Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
MT9M131C12STC-MI-DR

MT9M131C12STC-MI-DR

CMOS IMAGE SENSOR SYSTEM-ON-CHIP

onsemi
3,040 -

RFQ

MT9M131C12STC-MI-DR

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPB65R045C7ATMA2

IPB65R045C7ATMA2

MOSFET N-CH 650V 46A TO263-3

Infineon Technologies
473 -

RFQ

IPB65R045C7ATMA2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 650 V 46A (Tc) 10V 45mOhm @ 24.9A, 10V 4V @ 1.25mA 93 nC @ 10 V ±20V 4340 pF @ 400 V - 227W (Tc) -55°C ~ 150°C (TJ) Surface Mount
UJ4C075023B7S

UJ4C075023B7S

750V/23MOHM, N-OFF SIC CASCODE

UnitedSiC
200 -

RFQ

UJ4C075023B7S

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel SiCFET (Silicon Carbide) 750 V 64A (Tc) 12V 29mOhm @ 40A, 12V 6V @ 10mA 37.8 nC @ 15 V ±20V 1400 pF @ 400 V - 278W (Tc) -55°C ~ 175°C (TJ)
IV1Q12160T4

IV1Q12160T4

SIC MOSFET, 1200V 160MOHM, TO-24

Inventchip
111 -

RFQ

IV1Q12160T4

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 20A (Tc) 20V 195mOhm @ 10A, 20V 2.9V @ 1.9mA 43 nC @ 20 V +20V, -5V 885 pF @ 800 V - 138W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPT65R033G7XTMA1

IPT65R033G7XTMA1

MOSFET N-CH 650V 69A 8HSOF

Infineon Technologies
911 -

RFQ

IPT65R033G7XTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ C7 Obsolete N-Channel MOSFET (Metal Oxide) 650 V 69A (Tc) 10V 33mOhm @ 28.9A, 10V 4V @ 1.44mA 110 nC @ 10 V ±20V 5000 pF @ 400 V - 391W (Tc) -55°C ~ 150°C (TJ) Surface Mount
UJ4SC075018B7S

UJ4SC075018B7S

750V/18MOHM, N-OFF SIC STACK CAS

UnitedSiC
200 -

RFQ

UJ4SC075018B7S

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel SiCFET (Silicon Carbide) 750 V 72A (Tc) 12V 23mOhm @ 50A, 12V 6V @ 10mA 37.8 nC @ 15 V ±20V 1414 pF @ 400 V - 259W (Tc) -55°C ~ 175°C (TJ) Surface Mount
GPIHV30DFN

GPIHV30DFN

GANFET N-CH 1200V 30A DFN8X8

GaNPower
112 -

RFQ

GPIHV30DFN

Ficha técnica

Tape & Reel (TR) - Active N-Channel GaNFET (Gallium Nitride) 1200 V 30A 6V - 1.4V @ 3.5mA 8.25 nC @ 6 V +7.5V, -12V 236 pF @ 400 V - - -55°C ~ 150°C (TJ) Surface Mount
GPI65060DFN

GPI65060DFN

GANFET N-CH 650V 60A DFN8X8

GaNPower
120 -

RFQ

GPI65060DFN

Ficha técnica

Tape & Reel (TR) - Active N-Channel GaNFET (Gallium Nitride) 650 V 60A 6V - 1.2V @ 3.5mA 16 nC @ 6 V +7.5V, -12V 420 pF @ 400 V - - -55°C ~ 150°C (TJ) Surface Mount
UJ4SC075011B7S

UJ4SC075011B7S

750V/11MOHM, N-OFF SIC STACK CAS

UnitedSiC
197 -

RFQ

UJ4SC075011B7S

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel SiCFET (Silicon Carbide) 750 V 104A (Tc) 12V 14.2mOhm @ 60A, 12V 5.5V @ 10mA 75 nC @ 15 V ±20V 3245 pF @ 400 V - 357W (Tc) -55°C ~ 175°C (TJ) Surface Mount
LH7A400N0G000B5

