Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
STP170N8F7

STP170N8F7

MOSFET N-CH 80V 120A TO220

STMicroelectronics
163 -

RFQ

STP170N8F7

Ficha técnica

Tube STripFET™ F7 Last Time Buy N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 10V 3.9mOhm @ 60A, 10V 4.5V @ 250µA 120 nC @ 10 V ±20V 8710 pF @ 40 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFI644GPBF

IRFI644GPBF

MOSFET N-CH 250V 7.9A TO220-3

Vishay Siliconix
940 -

RFQ

IRFI644GPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 250 V 7.9A (Tc) 10V 280mOhm @ 4.7A, 10V 4V @ 250µA 68 nC @ 10 V ±20V 1300 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDPF10N60NZ

FDPF10N60NZ

MOSFET N-CH 600V 10A TO220F

onsemi
626 -

RFQ

FDPF10N60NZ

Ficha técnica

Tube UniFET-II™ Last Time Buy N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 750mOhm @ 5A, 10V 5V @ 250µA 30 nC @ 10 V ±25V 1475 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP054NPBF

IRFP054NPBF

MOSFET N-CH 55V 81A TO247AC

Infineon Technologies
367 -

RFQ

IRFP054NPBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 81A (Tc) 10V 12mOhm @ 43A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 2900 pF @ 25 V - 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDD4243-G

FDD4243-G

-40V P-CHANNEL POWERTRENCH MOSFE

onsemi
2,907 -

RFQ

Tape & Reel (TR) PowerTrench® Active P-Channel MOSFET (Metal Oxide) 40 V 6.7A (Ta), 14A (Tc) 4.5V, 10V 44mOhm @ 6.7A, 10V 3V @ 250µA 29 nC @ 10 V ±20V 1550 pF @ 20 V - 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPP60R600C6

IPP60R600C6

7.3A, 600V, 0.6OHM, N-CHANNEL MO

Infineon Technologies
3,219 -

RFQ

IPP60R600C6

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 7.3A (Tc) 10V 600mOhm @ 2.4A, 10V 3.5V @ 200µA 20.5 nC @ 10 V ±20V 440 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) Through Hole
DI068N03PQ-AQ

DI068N03PQ-AQ

MOSFET, 30V, 68A, 25W

Diotec Semiconductor
3,373 -

RFQ

DI068N03PQ-AQ

Ficha técnica

Tape & Reel (TR),Tape & Reel (TR),Bulk Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 30 V 68A (Tc) - 4mOhm @ 20A, 10V 2.5V @ 250µA 79 nC @ 10 V ±20V 3650 pF @ 15 V - 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
DI035P04PT

DI035P04PT

MOSFET, -40V, -35A, 25W

Diotec Semiconductor
3,209 -

RFQ

DI035P04PT

Ficha técnica

Tape & Reel (TR),Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 40 V 35A (Tc) 4.5V, 10V 19mOhm @ 10A, 10V 2.5V @ 250µA 30 nC @ 10 V ±20V 2570 pF @ 20 V - 40W (Tc) -55°C ~ 150°C (TJ) Surface Mount
G70N04T

G70N04T

N40V,RD(MAX)<7M@10V,RD(MAX)<12M@

Goford Semiconductor
2,961 -

RFQ

G70N04T

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 40 V 70A (Tc) 4.5V, 10V 7mOhm @ 30A, 10V 2.4V @ 250µA 50 nC @ 10 V ±20V 4010 pF @ 20 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
DI045N03PT-AQ

DI045N03PT-AQ

MOSFET, 30V, 45A, 16W

Diotec Semiconductor
3,927 -

RFQ

DI045N03PT-AQ

Ficha técnica

Tape & Reel (TR),Tape & Reel (TR),Bulk Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 30 V 45A (Tc) - 4.4mOhm @ 24A, 10V 2.5V @ 250µA 53 nC @ 10 V ±20V 2300 pF @ 15 V - 16W (Tc) -55°C ~ 150°C (TJ) Surface Mount
DI040N03PT-AQ

