Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
VP0109N3-G

VP0109N3-G

MOSFET P-CH 90V 250MA TO92-3

Microchip Technology
2,116 -

RFQ

VP0109N3-G

Ficha técnica

Bag - Active P-Channel MOSFET (Metal Oxide) 90 V 250mA (Tj) 5V, 10V 8Ohm @ 500mA, 10V 3.5V @ 1mA - ±20V 60 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF520PBF-BE3

IRF520PBF-BE3

MOSFET N-CH 100V 9.2A TO220AB

Vishay Siliconix
362 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 9.2A (Tc) 10V 270mOhm @ 5.5A, 10V 4V @ 250µA 16 nC @ 10 V ±20V 360 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF620PBF-BE3

IRF620PBF-BE3

MOSFET N-CH 200V 5.2A TO220AB

Vishay Siliconix
178 -

RFQ

IRF620PBF-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 5.2A (Tc) - 800mOhm @ 3.1A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLB8748PBF

IRLB8748PBF

MOSFET N-CH 30V 92A TO220AB

Infineon Technologies
425 -

RFQ

IRLB8748PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 92A (Tc) 4.5V, 10V 4.8mOhm @ 40A, 10V 2.35V @ 50µA 23 nC @ 4.5 V ±20V 2139 pF @ 15 V - 75W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF200B211

IRF200B211

MOSFET N-CH 200V 12A TO220AB

Infineon Technologies
443 -

RFQ

IRF200B211

Ficha técnica

Tube HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 200 V 12A (Tc) 10V 170mOhm @ 7.2A, 10V 4.9V @ 50µA 23 nC @ 10 V ±20V 790 pF @ 50 V - 80W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQP13N10L

FQP13N10L

MOSFET N-CH 100V 12.8A TO220-3

onsemi
761 -

RFQ

FQP13N10L

Ficha técnica

Tube QFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 100 V 12.8A (Tc) 5V, 10V 180mOhm @ 6.4A, 10V 2V @ 250µA 12 nC @ 5 V ±20V 520 pF @ 25 V - 65W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF720PBF

IRF720PBF

MOSFET N-CH 400V 3.3A TO220AB

Vishay Siliconix
196 -

RFQ

IRF720PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 3.3A (Tc) 10V 1.8Ohm @ 2A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 410 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
BUZ11-NR4941

BUZ11-NR4941

MOSFET N-CH 50V 30A TO220-3

onsemi
754 -

RFQ

BUZ11-NR4941

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 50 V 30A (Tc) 10V 40mOhm @ 15A, 10V 4V @ 1mA - ±20V 2000 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP055N03LGXKSA1

IPP055N03LGXKSA1

MOSFET N-CH 30V 50A TO220-3

Infineon Technologies
629 -

RFQ

IPP055N03LGXKSA1

Ficha técnica

Tube OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 5.5mOhm @ 30A, 10V 2.2V @ 250µA 31 nC @ 10 V ±20V 3200 pF @ 15 V - 68W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQPF2N60C

FQPF2N60C

MOSFET N-CH 600V 2A TO220F

onsemi
169 -

RFQ

FQPF2N60C

Ficha técnica

Tube QFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 600 V 2A (Tc) 10V 4.7Ohm @ 1A, 10V 4V @ 250µA 12 nC @ 10 V ±30V 235 pF @ 25 V - 23W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF11P06

FQPF11P06

MOSFET P-CH 60V 8.6A TO220F

onsemi
379 -

RFQ

FQPF11P06

Ficha técnica

Tube QFET® Last Time Buy P-Channel MOSFET (Metal Oxide) 60 V 8.6A (Tc) 10V 175mOhm @ 4.3A, 10V 4V @ 250µA 17 nC @ 10 V ±25V 550 pF @ 25 V - 30W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQP6N40C

FQP6N40C

MOSFET N-CH 400V 6A TO220-3

onsemi
428 -

RFQ

FQP6N40C

Ficha técnica

Tube QFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 400 V 6A (Tc) 10V 1Ohm @ 3A, 10V 4V @ 250µA 20 nC @ 10 V ±30V 625 pF @ 25 V - 73W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP7N60M2

STP7N60M2

MOSFET N-CH 600V 5A TO220

STMicroelectronics
562 -

RFQ

STP7N60M2

Ficha técnica

Tube MDmesh™ II Plus Active N-Channel MOSFET (Metal Oxide) 600 V 5A (Tc) 10V 950mOhm @ 2.5A, 10V 4V @ 250µA 8.8 nC @ 10 V ±25V 271 pF @ 100 V - 60W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF630PBF

IRF630PBF

MOSFET N-CH 200V 9A TO220AB

Vishay Siliconix
6,238 -

RFQ

IRF630PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 9A (Tc) 10V 400mOhm @ 5.4A, 10V 4V @ 250µA 43 nC @ 10 V ±20V 800 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU9014PBF

IRFU9014PBF

MOSFET P-CH 60V 5.1A TO251AA

Vishay Siliconix
2,675 -

RFQ

IRFU9014PBF

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 60 V 5.1A (Tc) 10V 500mOhm @ 3.1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
APTM20UM03FAG

APTM20UM03FAG

MOSFET N-CH 200V 580A SP6

Microchip Technology
2,267 -

RFQ

APTM20UM03FAG

Ficha técnica

Bulk POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 200 V 580A (Tc) 10V 3.6mOhm @ 290A, 10V 5V @ 15mA 840 nC @ 10 V ±30V 43300 pF @ 25 V - 2270W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTM10UM01FAG

APTM10UM01FAG

MOSFET N-CH 100V 860A SP6

Microchip Technology
2,074 -

RFQ

APTM10UM01FAG

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 860A (Tc) 10V 1.6mOhm @ 275A, 10V 4V @ 12mA 2100 nC @ 10 V ±30V 60000 pF @ 25 V - 2500W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTM100UM60FAG

APTM100UM60FAG

MOSFET N-CH 1000V 129A SP6

Microchip Technology
3,566 -

RFQ

APTM100UM60FAG

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 1000 V 129A (Tc) 10V 70mOhm @ 64.5A, 10V 5V @ 15mA 1116 nC @ 10 V ±30V 31100 pF @ 25 V - 2272W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTM120UM70DAG

APTM120UM70DAG

MOSFET N-CH 1200V 171A SP6

Microchip Technology
3,609 -

RFQ

APTM120UM70DAG

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 1200 V 171A (Tc) 10V 80mOhm @ 85.5A, 10V 5V @ 30mA 1650 nC @ 10 V ±30V 43500 pF @ 25 V - 5000W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTM120U10SCAVG

APTM120U10SCAVG

MOSFET N-CH 1200V 116A SP6

Microchip Technology
3,348 -

RFQ

APTM120U10SCAVG

Ficha técnica

Bulk POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1200 V 116A (Tc) 10V 120mOhm @ 58A, 10V 5V @ 20mA 1100 nC @ 10 V ±30V 28900 pF @ 25 V - 3290W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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