Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
G400P06S

G400P06S

MOSFET, P-CH, 60V,6A,SOP-8

Goford Semiconductor
3,418 -

RFQ

Tape & Reel (TR),Cut Tape (CT) * Active - - - - - - - - - - - - - -
PH1225AL,115

PH1225AL,115

MOSFET N-CH 25V 100A LFPAK56

NXP USA Inc.
3,816 -

RFQ

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 25 V 100A (Tc) - 1.2mOhm @ 15A, 10V 2.15V @ 1mA 105 nC @ 10 V - 6380 pF @ 12 V - - - Surface Mount
BUK7Y10-30B,115

BUK7Y10-30B,115

MOSFET N-CH 30V 67A LFPAK56

NXP USA Inc.
2,825 -

RFQ

BUK7Y10-30B,115

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 67A (Tc) 10V 10mOhm @ 25A, 10V 4V @ 1mA 18.8 nC @ 10 V ±20V 1183 pF @ 25 V - 85W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK6218-40C,118

BUK6218-40C,118

NEXPERIA BUK6218 - N-CHANNEL TRE

NXP Semiconductors
2,675 -

RFQ

BUK6218-40C,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 42A (Tc) 10V 16mOhm @ 10A, 10V 2.8V @ 1mA 22 nC @ 10 V ±16V 1170 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PHD20N06T,118

PHD20N06T,118

MOSFET N-CH 55V 18A DPAK

NXP USA Inc.
2,902 -

RFQ

PHD20N06T,118

Ficha técnica

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 18A (Tc) 10V 77mOhm @ 10A, 10V 4V @ 1mA 11 nC @ 10 V ±20V 422 pF @ 25 V - 51W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC0906NS

BSC0906NS

BSC0906 - 12V-300V N-CHANNEL POW

Infineon Technologies
2,486 -

RFQ

BSC0906NS

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
UMW FDN335N

UMW FDN335N

SOT-23 MOSFETS ROHS

UTD Semiconductor
3,724 -

RFQ

UMW FDN335N

Ficha técnica

Tape & Reel (TR) UMW Active P-Channel MOSFET (Metal Oxide) 20 V 1.7A (Ta) 2.5V, 4.5V 70mOhm @ 1.7A, 4.5V 1.5V @ 250µA 3.5 nC @ 4.5 V ±8V 310 pF @ 10 V - 1W (Ta) 150°C (TJ) Surface Mount
IPN65R1K5CE

IPN65R1K5CE

SMALL SIGNAL FIELD-EFFECT TRANSI

Infineon Technologies
3,162 -

RFQ

IPN65R1K5CE

Ficha técnica

Bulk CoolMOS™ CE Active N-Channel MOSFET (Metal Oxide) 650 V 5.2A (Tc) 10V 1.5Ohm @ 1A, 10V 3.5V @ 100µA 10.5 nC @ 10 V ±20V 225 pF @ 100 V - 5W (Tc) -40°C ~ 150°C (TJ) Surface Mount
G20P06K

G20P06K

P-60V, -20A,RD<45M@-10V,VTH-2V~-

Goford Semiconductor
2,500 -

RFQ

G20P06K

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 60 V 20A (Tc) 10V 45mOhm @ 12A, 10V 3.5V @ 250µA 46 nC @ 10 V ±20V 3430 pF @ 30 V - 90W (Tc) -55°C ~ 150°C (TJ) Surface Mount
YJG53G06A

YJG53G06A

N-CH MOSFET 60V 53A PDFN5060-8L-

Yangzhou Yangjie Electronic Technology Co.,Ltd
2,638 -

RFQ

YJG53G06A

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 53A (Tc) 4.5V, 10V 8.2mOhm @ 20A, 10V 2.5V @ 250µA 31 nC @ 10 V ±20V 1525 pF @ 35 V - 65W (Tc) -55°C ~ 150°C (TJ) Surface Mount
YJD45G10A

