Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
YJL2300A

YJL2300A

N-CH MOSFET 20V 4.5A SOT-23-3L

Yangzhou Yangjie Electronic Technology Co.,Ltd
3,531 -

RFQ

YJL2300A

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 4.5A (Ta) 1.8V, 4.5V 25mOhm @ 4.5A, 4.5V 1V @ 250µA 7.1 nC @ 4.5 V ±10V 620 pF @ 10 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
YJL2305A

YJL2305A

P-CH MOSFET 15V 5.6A SOT-23-3L

Yangzhou Yangjie Electronic Technology Co.,Ltd
2,175 -

RFQ

YJL2305A

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 15 V 5.6A (Ta) 1.8V, 4.5V 36.4mOhm @ 5.6A, 4.5V 1V @ 250µA 7.2 nC @ 4.5 V ±10V 890 pF @ 9 V - 1.2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
YJL2302A

YJL2302A

N-CH MOSFET 20V 4.3A SOT-23-3L

Yangzhou Yangjie Electronic Technology Co.,Ltd
2,282 -

RFQ

YJL2302A

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 4.3A (Ta) 2.5V, 4.5V 27mOhm @ 4.3A, 4.5V 1.25V @ 250µA 6.5 nC @ 4.5 V ±10V 602 pF @ 20 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
YJL05N04A

YJL05N04A

N-CH MOSFET 40V 5A SOT-23-3L

Yangzhou Yangjie Electronic Technology Co.,Ltd
2,886 -

RFQ

YJL05N04A

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 5A (Ta) 4.5V, 10V 45mOhm @ 5A, 10V 2.5V @ 250µA 9.76 nC @ 10 V ±20V 417 pF @ 10 V - 1.2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
YJL3134KW

YJL3134KW

N-CH MOSFET 20V 0.75A SOT-323

Yangzhou Yangjie Electronic Technology Co.,Ltd
3,585 -

RFQ

YJL3134KW

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 750mA (Ta) 1.8V, 4.5V 260mOhm @ 500mA, 4.5V 1.1V @ 250µA 1 nC @ 4.5 V ±12V 56 pF @ 10 V - 200mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
AS2324

AS2324

N-CHANNEL ENHANCEMENT MODE MOSFE

ANBON SEMICONDUCTOR (INT'L) LIMITED
3,267 -

RFQ

AS2324

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) * Active - - - - - - - - - - - - - -
AS3401

AS3401

P-CHANNEL ENHANCEMENT MODE MOSFE

ANBON SEMICONDUCTOR (INT'L) LIMITED
3,577 -

RFQ

AS3401

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) * Active - - - - - - - - - - - - - -
BSS138L

BSS138L

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,088 -

RFQ

BSS138L

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 50 V 200mA (Ta) 2.75V, 5V 3.5Ohm @ 200mA, 5V 1.5V @ 1mA 2.4 nC @ 10 V ±20V 50 pF @ 25 V - 350mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
YJL3401A

YJL3401A

P-CH MOSFET 30V 4.4A SOT-23-3L

Yangzhou Yangjie Electronic Technology Co.,Ltd
3,705 -

RFQ

YJL3401A

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 4.4A (Ta) 2.5V, 10V 55mOhm @ 4.4A, 10V 1.4V @ 250µA 22 nC @ 10 V ±12V 1040 pF @ 15 V - 1.2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
YJL3404A

YJL3404A

N-CH MOSFET 30V 5.6A SOT-23-3L

Yangzhou Yangjie Electronic Technology Co.,Ltd
2,263 -

RFQ

YJL3404A

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 5.6A (Ta) 4.5V, 10V 24mOhm @ 5.6A,, 10V 2.2V @ 250µA 12.22 nC @ 10 V ±20V 526 pF @ 15 V - 1.2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
YJL3407A

YJL3407A

P-CH MOSFET 30V 4.1A SOT-23-3L

Yangzhou Yangjie Electronic Technology Co.,Ltd
3,899 -

RFQ

YJL3407A

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 4.1A (Ta) 4.5V, 10V 49mOhm @ 4.1A, 10V 2.4V @ 250µA 11.65 nC @ 10 V ±20V 572 pF @ 15 V - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS138

BSS138

N-CH MOSFET 50V 0.34A SOT-23-3L

Yangzhou Yangjie Electronic Technology Co.,Ltd
2,201 -

RFQ

BSS138

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 50 V 340mA (Ta) 4.5V, 10V 2.5Ohm @ 300mA, 10V 1.6V @ 250µA 1.7 nC @ 10 V ±20V 28.5 pF @ 25 V - 350mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
2301H

2301H

P30V,RD(MAX)<[email protected],RD(MAX)<

Goford Semiconductor
2,217 -

RFQ

2301H

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 2A (Ta) 4.5V, 10V 125mOhm @ 3A, 10V 2V @ 250µA 12 nC @ 2.5 V ±12V 405 pF @ 10 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
YJQ4666B

YJQ4666B

P-CH MOSFET 16V 7A DFN2020-6L-C-

Yangzhou Yangjie Electronic Technology Co.,Ltd
2,479 -

RFQ

YJQ4666B

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 7A (Tc) 1.8V, 4.5V 36.5mOhm @ 7A, 4.5V 1V @ 250µA 40.1 nC @ 4.5 V ±10V 852 pF @ 10 V - 2.2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
YJL03G10A

YJL03G10A

N-CH MOSFET 100V 3A SOT-23-3L

Yangzhou Yangjie Electronic Technology Co.,Ltd
3,745 -

RFQ

YJL03G10A

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 3A (Ta) 4.5V, 10V 140mOhm @ 3A, 10V 3V @ 250µA 4.3 nC @ 10 V ±20V 206 pF @ 50 V - 1.2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
3415A

3415A

P20V,RD(MAX)<[email protected],RD(MAX)<6

Goford Semiconductor
2,555 -

RFQ

3415A

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 4A (Ta) 2.5V, 4.5V 45mOhm @ 4A, 4.5V 900mV @ 250µA 12 nC @ 4.5 V ±10V 950 pF @ 10 V - 1.4W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSD214SNH6327

BSD214SNH6327

BSD314 - 250V-600V SMALL SIGNAL/

Infineon Technologies
3,290 -

RFQ

BSD214SNH6327

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
G3035L

G3035L

P30V,RD(MAX)<59M@-10V,RD(MAX)<75

Goford Semiconductor
3,077 -

RFQ

G3035L

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 4.1A (Ta) 4.5V, 10V 59mOhm @ 2.1A, 10V 2V @ 250µA 12.5 nC @ 10 V ±20V 650 pF @ 15 V - 1.4W (Ta) -55°C ~ 150°C (TJ) Surface Mount
G7P03L

G7P03L

P30V,RD(MAX)<23M@-10V,RD(MAX)<34

Goford Semiconductor
3,212 -

RFQ

G7P03L

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 7A (Tc) 4.5V, 10V 23mOhm @ 3A, 10V 2.5V @ 250µA 29 nC @ 10 V ±20V 1500 pF @ 15 V - 1.9W (Tc) -55°C ~ 150°C (TJ) Surface Mount
YJQ30N03A

YJQ30N03A

N-CH MOSFET 30V 30A DFN3333-8L

Yangzhou Yangjie Electronic Technology Co.,Ltd
2,193 -

RFQ

YJQ30N03A

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active - - - - - - - - - - - - - Surface Mount
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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