DI040N03PT-AQ

MOSFET, 30V, 40A, 25W

Diotec Semiconductor
2,009 -

RFQ

DI040N03PT-AQ

Ficha técnica

Tape & Reel (TR),Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 30 V 40A (Tc) 4.5V, 10V 7mOhm @ 15A, 10V 2.5V @ 250µA 12 nC @ 4.5 V ±20V 1120 pF @ 15 V - 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
DI035P04PT-AQ

DI035P04PT-AQ

MOSFET, -40V, -35A, P, 25W

Diotec Semiconductor
2,261 -

RFQ

DI035P04PT-AQ

Ficha técnica

Tape & Reel (TR),Tape & Reel (TR) Automotive, AEC-Q101 Active P-Channel MOSFET (Metal Oxide) 40 V 35A (Tc) 4.5V, 10V 19mOhm @ 10A, 10V 2.5V @ 250µA 30 nC @ 10 V ±20V 2570 pF @ 20 V - 40W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BUK664R4-55C,118

BUK664R4-55C,118

NEXPERIA BUK664R4 - N-CHANNEL T

NXP Semiconductors
3,281 -

RFQ

BUK664R4-55C,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 100A (Tc) 5V, 10V 4.9mOhm @ 25A, 10V 2.8V @ 1mA 124 nC @ 10 V ±16V 7750 pF @ 25 V - 204W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK664R4-55C,118

BUK664R4-55C,118

NEXPERIA BUK664R4 - N-CHANNEL T

Nexperia USA Inc.
3,621 -

RFQ

BUK664R4-55C,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 100A (Tc) 5V, 10V 4.9mOhm @ 25A, 10V 2.8V @ 1mA 124 nC @ 10 V ±16V 7750 pF @ 25 V - 204W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC014N03LSGATMA1

BSC014N03LSGATMA1

BSC014N03 - 12V-300V N-CHANNEL P

Infineon Technologies
2,262 -

RFQ

BSC014N03LSGATMA1

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 34A (Ta), 100A (Tc) 4.5V, 10V 1.4mOhm @ 30A, 10V 2.2V @ 250µA 131 nC @ 10 V ±20V 10000 pF @ 15 V - 2.5W (Ta), 139W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF322

IRF322

N-CHANNEL HERMETIC MOS HEXFET

International Rectifier
2,449 -

RFQ

IRF322

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
HUF76423P3

HUF76423P3

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor
3,456 -

RFQ

HUF76423P3

Ficha técnica

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 35A (Tc) 4.5V, 10V 30mOhm @ 35A, 10V 3V @ 250µA 34 nC @ 10 V ±16V 1060 pF @ 25 V - 85W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFR9024N

AUIRFR9024N

MOSFET P-CH 55V 11A DPAK

International Rectifier
3,934 -

RFQ

AUIRFR9024N

Ficha técnica

Bulk HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 55 V 11A (Tc) 10V 175mOhm @ 6.6A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 350 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSZ0910LSATMA1

BSZ0910LSATMA1

MOSFET N-CH 30V 18A/40A TSDSON

Infineon Technologies
3,304 -

RFQ

BSZ0910LSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 30 V 18A (Ta), 40A (Tc) 4.5V, 10V 4.5mOhm @ 30A, 10V 2V @ 250µA 17 nC @ 10 V ±20V 1100 pF @ 15 V - 2.1W (Ta), 37W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDS6574A

FDS6574A

SMALL SIGNAL FIELD-EFFECT TRANSI

onsemi
2,717 -

RFQ

FDS6574A

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 20 V 16A (Ta) 1.8V, 4.5V 6mOhm @ 16A, 4.5V 1.5V @ 250µA 105 nC @ 4.5 V ±8V 7657 pF @ 10 V - 2.5W (Ta) -55°C ~ 175°C (TJ) Surface Mount
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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