Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDT1600N10ALZ

FDT1600N10ALZ

N-CHANNEL POWERTRENCH MOSFET 100

onsemi
2,823 -

RFQ

FDT1600N10ALZ

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 5.6A (Tc) 5V, 10V 160mOhm @ 2.8A, 10V 2.8V @ 250µA 3.77 nC @ 10 V ±20V 225 pF @ 50 V - 10.42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDD5680

FDD5680

POWER FIELD-EFFECT TRANSISTOR, 3

onsemi
3,303 -

RFQ

FDD5680

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 8.5A (Ta) 6V, 10V 21mOhm @ 8.5A, 10V 4V @ 250µA 46 nC @ 10 V ±20V 1835 pF @ 30 V - 2.8W (Ta), 60W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NTMFS6B14NT3G

NTMFS6B14NT3G

NTMFS6B14 - SINGLE N-CHANNEL POW

onsemi
2,045 -

RFQ

NTMFS6B14NT3G

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 10A (Ta), 50A (Tc) 6V, 10V 15mOhm @ 20A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 1300 pF @ 50 V - 3.1W (Ta), 77W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPP120P04P4L03AKSA2

IPP120P04P4L03AKSA2

MOSFET_(20V,40V)

Infineon Technologies
2,315 -

RFQ

IPP120P04P4L03AKSA2

Ficha técnica

Bulk OptiMOS®-P2 Active P-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 4.5V, 10V 3.4mOhm @ 100A, 10V 2.2V @ 340µA 234 nC @ 10 V +5V, -16V 15000 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTMFS4C06NBT1G

NTMFS4C06NBT1G

NTMFS4C06 - NFET SO8FL 30V 69A 4

onsemi
3,440 -

RFQ

NTMFS4C06NBT1G

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 20A (Ta), 69A (Tc) 4.5V, 10V 4mOhm @ 30A, 10V 2.1V @ 250µA 26 nC @ 10 V ±20V 1683 pF @ 15 V - 2.55W (Ta), 30.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDS2734

FDS2734

N-CHANNEL UITRAFET TRENCH MOSFET

onsemi
2,257 -

RFQ

FDS2734

Ficha técnica

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 250 V 3A (Ta) 6V, 10V 117mOhm @ 3A, 10V 4V @ 250µA 45 nC @ 10 V ±20V 2610 pF @ 100 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF3708PBF

IRF3708PBF

IRF3708 - 12V-300V N-CHANNEL POW

Infineon Technologies
2,964 -

RFQ

IRF3708PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 62A (Tc) 2.8V, 10V 12mOhm @ 15A, 10V 2V @ 250µA 24 nC @ 4.5 V ±12V 2417 pF @ 15 V - 87W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDMS86300DC

FDMS86300DC

FDMS86300 - N-CHANNEL DUAL COOLT

onsemi
2,050 -

RFQ

FDMS86300DC

Ficha técnica

Bulk Dual Cool™, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 80 V 24A (Ta), 76A (Tc) 8V, 10V 3.1mOhm @ 24A, 10V 4.5V @ 250µA 101 nC @ 10 V ±20V 7005 pF @ 40 V - 3.2W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPAN60R800CEXKSA1

IPAN60R800CEXKSA1

IPAN60R800CE - 600V COOLMOS N-CH

Infineon Technologies
3,359 -

RFQ

IPAN60R800CEXKSA1

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 8.4A (Tc) 10V 800mOhm @ 2A, 10V 3.5V @ 170µA 17.2 nC @ 10 V ±20V 373 pF @ 100 V Super Junction 27W (Tc) -40°C ~ 150°C (TJ) Through Hole
FDD3672-F085

FDD3672-F085

FDD3672 - N-CHANNEL ULTRAFET TRE

Fairchild Semiconductor
2,644 -

RFQ

FDD3672-F085

Ficha técnica

Bulk Automotive, AEC-Q101, UltraFET™ Active N-Channel MOSFET (Metal Oxide) 100 V 44A (Tc) 6V, 10V 47mOhm @ 21A, 6V 4V @ 250µA 36 nC @ 10 V ±20V 1635 pF @ 25 V - 144W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7476TRPBF

IRF7476TRPBF

IRF7476 - 12V-300V N-CHANNEL POW

Infineon Technologies
3,144 -

RFQ

IRF7476TRPBF

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
2N7002BKM/V,315

2N7002BKM/V,315

NEXPERIA 2N7002BKM - SMALL SIGNA

NXP Semiconductors
3,789 -

RFQ

2N7002BKM/V,315

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
NTMFS5C410NT1G

NTMFS5C410NT1G

NTMFS5C410N - SINGLE N-CHANNEL P

onsemi
3,510 -

RFQ

NTMFS5C410NT1G

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 40 V 46A (Ta), 300A (Tc) 10V 0.92mOhm @ 50A, 10V 3.5V @ 250µA 86 nC @ 10 V ±20V 6100 pF @ 25 V - 3.9W (Ta), 166W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPA11N80C3 E8209

SPA11N80C3 E8209

800V COOLMOS N-CHANNEL POWER MOS

Infineon Technologies
2,185 -

RFQ

SPA11N80C3 E8209

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPC90N04S53R6ATMA1

IPC90N04S53R6ATMA1

MOSFET_(20V,40V)

Infineon Technologies
2,396 -

RFQ

IPC90N04S53R6ATMA1

Ficha técnica

Bulk Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 90A (Tc) 7V, 10V 3.6mOhm @ 45A, 10V 3.4V @ 23µA 32.6 nC @ 10 V ±20V 1950 pF @ 25 V - 63W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF7379QTR

AUIRF7379QTR

AUIRF7379Q - 30V-55V DUAL N AND

Infineon Technologies
3,426 -

RFQ

AUIRF7379QTR

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPP60R180C7XKSA1

IPP60R180C7XKSA1

IPP60R180 - 13A, 600V, N-CHANEL

Infineon Technologies
3,940 -

RFQ

IPP60R180C7XKSA1

Ficha técnica

Bulk CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 180mOhm @ 5.3A, 10V 4V @ 260µA 24 nC @ 10 V ±20V 1080 pF @ 400 V - 68W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCH041N60F

FCH041N60F

POWER FIELD-EFFECT TRANSISTOR, 7

onsemi
3,422 -

RFQ

FCH041N60F

Ficha técnica

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 600 V 76A (Tc) 10V 41mOhm @ 38A, 10V 5V @ 250µA 360 nC @ 10 V ±20V 14365 pF @ 100 V - 595W (Tc) -55°C ~ 150°C (TJ) Through Hole
PSMN2R0-30PL,127

PSMN2R0-30PL,127

NOW NEXPERIA PSMN2R0-30PL - 100A

Nexperia USA Inc.
3,290 -

RFQ

PSMN2R0-30PL,127

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 4.5V, 10V 2.1mOhm @ 15A, 10V 2.15V @ 1mA 117 nC @ 10 V ±20V 6810 pF @ 12 V - 211W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDN5632N-F085

FDN5632N-F085

N-CHANNEL LOGIC LEVEL POWERTRENC

onsemi
2,184 -

RFQ

FDN5632N-F085

Ficha técnica

Bulk Automotive, AEC-Q101, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 1.7A (Ta) 4.5V, 10V 82mOhm @ 1.7A, 10V 3V @ 250µA 12 nC @ 10 V ±20V 475 pF @ 15 V - 1.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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