Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
STF24N60M2

STF24N60M2

MOSFET N-CH 600V 18A TO220FP

STMicroelectronics
1,409 -

RFQ

STF24N60M2

Ficha técnica

Tube MDmesh™ II Plus Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 190mOhm @ 9A, 10V 4V @ 250µA 29 nC @ 10 V ±25V 1060 pF @ 100 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP110N10F7

STP110N10F7

MOSFET N CH 100V 110A TO-220

STMicroelectronics
1,521 -

RFQ

STP110N10F7

Ficha técnica

Tube DeepGATE™, STripFET™ VII Active N-Channel MOSFET (Metal Oxide) 100 V 110A (Tc) 10V 7mOhm @ 55A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 5500 pF @ 50 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
R6024KNX

R6024KNX

MOSFET N-CH 600V 24A TO220FM

Rohm Semiconductor
2,513 -

RFQ

R6024KNX

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V 165mOhm @ 11.3A, 10V 5V @ 1mA 45 nC @ 10 V ±20V 2000 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFB7434PBF

IRFB7434PBF

MOSFET N-CH 40V 195A TO220AB

Infineon Technologies
480 -

RFQ

IRFB7434PBF

Ficha técnica

Tube HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 6V, 10V 1.6mOhm @ 100A, 10V 3.9V @ 250µA 324 nC @ 10 V ±20V 10820 pF @ 25 V - 294W (Tc) -55°C ~ 175°C (TJ) Through Hole
STP80NF70

STP80NF70

MOSFET N-CH 68V 98A TO220AB

STMicroelectronics
2,641 -

RFQ

STP80NF70

Ficha técnica

Tube STripFET™ II Not For New Designs N-Channel MOSFET (Metal Oxide) 68 V 98A (Tc) 10V 9.8mOhm @ 40A, 10V 4V @ 250µA 75 nC @ 10 V ±20V 2550 pF @ 25 V - 190W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFI540GPBF

IRFI540GPBF

MOSFET N-CH 100V 17A TO220-3

Vishay Siliconix
823 -

RFQ

IRFI540GPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 17A (Tc) 10V 77mOhm @ 10A, 10V 4V @ 250µA 72 nC @ 10 V ±20V 1700 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP019N08NF2SAKMA1

IPP019N08NF2SAKMA1

TRENCH 40<-<100V

Infineon Technologies
2,199 -

RFQ

IPP019N08NF2SAKMA1

Ficha técnica

Tube StrongIRFET™ 2 Active N-Channel MOSFET (Metal Oxide) 80 V 32A (Ta), 191A (Tc) 6V, 10V 1.9mOhm @ 100A, 10V 3.8V @ 194µA 186 nC @ 10 V ±20V 8700 pF @ 40 V - 3.8W (Ta), 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB3206GPBF

IRFB3206GPBF

MOSFET N-CH 60V 120A TO220AB

Infineon Technologies
169 -

RFQ

IRFB3206GPBF

Ficha técnica

Tube HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 3mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6540 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
STU2NK100Z

STU2NK100Z

MOSFET N-CH 1000V 1.85A IPAK

STMicroelectronics
2,736 -

RFQ

STU2NK100Z

Ficha técnica

Tube SuperMESH™ Active N-Channel MOSFET (Metal Oxide) 1000 V 1.85A (Tc) 10V 8.5Ohm @ 900mA, 10V 4.5V @ 50µA 16 nC @ 10 V ±30V 499 pF @ 25 V - 70W (Tc) -55°C ~ 150°C (TJ) Through Hole
SUP90P06-09L-E3

SUP90P06-09L-E3

MOSFET P-CH 60V 90A TO220AB

Vishay Siliconix
1,012 -

RFQ

SUP90P06-09L-E3

Ficha técnica

Tube TrenchFET® Active P-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 4.5V, 10V 9.3mOhm @ 30A, 10V 3V @ 250µA 240 nC @ 10 V ±20V 9200 pF @ 25 V - 2.4W (Ta), 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
AOK2500L