YJD45G10A

N-CH MOSFET 100V 45A TO-252

Yangzhou Yangjie Electronic Technology Co.,Ltd
3,702 -

RFQ

YJD45G10A

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 45A (Tc) 4.5V, 10V 17mOhm @ 20A, 10V 3V @ 250µA 16 nC @ 10 V ±20V 1135 pF @ 50 V - 72W (Tc) -55°C ~ 150°C (TJ) Surface Mount
YJQ40G10A

YJQ40G10A

N-CH MOSFET 100V 40A DFN3333-8L-

Yangzhou Yangjie Electronic Technology Co.,Ltd
2,596 -

RFQ

YJQ40G10A

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 40A (Tc) 4.5V, 10V 18.5mOhm @ 20A, 10V 2.5V @ 250µA 16 nC @ 10 V ±20V 1051 pF @ 50 V - 43W (Tc) -55°C ~ 150°C (TJ) Surface Mount
G18P03D3

G18P03D3

P30V,RD(MAX)<10M@-10V,RD(MAX)<15

Goford Semiconductor
3,876 -

RFQ

G18P03D3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 28A (Tc) 4.5V, 10V 10mOhm @ 10A, 10V 2.5V @ 250µA 30 nC @ 10 V ±20V 2060 pF @ 15 V - 40W (Tc) -55°C ~ 150°C (TJ) Surface Mount
MMBT7002K

MMBT7002K

MOSFET, SOT-23, 60V, 0.3A, N, 0.

Diotec Semiconductor
3,590 -

RFQ

MMBT7002K

Ficha técnica

Strip - Active N-Channel MOSFET (Metal Oxide) 60 V 300mA (Ta) 4.5V, 10V 3Ohm @ 500mA, 10V 2.5V @ 250µA - ±20V 50 pF @ 25 V - 350mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
YJD80G06A

YJD80G06A

N-CH MOSFET 60V 80A TO-252

Yangzhou Yangjie Electronic Technology Co.,Ltd
2,324 -

RFQ

YJD80G06A

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 4.5V, 10V 8mOhm @ 20A, 10V 2.2V @ 250µA 31 nC @ 10 V ±20V 1990 pF @ 30 V - 85W (Tc) -55°C ~ 175°C (TJ) Surface Mount
2N7002

2N7002

MOSFET, SOT-23, 60V, 0.28A, N, 0

Diotec Semiconductor
2,849 -

RFQ

2N7002

Ficha técnica

Strip - Active N-Channel MOSFET (Metal Oxide) 60 V 280mA (Ta) 5V, 10V 5Ohm @ 500mA, 10V 2.5V @ 250µA - ±30V 50 pF @ 25 V - 350mW (Ta) 150°C (TJ) Surface Mount
IRF7413TRPBF-1

IRF7413TRPBF-1

MOSFET N-CH 30V 13A 8SO

International Rectifier
3,274 -

RFQ

IRF7413TRPBF-1

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) 4.5V, 10V 11mOhm @ 7.3A, 10V 3V @ 250µA 79 nC @ 10 V ±20V 1800 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
MMBT7002K-AQ

MMBT7002K-AQ

MOSFET, SOT-23, 60V, 0.3A, N, 0.

Diotec Semiconductor
3,824 -

RFQ

MMBT7002K-AQ

Ficha técnica

Strip - Active N-Channel MOSFET (Metal Oxide) 60 V 300mA (Ta) 4.5V, 10V 3Ohm @ 500mA, 10V 2.5V @ 250µA - ±20V 50 pF @ 25 V - 350mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF640PBF-BE3

IRF640PBF-BE3

MOSFET N-CH 200V 18A TO220AB

Vishay Siliconix
423 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 70 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFB3306GPBF

IRFB3306GPBF

MOSFET N-CH 60V 120A TO220AB

Infineon Technologies
984 -

RFQ

IRFB3306GPBF

Ficha técnica

Tube HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 4.2mOhm @ 75A, 10V 4V @ 150µA 120 nC @ 10 V ±20V 4520 pF @ 50 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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