Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
STP62NS04Z

STP62NS04Z

MOSFET N-CH 33V 62A TO220AB

STMicroelectronics
505 -

RFQ

STP62NS04Z

Ficha técnica

Tube MESH OVERLAY™ Active N-Channel MOSFET (Metal Oxide) 33 V 62A (Tc) 10V 15mOhm @ 30A, 10V 4V @ 250µA 47 nC @ 10 V Clamped 1330 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
TK8A65D(STA4,Q,M)

TK8A65D(STA4,Q,M)

MOSFET N-CH 650V 8A TO220SIS

Toshiba Semiconductor and Storage
2,444 -

RFQ

TK8A65D(STA4,Q,M)

Ficha técnica

Bulk π-MOSVII Active N-Channel MOSFET (Metal Oxide) 650 V 8A (Ta) 10V 840mOhm @ 4A, 10V 4V @ 1mA 25 nC @ 10 V ±30V 1350 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
IRL640PBF-BE3

IRL640PBF-BE3

MOSFET N-CH 200V 17A TO220AB

Vishay Siliconix
317 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 17A (Tc) 4V, 5V 180mOhm @ 10A, 5V 2V @ 250µA 66 nC @ 5 V ±10V 1800 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLI3705NPBF

IRLI3705NPBF

MOSFET N-CH 55V 52A TO220AB FP

Infineon Technologies
547 -

RFQ

IRLI3705NPBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 52A (Tc) 4V, 10V 10mOhm @ 28A, 10V 2V @ 250µA 98 nC @ 5 V ±16V 3600 pF @ 25 V - 58W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUF75639P3

HUF75639P3

MOSFET N-CH 100V 56A TO220-3

onsemi
259 -

RFQ

HUF75639P3

Ficha técnica

Tube UltraFET™ Active N-Channel MOSFET (Metal Oxide) 100 V 56A (Tc) 10V 25mOhm @ 56A, 10V 4V @ 250µA 130 nC @ 20 V ±20V 2000 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF9Z30PBF

IRF9Z30PBF

MOSFET P-CH 50V 18A TO220AB

Vishay Siliconix
187 -

RFQ

IRF9Z30PBF

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 50 V 18A (Tc) 10V 140mOhm @ 9.3A, 10V 4V @ 250µA 39 nC @ 10 V ±20V 900 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDP150N10A-F102

FDP150N10A-F102

MOSFET N-CH 100V 50A TO220-3

onsemi
354 -

RFQ

FDP150N10A-F102

Ficha técnica

Tube PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 50A (Tc) 10V 15mOhm @ 50A, 10V 4V @ 250µA 21 nC @ 10 V ±20V 1440 pF @ 50 V - 91W (Tc) -55°C ~ 175°C (TJ) Through Hole
TK65E10N1,S1X

TK65E10N1,S1X

MOSFET N CH 100V 148A TO220

Toshiba Semiconductor and Storage
134 -

RFQ

TK65E10N1,S1X

Ficha técnica

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 100 V 148A (Ta) 10V 4.8mOhm @ 32.5A, 10V 4V @ 1mA 81 nC @ 10 V ±20V 5400 pF @ 50 V - 192W (Tc) 150°C (TJ) Through Hole
FCP125N65S3

FCP125N65S3

POWER MOSFET, N-CHANNEL, SUPERFE

onsemi
2,021 -

RFQ

FCP125N65S3

Ficha técnica

Bulk SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 125mOhm @ 12A, 10V 4.5V @ 2.4mA 46 nC @ 10 V ±30V 1940 pF @ 400 V - 181W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCD900N60Z

FCD900N60Z

POWER FIELD-EFFECT TRANSISTOR, 4

onsemi
3,645 -

RFQ

FCD900N60Z

Ficha técnica

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 600 V 4.5A (Tc) 10V 900mOhm @ 2.3A, 10V 3.5V @ 250µA 17 nC @ 10 V ±20V 720 pF @ 25 V - 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR18N15DTRPBF

IRFR18N15DTRPBF

IRFR18N15 - 12V-300V N-CHANNEL P

Infineon Technologies
2,163 -

RFQ

IRFR18N15DTRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 18A (Tc) - 125mOhm @ 11A, 10V 5.5V @ 250µA 43 nC @ 10 V ±30V 900 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTMFS4C50NT1G

NTMFS4C50NT1G

30 V, 46A, SINGLE N-CHANNEL, POW

onsemi
3,881 -

RFQ

NTMFS4C50NT1G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDC3535

FDC3535

P-CHANNEL POWER TRENCH MOSFET, -

onsemi
2,915 -

RFQ

FDC3535

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 80 V 2.1A (Ta) 4.5V, 10V 183mOhm @ 2.1A, 10V 3V @ 250µA 20 nC @ 10 V ±20V 880 pF @ 40 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDMC86184

FDMC86184

N-CHANNEL SHIELDED GATE POWERTRE

onsemi
2,930 -

RFQ

FDMC86184

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 57A (Tc) 6V, 10V 8.5mOhm @ 21A, 10V 4V @ 110µA 20 nC @ 6 V ±20V 2090 pF @ 50 V - 54W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NX7002BKWX

NX7002BKWX

SMALL SIGNAL FIELD-EFFECT TRANSI

Nexperia USA Inc.
3,908 -

RFQ

NX7002BKWX

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 270mA (Ta) 5V, 10V 2.8Ohm @ 200mA, 10V 2.1V @ 250µA 1 nC @ 10 V ±20V 23.6 pF @ 10 V - 310mW (Ta), 1.67W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDP032N08

FDP032N08

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
2,750 -

RFQ

FDP032N08

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 10V 3.2mOhm @ 75A, 10V 4.5V @ 250µA 220 nC @ 10 V ±20V 15160 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUFA76419D3ST

HUFA76419D3ST

N-CHANNEL LOGIC LEVEL ULTRAFET P

onsemi
2,024 -

RFQ

HUFA76419D3ST

Ficha técnica

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 20A (Tc) 4.5V, 10V 37mOhm @ 20A, 10V 3V @ 250µA 27.5 nC @ 10 V ±16V 900 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PSMN015-60PS,127

PSMN015-60PS,127

NEXPERIA PSMN015-60PS - 50A, 60V

NXP Semiconductors
3,869 -

RFQ

PSMN015-60PS,127

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 14.8mOhm @ 15A, 10V 4V @ 1mA 20.9 nC @ 10 V ±20V 1220 pF @ 30 V - 86W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTF3055L108T3G

NTF3055L108T3G

NTF3055L108 - SINGLE N-CHANNEL L

onsemi
3,275 -

RFQ

NTF3055L108T3G

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 3A (Ta) 5V 120mOhm @ 1.5A, 5V 2V @ 250µA 15 nC @ 5 V ±15V 440 pF @ 25 V - 1.3W (Ta) -55°C ~ 175°C (TJ) Surface Mount
PSMN2R2-40BS,118

PSMN2R2-40BS,118

NEXPERIA PSMN2R2-40BS - 100A, 40

Nexperia USA Inc.
2,769 -

RFQ

PSMN2R2-40BS,118

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 2.2mOhm @ 25A, 10V 4V @ 1mA 130 nC @ 10 V ±20V 8423 pF @ 20 V - 306W (Tc) -55°C ~ 175°C (TJ) Surface Mount
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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