LH7A400N0G000B5

LH7A400 - 32-BIT SYSTEM-ON-CHIP

Rochester Electronics, LLC
9,310 -

RFQ

LH7A400N0G000B5

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
AFT18HW355SR5

AFT18HW355SR5

RF N-CHANNEL POWER MOSFET

NXP USA Inc.
3,161 -

RFQ

AFT18HW355SR5

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
SCT3040KRC14

SCT3040KRC14

SICFET N-CH 1200V 55A TO247-4L

Rohm Semiconductor
212 -

RFQ

SCT3040KRC14

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 55A (Tc) 18V 52mOhm @ 20A, 18V 5.6V @ 10mA 107 nC @ 18 V +22V, -4V 1337 pF @ 800 V - 262W 175°C (TJ) Through Hole
SCT3040KLHRC11

SCT3040KLHRC11

SICFET N-CH 1200V 55A TO247N

Rohm Semiconductor
206 -

RFQ

SCT3040KLHRC11

Ficha técnica

Tube Automotive, AEC-Q101 Active N-Channel SiCFET (Silicon Carbide) 1200 V 55A (Ta) 18V 52mOhm @ 20A, 18V 5.6V @ 10mA 107 nC @ 18 V +22V, -4V 1337 pF @ 800 V - 262W 175°C (TJ) Through Hole
SCT3030KLGC11

SCT3030KLGC11

SICFET N-CH 1200V 72A TO247N

Rohm Semiconductor
161 -

RFQ

SCT3030KLGC11

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 72A (Tc) 18V 39mOhm @ 27A, 18V 5.6V @ 13.3mA 131 nC @ 18 V +22V, -4V 2222 pF @ 800 V - 339W (Tc) 175°C (TJ) Through Hole
IRLML2402TRPBF

IRLML2402TRPBF

MOSFET N-CH 20V 1.2A SOT23

Infineon Technologies
1,781 -

RFQ

IRLML2402TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 20 V 1.2A (Ta) 2.7V, 4.5V 250mOhm @ 930mA, 4.5V 700mV @ 250µA (Min) 3.9 nC @ 4.5 V ±12V 110 pF @ 15 V - 540mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BUK98150-55A/CUF

BUK98150-55A/CUF

MOSFET N-CH 55V 5.5A SOT223

Nexperia USA Inc.
250 -

RFQ

BUK98150-55A/CUF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 5.5A (Tc) 4.5V, 10V 137mOhm @ 5A, 10V 2V @ 1mA 5.3 nC @ 5 V ±15V 320 pF @ 25 V - 8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NTF6P02T3G

NTF6P02T3G

MOSFET P-CH 20V 10A SOT223

onsemi
15,134 -

RFQ

NTF6P02T3G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 10A (Ta) 2.5V, 4.5V 50mOhm @ 6A, 4.5V 1V @ 250µA 20 nC @ 4.5 V ±8V 1200 pF @ 16 V - 8.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
APT10M07JVFR

APT10M07JVFR

MOSFET N-CH 100V 225A ISOTOP

Microchip Technology
2,745 -

RFQ

APT10M07JVFR

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 100 V 225A (Tc) - 7mOhm @ 500mA, 10V 4V @ 5mA 1050 nC @ 10 V - 21600 pF @ 25 V - - - Chassis Mount
IXTN62N50L

IXTN62N50L

MOSFET N-CH 500V 62A SOT227B

IXYS
3,691 -

RFQ

IXTN62N50L

Ficha técnica

Tube Linear Active N-Channel MOSFET (Metal Oxide) 500 V 62A (Tc) 20V 100mOhm @ 500mA, 20V 5V @ 250µA 550 nC @ 20 V ±30V 11500 pF @ 25 V - 800W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT10026L2LLG

APT10026L2LLG

MOSFET N-CH 1000V 38A 264 MAX

Microchip Technology
2,221 -

RFQ

APT10026L2LLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1000 V 38A (Tc) - 260mOhm @ 19A, 10V 5V @ 5mA 267 nC @ 10 V - 7114 pF @ 25 V - - - Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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