Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDS8960C

FDS8960C

DUAL N & P-CHANNEL POWERTRENCH M

onsemi
3,521 -

RFQ

FDS8960C

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPU95R1K2P7AKMA1

IPU95R1K2P7AKMA1

IPU95R1K2P7 - 950V COOLMOS N-CHA

Infineon Technologies
2,250 -

RFQ

IPU95R1K2P7AKMA1

Ficha técnica

Bulk CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 950 V 6A (Tc) 10V 1.2Ohm @ 2.7A, 10V 3.5V @ 140µA 15 nC @ 10 V ±20V 478 pF @ 400 V - 52W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDD3672-F085

FDD3672-F085

FDD3672 - N-CHANNEL ULTRAFET TRE

onsemi
2,687 -

RFQ

FDD3672-F085

Ficha técnica

Bulk Automotive, AEC-Q101, UltraFET™ Active N-Channel MOSFET (Metal Oxide) 100 V 44A (Tc) 6V, 10V 47mOhm @ 21A, 6V 4V @ 250µA 36 nC @ 10 V ±20V 1635 pF @ 25 V - 144W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFSA8409-7P

AUIRFSA8409-7P

AUIRFSA8409-7P - 20V-800V AUTOMO

International Rectifier
2,686 -

RFQ

AUIRFSA8409-7P

Ficha técnica

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 523A (Tc) 10V 0.69mOhm @ 100A, 10V 3.9V @ 250µA 460 nC @ 10 V ±20V 13975 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK7230-55A/C1,118

BUK7230-55A/C1,118

N-CHANNEL TRENCHMOS STANDARD LEV

Nexperia USA Inc.
3,369 -

RFQ

BUK7230-55A/C1,118

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BLA0912-250

BLA0912-250

BLA0912-250 - N-CHANNEL LDMOS AV

Rochester Electronics, LLC
2,786 -

RFQ

BLA0912-250

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDC2512

FDC2512

N-CHANNEL POWERTRENCH MOSFET 150

onsemi
3,825 -

RFQ

FDC2512

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 150 V 1.4A (Ta) 6V, 10V 425mOhm @ 1.4A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 344 pF @ 75 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF3205PBF

IRF3205PBF

IRF3205 - 12V-300V N-CHANNEL POW

International Rectifier
2,766 -

RFQ

IRF3205PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 110A (Tc) 10V 8mOhm @ 62A, 10V 4V @ 250µA 146 nC @ 10 V ±20V 3247 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
PSMN9R5-30YLC,115

PSMN9R5-30YLC,115

NEXPERIA PSMN9R5-30YLC - 44A, 30

NXP Semiconductors
2,357 -

RFQ

PSMN9R5-30YLC,115

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BSB014N04LX3GXUMA1

BSB014N04LX3GXUMA1

BSB014N04 - TRENCH <= 40V

Infineon Technologies
3,484 -

RFQ

BSB014N04LX3GXUMA1

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 36A (Ta), 180A (Tc) 4.5V, 10V 1.4mOhm @ 30A, 10V 2V @ 250µA 196 nC @ 10 V ±20V 16900 pF @ 20 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
FDN357N

FDN357N

FDN357N - SMALL SIGNAL FIELD-EFF

onsemi
2,352 -

RFQ

FDN357N

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 1.9A (Ta) 4.5V, 10V 60mOhm @ 2.2A, 10V 2V @ 250µA 5.9 nC @ 5 V ±20V 235 pF @ 10 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDMC0310AS-F127

FDMC0310AS-F127

N-CHANNEL POWERTRENCH SYNCFET 30

onsemi
3,307 -

RFQ

FDMC0310AS-F127

Ficha técnica

Bulk PowerTrench®, SyncFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 21A (Tc) - 4.4mOhm @ 19A, 10V 3V @ 1mA 52 nC @ 10 V - 3165 pF @ 15 V - - - Surface Mount
IRFSL3207ZPBF

IRFSL3207ZPBF

IRFSL3207 - 12V-300V N-CHANNEL P

Infineon Technologies
3,478 -

RFQ

IRFSL3207ZPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 10V 4.1mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6920 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRF7749L2TR

AUIRF7749L2TR

AUIRF7749L2 - 55V-60V N-CHANNEL

International Rectifier
3,471 -

RFQ

AUIRF7749L2TR

Ficha técnica

Bulk Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 36A (Ta), 345A (Tc) 10V 1.5mOhm @ 120A, 10V 4V @ 250µA 275 nC @ 10 V 60V 10655 pF @ 25 V - 3.8W (Ta), 341W (Tc) -55°C ~ 175°C (TJ) Surface Mount
2N7002-F169

2N7002-F169

2N7002 - TRANSISTOR

onsemi
2,920 -

RFQ

2N7002-F169

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
SPB07N60C3ATMA1

SPB07N60C3ATMA1

SPB07N60 - COOLMOS, 7.3A, 600V N

Infineon Technologies
2,189 -

RFQ

SPB07N60C3ATMA1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
MMBFJ201

MMBFJ201

N-CHANNEL GENERAL PURPOSE AMPLIF

onsemi
2,183 -

RFQ

MMBFJ201

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPG20N06S4L11ATMA2

IPG20N06S4L11ATMA2

MOSFET_)40V,60V)

Infineon Technologies
2,348 -

RFQ

IPG20N06S4L11ATMA2

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BUK9Y2R8-40HX

BUK9Y2R8-40HX

BUK9Y2R8-40H - N-CHANNEL 40V, LO

Nexperia USA Inc.
3,192 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
NTD5406NT4G

NTD5406NT4G

NTD5406 - POWER MOSFET 40V 70A 1

onsemi
2,917 -

RFQ

NTD5406NT4G

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 40 V 12.2A (Ta), 70A (Tc) 5V, 10V 10mOhm @ 30A, 10V 3.5V @ 250µA 45 nC @ 10 V ±20V 2500 pF @ 32 V - 3W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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