Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IMW65R072M1HXKSA1

IMW65R072M1HXKSA1

SILICON CARBIDE MOSFET

Infineon Technologies
3,049 -

RFQ

IMW65R072M1HXKSA1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDG6335N

FDG6335N

N-CHANNEL POWERTRENCH MOSFET, 20

onsemi
2,692 -

RFQ

FDG6335N

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPB030N08N3GATMA1

IPB030N08N3GATMA1

IPB030N08N3G - OPTLMOS N-CHANNEL

Infineon Technologies
2,316 -

RFQ

IPB030N08N3GATMA1

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 160A (Tc) 6V, 10V 3mOhm @ 100A, 10V 3.5V @ 155µA 117 nC @ 10 V ±20V 8110 pF @ 40 V - 214W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTDV20N06LT4G-VF01

NTDV20N06LT4G-VF01

NTDV20N06 - SINGLE N-CHANNEL LOG

onsemi
3,503 -

RFQ

NTDV20N06LT4G-VF01

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 20A (Ta) 10V 46mOhm @ 10A, 10V 4V @ 250µA 30 nC @ 10 V ±20V 1015 pF @ 25 V - 1.88W (Ta) -55°C ~ 175°C (TJ) Surface Mount
SPW24N60CFDFKSA1

SPW24N60CFDFKSA1

HIGH POWER_LEGACY

Infineon Technologies
2,567 -

RFQ

SPW24N60CFDFKSA1

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 21.7A (Tc) 10V 185mOhm @ 15.4A, 10V 5V @ 1.2mA 143 nC @ 10 V ±20V 3160 pF @ 25 V - 240W (Tc) -55°C ~ 150°C (TJ) Through Hole
BUK7606-55B,118

BUK7606-55B,118

MOSFET N-CH 55V 75A D2PAK

NXP USA Inc.
2,003 -

RFQ

BUK7606-55B,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 6mOhm @ 25A, 10V 4V @ 1mA 64 nC @ 10 V ±20V 5100 pF @ 25 V - 254W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQP17P06

FQP17P06

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
3,967 -

RFQ

FQP17P06

Ficha técnica

Bulk QFET® Active P-Channel MOSFET (Metal Oxide) 60 V 17A (Tc) 10V 120mOhm @ 8.5A, 10V 4V @ 250µA 27 nC @ 10 V ±25V 900 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQB19N20TM

FQB19N20TM

MOSFET N-CH 200V 19.4A D2PAK

Fairchild Semiconductor
3,828 -

RFQ

FQB19N20TM

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 200 V 19.4A (Tc) 10V 150mOhm @ 9.7A, 10V 5V @ 250µA 40 nC @ 10 V ±30V 1600 pF @ 25 V - 3.13W (Ta), 140W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPW60R160P6

IPW60R160P6

POWER FIELD-EFFECT TRANSISTOR

Infineon Technologies
3,237 -

RFQ

IPW60R160P6

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 23.8A (Tc) 10V 160mOhm @ 9A, 10V 4.5V @ 750µA 44 nC @ 10 V ±20V 2080 pF @ 100 V - 176W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW65R095C7

IPW65R095C7

MOSFET N-CH 650V 24A TO247

Infineon Technologies
2,699 -

RFQ

Bulk CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) - 95mOhm @ 11.8A, 10V 4V @ 590µA 45 nC @ 10 V ±20V 2140 pF @ 400 V - 128W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCP125N60E

FCP125N60E

POWER FIELD-EFFECT TRANSISTOR, N

Fairchild Semiconductor
3,787 -

RFQ

FCP125N60E

Ficha técnica

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 125mOhm @ 14.5A, 10V 3.5V @ 250µA 95 nC @ 10 V ±20V 2990 pF @ 380 V - 278W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDD16AN08A0

FDD16AN08A0

POWER FIELD-EFFECT TRANSISTOR, 9

Fairchild Semiconductor
2,836 -

RFQ

FDD16AN08A0

Ficha técnica

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 75 V 9A (Ta), 50A (Tc) 6V, 10V 16mOhm @ 50A, 10V 4V @ 250µA 47 nC @ 10 V ±20V 1874 pF @ 25 V - 135W (Tc) -55°C ~ 175°C (TJ) Surface Mount
HUF76633P3-F085

HUF76633P3-F085

MOSFET N-CH 100V 39A TO220-3

Fairchild Semiconductor
2,821 -

RFQ

HUF76633P3-F085

Ficha técnica

Bulk Automotive, AEC-Q101, UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 39A (Tc) 4.5V, 10V 35mOhm @ 39A, 10V 3V @ 250µA 67 nC @ 10 V ±16V 1820 pF @ 25 V - 145W (Tc) -55°C ~ 175°C (TJ) Through Hole
GT060N04T

GT060N04T

MOSFET, N-CH, 40V,60A,TO-220

Goford Semiconductor
3,595 -

RFQ

Tube * Active - - - - - - - - - - - - - -
FDMS86252L

FDMS86252L

FDMS86252 - N-CHANNEL SHIELDED G

Fairchild Semiconductor
3,514 -

RFQ

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 4.4A (Ta), 12A (Tc) 4.5V, 10V 56mOhm @ 4.4A, 10V 3V @ 250µA 21 nC @ 10 V ±20V 1335 pF @ 75 V - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
UMW 100N03A

UMW 100N03A

TO-252 MOSFETS ROHS

UTD Semiconductor
2,785 -

RFQ

UMW 100N03A

Ficha técnica

Tape & Reel (TR) UMW Active N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 4.9mOhm @ 30A, 10V 2.5V @ 250µA 41 nC @ 10 V ±20V 1963 pF @ 15 V - 105W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDB42AN15A0-F085

FDB42AN15A0-F085

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor
3,385 -

RFQ

FDB42AN15A0-F085

Ficha técnica

Bulk Automotive, AEC-Q101, PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 35A (Tc) 10V 42mOhm @ 12A, 10V 4V @ 250µA 36 nC @ 10 V ±20V 2040 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF9540N

AUIRF9540N

AUIRF9540 - 20V-150V P-CHANNEL A

Infineon Technologies
2,566 -

RFQ

AUIRF9540N

Ficha técnica

Bulk Automotive, AEC-Q101 Active P-Channel MOSFET (Metal Oxide) 100 V 23A (Tc) 10V 117mOhm @ 11A, 10V 4V @ 250µA 97 nC @ 10 V ±20V 1300 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
BSC0704LSATMA1

BSC0704LSATMA1

MOSFET N-CH 60V 11A/47A TDSON

Infineon Technologies
2,677 -

RFQ

BSC0704LSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 11A (Ta), 47A (Tc) 4.5V, 10V 9.4mOhm @ 24A, 10V 2.3V @ 14µA 9.4 nC @ 4.5 V ±20V 1300 pF @ 30 V - 2.1W (Ta), 36W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSZ0909LSATMA1

BSZ0909LSATMA1

MOSFET N-CH 30V 19A/40A TSDSON

Infineon Technologies
3,687 -

RFQ

BSZ0909LSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 30 V 19A (Ta), 40A (Tc) 4.5V, 10V 3mOhm @ 20A, 10V 2V @ 250µA 26 nC @ 10 V ±20V 1700 pF @ 15 V - - -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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