Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
APTM50UM09FAG

APTM50UM09FAG

MOSFET N-CH 500V 497A SP6

Microchip Technology
3,913 -

RFQ

APTM50UM09FAG

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 497A (Tc) 10V 10mOhm @ 248.5A, 10V 5V @ 30mA 1200 nC @ 10 V ±30V 63300 pF @ 25 V - 5000W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTM100UM65SCAVG

APTM100UM65SCAVG

MOSFET N-CH 1000V 145A SP6

Microchip Technology
3,523 -

RFQ

APTM100UM65SCAVG

Ficha técnica

Bulk POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1000 V 145A (Tc) 10V 78mOhm @ 72.5A, 10V 5V @ 20mA 1068 nC @ 10 V ±30V 28500 pF @ 25 V - 3250W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTM100UM45FAG

APTM100UM45FAG

MOSFET N-CH 1000V 215A SP6

Microchip Technology
3,873 -

RFQ

APTM100UM45FAG

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 1000 V 215A (Tc) 10V 52mOhm @ 107.5A, 10V 5V @ 30mA 1602 nC @ 10 V ±30V 42700 pF @ 25 V - 5000W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTM120UM70FAG

APTM120UM70FAG

MOSFET N-CH 1200V 171A SP6

Microchip Technology
2,795 -

RFQ

APTM120UM70FAG

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 1200 V 171A (Tc) 10V 80mOhm @ 85.5A, 10V 5V @ 30mA 1650 nC @ 10 V ±30V 43500 pF @ 25 V - 5000W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
GA50JT06-258

GA50JT06-258

TRANS SJT 600V 100A TO258

GeneSiC Semiconductor
2,358 -

RFQ

GA50JT06-258

Ficha técnica

Bulk - Active - SiC (Silicon Carbide Junction Transistor) 600 V 100A (Tc) - 25mOhm @ 50A - - - - - 769W (Tc) -55°C ~ 225°C (TJ) Through Hole
BSS123

BSS123

N-CHANNEL ENHANCEMENT MODE MOSFE

ANBON SEMICONDUCTOR (INT'L) LIMITED
3,404 -

RFQ

BSS123

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) * Active - - - - - - - - - - - - - -
YJL3134K

YJL3134K

N-CH MOSFET 20V 0.9A SOT-23-3L

Yangzhou Yangjie Electronic Technology Co.,Ltd
3,946 -

RFQ

YJL3134K

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 900mA (Ta) 1.8V, 4.5V 260mOhm @ 500mA, 4.5V 1.1V @ 250µA 1 nC @ 4.5 V ±12V 56 pF @ 10 V - 350mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
YJL2312A

YJL2312A

N-CH MOSFET 20V 6.8A SOT-23-3L

Yangzhou Yangjie Electronic Technology Co.,Ltd
3,519 -

RFQ

YJL2312A

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 6.8A (Ta) 1.8V, 4.5V 18mOhm @ 6.8A, 4.5V 1V @ 250µA 11.05 nC @ 4.5 V ±10V 888 pF @ 10 V - 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
YJL2101W

YJL2101W

P-CH MOSFET 20V 2A SOT-323

Yangzhou Yangjie Electronic Technology Co.,Ltd
3,755 -

RFQ

YJL2101W

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 2A (Ta) 1.8V, 4.5V 130mOhm @ 1.5A, 4.5V 1V @ 250µA 4.5 nC @ 4.5 V ±10V 327 pF @ 10 V - 250mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS123

BSS123

N-CH MOSFET 100V 0.2A SOT-23-3L

Yangzhou Yangjie Electronic Technology Co.,Ltd
2,220 -

RFQ

BSS123

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 200mA (Ta) 4.5V, 10V 5Ohm @ 200mA, 10V 3V @ 250µA 2.5 nC @ 10 V ±20V 14 pF @ 50 V - 350mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
YJL2304A

YJL2304A

N-CH MOSFET 30V 3.6A SOT-23-3L

Yangzhou Yangjie Electronic Technology Co.,Ltd
3,833 -

RFQ

YJL2304A

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 3.6A (Ta) 4.5V, 10V 39mOhm @ 3.6A, 10V 2.5V @ 250µA 4.2 nC @ 10 V ±20V 520 pF @ 15 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
YJL2302B

YJL2302B

N-CH MOSFET 20V 3A SOT-23-3L

Yangzhou Yangjie Electronic Technology Co.,Ltd
2,504 -

RFQ

YJL2302B

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 3A (Ta) 2.5V, 4.5V 52mOhm @ 3A, 4.5V 1.1V @ 250µA 2.9 nC @ 4.5 V ±10V 280 pF @ 10 V - 700mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
2N7002KW

2N7002KW

N-CH MOSFET 60V 0.34A SOT-323

Yangzhou Yangjie Electronic Technology Co.,Ltd
3,024 -

RFQ

2N7002KW

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 340mA (Ta) 4.5V, 10V 2.5Ohm @ 300mA, 10V 2.5V @ 250µA 2.4 nC @ 10 V ±20V 30 pF @ 30 V - 350mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
2N7002A

2N7002A

N-CH MOSFET 60V 0.34A SOT-23-3L

Yangzhou Yangjie Electronic Technology Co.,Ltd
3,607 -

RFQ

2N7002A

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 340mA (Ta) 4.5V, 10V 2.5Ohm @ 300mA, 10V 2.5V @ 250µA 1.6 nC @ 10 V ±30V 27.5 pF @ 30 V - 350mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
AS2312

AS2312

N-CHANNEL ENHANCEMENT MODE MOSFE

ANBON SEMICONDUCTOR (INT'L) LIMITED
2,962 -

RFQ

AS2312

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) * Active - - - - - - - - - - - - - -
AS3400

AS3400

N-CHANNEL ENHANCEMENT MODE MOSFE

ANBON SEMICONDUCTOR (INT'L) LIMITED
3,988 -

RFQ

AS3400

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) * Active - - - - - - - - - - - - - -
YJL03N06B

YJL03N06B

N-CH MOSFET 60V 3A SOT-23-3L

Yangzhou Yangjie Electronic Technology Co.,Ltd
3,057 -

RFQ

YJL03N06B

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 3A (Ta) 2.5V, 10V 100mOhm @ 3A, 10V 1.55V @ 250µA 13.8 nC @ 10 V ±16V 451 pF @ 30 V - 1.2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
YJL02N10A

YJL02N10A

N-CH MOSFET 100V 2A SOT-23-3L

Yangzhou Yangjie Electronic Technology Co.,Ltd
3,319 -

RFQ

YJL02N10A

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 2A (Ta) 4.5V, 10V 280mOhm @ 2A, 10V 3V @ 250µA 9.56 nC @ 10 V ±20V 387 pF @ 10 V - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
G2305

G2305

P20V,RD(MAX)<[email protected],RD(MAX)<7

Goford Semiconductor
3,423 -

RFQ

G2305

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 4.8A (Ta) 2.5V, 4.5V 50mOhm @ 4.1A, 4.5V 1V @ 250µA 7.8 nC @ 4.5 V ±12V - - 1.7W (Ta) -55°C ~ 150°C (TJ) Surface Mount
G2304

G2304

MOSFET N-CH 30V 3.6A SOT-23

Goford Semiconductor
3,160 -

RFQ

G2304

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 3.6A (Ta) 4.5V, 10V 58mOhm @ 3.6A, 10V 2.2V @ 250µA 4 nC @ 10 V ±20V 230 pF @ 15 V Standard 1.7W (Ta) -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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