AOK2500L

MOSFET N-CH 150V 14A/180A TO247

Alpha & Omega Semiconductor Inc.
2,992 -

RFQ

AOK2500L

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 150 V 14A (Ta), 180A (Tc) 6V, 10V 6.2mOhm @ 20A, 10V 3.5V @ 250µA 136 nC @ 10 V ±20V 6460 pF @ 75 V - 3.1W (Ta), 500W (Tc) -55°C ~ 175°C (TJ) Through Hole
STW120NF10

STW120NF10

MOSFET N-CH 100V 110A TO247-3

STMicroelectronics
455 -

RFQ

STW120NF10

Ficha técnica

Tube STripFET™ II Active N-Channel MOSFET (Metal Oxide) 100 V 110A (Tc) 10V 10.5mOhm @ 60A, 10V 4V @ 250µA 233 nC @ 10 V ±20V 5200 pF @ 25 V - 312W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP350LCPBF

IRFP350LCPBF

MOSFET N-CH 400V 16A TO247-3

Vishay Siliconix
3,302 -

RFQ

IRFP350LCPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 16A (Tc) 10V 300mOhm @ 9.6A, 10V 4V @ 250µA 76 nC @ 10 V ±30V 2200 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP6N95K5

STP6N95K5

MOSFET N-CH 950V 9A TO220-3

STMicroelectronics
2,543 -

RFQ

STP6N95K5

Ficha técnica

Tube SuperMESH5™ Active N-Channel MOSFET (Metal Oxide) 950 V 9A (Tc) 10V 1.25Ohm @ 3A, 10V 5V @ 100µA 13 nC @ 10 V ±30V 450 pF @ 100 V - 90W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP20NF20

STP20NF20

MOSFET N-CH 200V 18A TO220AB

STMicroelectronics
163 -

RFQ

STP20NF20

Ficha técnica

Tube STripFET™ Active N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 125mOhm @ 10A, 10V 4V @ 250µA 39 nC @ 10 V ±20V 940 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQP45N15V2

FQP45N15V2

MOSFET N-CH 150V 45A TO220-3

onsemi
570 -

RFQ

FQP45N15V2

Ficha técnica

Tube QFET® Active N-Channel MOSFET (Metal Oxide) 150 V 45A (Tc) 10V 40mOhm @ 22.5A, 10V 4V @ 250µA 94 nC @ 10 V ±30V 3030 pF @ 25 V - 220W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDP2552

FDP2552

MOSFET N-CH 150V 5A/37A TO220-3

onsemi
770 -

RFQ

FDP2552

Ficha técnica

Tube PowerTrench® Active N-Channel MOSFET (Metal Oxide) 150 V 5A (Ta), 37A (Tc) 6V, 10V 36mOhm @ 16A, 10V 4V @ 250µA 51 nC @ 10 V ±20V 2800 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQPF85N06

FQPF85N06

MOSFET N-CH 60V 53A TO220F

onsemi
315 -

RFQ

FQPF85N06

Ficha técnica

Tube QFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 60 V 53A (Tc) 10V 10mOhm @ 26.5A, 10V 4V @ 250µA 112 nC @ 10 V ±25V 4120 pF @ 25 V - 62W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPA65R225C7XKSA1

IPA65R225C7XKSA1

MOSFET N-CH 650V 7A TO220-FP

Infineon Technologies
2,050 -

RFQ

IPA65R225C7XKSA1

Ficha técnica

Tube CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 225mOhm @ 4.8A, 10V 4V @ 240µA 20 nC @ 10 V ±20V 996 pF @ 400 V - 29W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQP7P06

FQP7P06

MOSFET P-CH 60V 7A TO220-3

onsemi
943 -

RFQ

FQP7P06

Ficha técnica

Tube QFET® Last Time Buy P-Channel MOSFET (Metal Oxide) 60 V 7A (Tc) 10V 410mOhm @ 3.5A, 10V 4V @ 250µA 8.2 nC @ 10 V ±25V 295 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
1500+
1500+ Média diária de RFQ
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20,000.000 Unidade padrão do produto
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1800+ Fabricantes em todo o mundo
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15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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