Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
PSMN6R5-25YLC/GFX

PSMN6R5-25YLC/GFX

PSMN6R5-25YLC/GFX

NXP USA Inc.
2,868 -

RFQ

Bulk * Obsolete - - - - - - - - - - - - - -
CPM2-1200-0080B

CPM2-1200-0080B

MOSFET NCH 1200V 36A DIE

Wolfspeed, Inc.
3,000 -

RFQ

CPM2-1200-0080B

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
CPM2-1200-0160B

CPM2-1200-0160B

MOSFET NCH 1200V 36A DIE

Wolfspeed, Inc.
2,393 -

RFQ

CPM2-1200-0160B

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
CPMF-1200-S080B

CPMF-1200-S080B

SICFET N-CH 1200V 50A DIE

Wolfspeed, Inc.
2,965 -

RFQ

CPMF-1200-S080B

Ficha técnica

Bulk Z-FET™ Obsolete N-Channel SiCFET (Silicon Carbide) 1200 V 50A (Tj) 20V 110mOhm @ 20A, 20V 4V @ 1mA 90.8 nC @ 20 V +25V, -5V 1915 pF @ 800 V - 313mW (Tj) -55°C ~ 150°C (TJ) Surface Mount
CPMF-1200-S160B

CPMF-1200-S160B

SICFET N-CH 1200V 28A DIE

Wolfspeed, Inc.
3,649 -

RFQ

CPMF-1200-S160B

Ficha técnica

Bulk Z-FET™ Obsolete N-Channel SiCFET (Silicon Carbide) 1200 V 28A (Tj) 20V 220mOhm @ 10A, 20V 4V @ 1mA 47.1 nC @ 20 V +25V, -5V 928 pF @ 800 V - 202W (Tj) -55°C ~ 150°C (TJ) Surface Mount
C2M0080170P

C2M0080170P

SICFET N-CH 1700V 40A TO247-4

Wolfspeed, Inc.
3,349 -

RFQ

C2M0080170P

Ficha técnica

Tube C2M™ Obsolete N-Channel SiCFET (Silicon Carbide) 1700 V 40A (Tc) 20V 125mOhm @ 28A, 20V 4V @ 10mA 120 nC @ 20 V +25V, -10V 2250 pF @ 1000 V - 277W (Tc) -55°C ~ 150°C (TJ) Through Hole
E3M0065090D

E3M0065090D

SICFET N-CH 900V 35A TO247-3

Wolfspeed, Inc.
3,796 -

RFQ

E3M0065090D

Ficha técnica

Tube E-Series, Automotive Obsolete N-Channel SiCFET (Silicon Carbide) 900 V 35A (Tc) 15V 84.5mOhm @ 20A, 15V 3.5V @ 5mA 30.4 nC @ 15 V +18V, -8V 660 pF @ 600 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP3306PBF

IRFP3306PBF

IRFP3306 - 12V-300V N-CHANNEL PO

International Rectifier
2,933 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 4.2mOhm @ 75A, 10V 4V @ 150µA 120 nC @ 10 V ±20V 4520 pF @ 50 V - 220W (Tc) -55°C ~ 175°C (TJ) Through Hole
PSMN2R0-30PL,127

PSMN2R0-30PL,127

NOW NEXPERIA PSMN2R0-30PL - 100A

NXP Semiconductors
3,280 -

RFQ

PSMN2R0-30PL,127

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 4.5V, 10V 2.1mOhm @ 15A, 10V 2.15V @ 1mA 117 nC @ 10 V ±20V 6810 pF @ 12 V - 211W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDP032N08B-F102

FDP032N08B-F102

MOSFET N-CH 80V 120A TO220-3

Fairchild Semiconductor
3,599 -

RFQ

FDP032N08B-F102

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 10V 3.3mOhm @ 100A, 10V 4.5V @ 250µA 144 nC @ 10 V ±20V 10965 pF @ 40 V - 263W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB4332PBF

IRFB4332PBF

IRFB4332 - 12V-300V N-CHANNEL PO

International Rectifier
2,154 -

RFQ

IRFB4332PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 250 V 60A (Tc) 10V 33mOhm @ 35A, 10V 5V @ 250µA 150 nC @ 10 V ±30V 5860 pF @ 25 V - 390W (Tc) -40°C ~ 175°C (TJ) Through Hole
BUK7Y65-100EX

BUK7Y65-100EX

TRANSISTOR >30MHZ

NXP Semiconductors
3,974 -

RFQ

BUK7Y65-100EX

Ficha técnica

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 19A (Tc) 10V 65mOhm @ 5A, 10V 4V @ 1mA 17.8 nC @ 10 V ±20V 1023 pF @ 25 V - 64W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PSMN9R1-30YL,115

PSMN9R1-30YL,115

NOW NEXPERIA PSMN9R1-30YL - 57A

NXP Semiconductors
3,409 -

RFQ

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 57A (Tc) 4.5V, 10V 9.1mOhm @ 15A, 10V 2.15V @ 1mA 16.7 nC @ 10 V ±20V 894 pF @ 15 V - 52W (Tc) -55°C ~ 175°C (TJ)
FDS6375

FDS6375

SMALL SIGNAL FIELD-EFFECT TRANSI

National Semiconductor
3,124 -

RFQ

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 8A (Ta) 2.5V, 4.5V 24mOhm @ 8A, 4.5V 1.5V @ 250µA 36 nC @ 4.5 V ±8V 2694 pF @ 10 V - 2.5W (Ta) -55°C ~ 175°C (TJ) Surface Mount
FDP047N08-F102

FDP047N08-F102

MOSFET N-CH 75V 164A TO220-3

Fairchild Semiconductor
3,390 -

RFQ

FDP047N08-F102

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 75 V 164A (Tc) 10V 4.7Ohm @ 80A, 10V 4.5V @ 250µA 152 nC @ 10 V ±20V 9415 pF @ 25 V - 268W (Tc) -55°C ~ 175°C (TJ) Through Hole
PMCM4401UNEZ

PMCM4401UNEZ

PMCM4401UNE - 20V, N-CHANNEL TRE

NXP Semiconductors
3,580 -

RFQ

PMCM4401UNEZ

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 20 V - 2.5V, 4.5V - - 6.2 nC @ 4.5 V - - - 400mW 150°C (TJ) Surface Mount
PSMN6R1-25MLD115

PSMN6R1-25MLD115

NOW NEXPERIA PSMN6R1-25MLD - POW

Nexperia USA Inc.
3,729 -

RFQ

PSMN6R1-25MLD115

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRF640NSTRLPBF

IRF640NSTRLPBF

HEXFET POWER MOSFET

International Rectifier
3,904 -

RFQ

IRF640NSTRLPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 150mOhm @ 11A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 1160 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFP4468PBF

IRFP4468PBF

IRFP4468 - 12V-300V N-CHANNEL PO

International Rectifier
2,333 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 195A (Tc) 10V 2.6mOhm @ 180A, 10V 4V @ 250µA 540 nC @ 10 V ±20V 19860 pF @ 50 V - 520W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLR9343TRPBF

IRLR9343TRPBF

IRLR9343 - 20V-250V P-CHANNEL PO

International Rectifier
3,952 -

RFQ

Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 55 V 20A (Tc) 4.5V, 10V 105mOhm @ 3.4A, 10V 1V @ 250µA 47 nC @ 10 V ±20V 660 pF @ 50 V - 79W (Tc) -40°C ~ 175°C (TJ) Surface Mount
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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