJ) Through Hole
P3M12080K4

P3M12080K4

SICFET N-CH 1200V 47A TO-247-4

PN Junction Semiconductor
140 -

RFQ

P3M12080K4

Ficha técnica

Tube P3M Active N-Channel SiCFET (Silicon Carbide) 1200 V 47A 15V 96mOhm @ 20A, 15V 2.4V @ 5mA (Typ) - +21V, -8V - - 221W -55°C ~ 175°C (TJ) Through Hole
P3M06040K4

P3M06040K4

SICFET N-CH 650V 68A TO247-4

PN Junction Semiconductor
150 -

RFQ

P3M06040K4

Ficha técnica

Tube P3M Active N-Channel SiCFET (Silicon Carbide) 650 V 68A 15V 50mOhm @ 40A, 15V 2.4V @ 7.5mA (Typ) - +20V, -8V - - 254W -55°C ~ 175°C (TJ) Through Hole
IPB60R040CFD7ATMA1

IPB60R040CFD7ATMA1

MOSFET N-CH 650V 50A TO263-3-2

Infineon Technologies
713 -

RFQ

IPB60R040CFD7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 50A (Tc) 10V 40mOhm @ 24.9A, 10V 4.5V @ 1.25mA 108 nC @ 10 V ±20V 4351 pF @ 400 V - 227W (Tc) -55°C ~ 150°C (TJ) Surface Mount
UJ4C075044B7S

UJ4C075044B7S

750V/44MOHM, N-OFF SIC CASCODE

UnitedSiC
198 -

RFQ

UJ4C075044B7S

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel SiCFET (Silicon Carbide) 750 V 35.6A (Tc) 12V 56mOhm @ 25A, 12V 6V @ 10mA 37.8 nC @ 15 V ±20V 1400 pF @ 400 V - 181W (Tc) -55°C ~ 175°C (TJ)
IPDD60R045CFD7XTMA1

IPDD60R045CFD7XTMA1

MOSFET N-CH 600V 61A HDSOP-10

Infineon Technologies
1,332 -

RFQ

IPDD60R045CFD7XTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 600 V 61A (Tc) - 45mOhm @ 18A, 10V 4.5V @ 900µA 79 nC @ 10 V ±20V 3194 pF @ 400 V - 379W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NTE2973

NTE2973

MOSFET-N-CHAN ENHANCEMENT TO-3P

NTE Electronics, Inc
216 -

RFQ

NTE2973

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 900 V 14A (Tc) 10V 850mOhm @ 7A, 10V 4V @ 1mA - ±30V 2900 pF @ 25 V - 275W (Tc) -55°C ~ 150°C Through Hole
IRF830PBF-BE3

IRF830PBF-BE3

MOSFET N-CH 500V 4.5A TO220AB

Vishay Siliconix
2,732 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 4.5A (Tc) 10V 1.5Ohm @ 2.7A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 610 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP200N3LL

STP200N3LL

MOSFET N-CH 30V 120A TO220

STMicroelectronics
937 -

RFQ

STP200N3LL

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 30 V 120A (Tc) 4.5V, 10V 2.4mOhm @ 60A, 10V 2.5V @ 250µA 53 nC @ 4.5 V ±20V 5200 pF @ 25 V - 176.5W (Tc) -55°C ~ 175°C (TJ) Through Hole
STP160N3LL

STP160N3LL

MOSFET N-CH 30V 120A TO220

STMicroelectronics
717 -

RFQ

STP160N3LL

Ficha técnica

Tube STripFET™ H6 Active N-Channel MOSFET (Metal Oxide) 30 V 120A (Tc) 4.5V, 10V 3.2mOhm @ 60A, 10V 2.5V @ 250µA 42 nC @ 4.5 V ±20V 3500 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
CSD18504KCS

CSD18504KCS

MOSFET N-CH 40V 53A/100A TO220-3

Texas Instruments
143 -

RFQ

CSD18504KCS

Ficha técnica

Tube NexFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 53A (Ta), 100A (Tc) 4.5V, 10V 7mOhm @ 40A, 10V 2.3V @ 250µA 25 nC @ 10 V ±20V 1800 pF @ 20 V - 115W (Tc) -55°C ~ 150°C (TJ) Through Hole
GPI65030DFN

GPI65030DFN

GANFET N-CH 650V 30A DFN8X8

GaNPower
156 -

RFQ

GPI65030DFN

Ficha técnica

Tape & Reel (TR) - Active N-Channel GaNFET (Gallium Nitride) 650 V 30A 6V - 1.2V @ 3.5mA 5.8 nC @ 6 V +7.5V, -12V 241 pF @ 400 V - - -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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