Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
STF13NM60ND

STF13NM60ND

MOSFET N-CH 600V 11A TO220FP

STMicroelectronics
118 -

RFQ

STF13NM60ND

Ficha técnica

Tube FDmesh™ II Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 380mOhm @ 5.5A, 10V 5V @ 250µA 24.5 nC @ 10 V ±25V 845 pF @ 50 V - 25W (Tc) 150°C (TJ) Through Hole
STP10NK80Z

STP10NK80Z

MOSFET N-CH 800V 9A TO220AB

STMicroelectronics
1,173 -

RFQ

STP10NK80Z

Ficha técnica

Tube SuperMESH™ Active N-Channel MOSFET (Metal Oxide) 800 V 9A (Tc) 10V 900mOhm @ 4.5A, 10V 4.5V @ 100µA 72 nC @ 10 V ±30V 2180 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDA28N50

FDA28N50

MOSFET N-CH 500V 28A TO3PN

onsemi
2,579 -

RFQ

FDA28N50

Ficha técnica

Tube UniFET™ Active N-Channel MOSFET (Metal Oxide) 500 V 28A (Tc) 10V 155mOhm @ 14A, 10V 5V @ 250µA 105 nC @ 10 V ±30V 5140 pF @ 25 V - 310W (Tc) -55°C ~ 150°C (TJ) Through Hole
STW20NK50Z

STW20NK50Z

MOSFET N-CH 500V 17A TO247-3

STMicroelectronics
3,185 -

RFQ

STW20NK50Z

Ficha técnica

Tube SuperMESH™ Active N-Channel MOSFET (Metal Oxide) 500 V 17A (Tc) 10V 270mOhm @ 8.5A, 10V 4.5V @ 100µA 119 nC @ 10 V ±30V 2600 pF @ 25 V - 190W (Tc) 150°C (TJ) Through Hole
IPP048N12N3GXKSA1

IPP048N12N3GXKSA1

MOSFET N-CH 120V 100A TO220-3

Infineon Technologies
3,320 -

RFQ

IPP048N12N3GXKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 120 V 100A (Tc) 10V 4.8mOhm @ 100A, 10V 4V @ 230µA 182 nC @ 10 V ±20V 12000 pF @ 60 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
STP45N40DM2AG

STP45N40DM2AG

MOSFET N-CH 400V 38A TO220

STMicroelectronics
3,069 -

RFQ

STP45N40DM2AG

Ficha técnica

Tube Automotive, AEC-Q101, MDmesh™ DM2 Active N-Channel MOSFET (Metal Oxide) 400 V 38A (Tc) 10V 72mOhm @ 19A, 10V 5V @ 250µA 56 nC @ 10 V ±25V 2600 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP30N65M5

STP30N65M5

MOSFET N-CH 650V 22A TO220AB

STMicroelectronics
6,188 -

RFQ

STP30N65M5

Ficha técnica

Tube MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 22A (Tc) 10V 139mOhm @ 11A, 10V 5V @ 250µA 64 nC @ 10 V ±25V 2880 pF @ 100 V - 140W (Tc) 150°C (TJ) Through Hole
SIHFPS37N50A-GE3

SIHFPS37N50A-GE3

POWER MOSFET SUPER-247, 130 M @

Vishay Siliconix
3,112 -

RFQ

SIHFPS37N50A-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 36A (Tc) 10V 130mOhm @ 22A, 10V 4V @ 250µA 180 nC @ 10 V ±30V 5579 pF @ 25 V - 446W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP20NM60FP

STP20NM60FP

MOSFET N-CH 600V 20A TO220FP

STMicroelectronics
153 -

RFQ

STP20NM60FP

Ficha técnica

Tube MDmesh™ Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 290mOhm @ 10A, 10V 5V @ 250µA 54 nC @ 10 V ±30V 1500 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
STW26NM60N

STW26NM60N

MOSFET N-CH 600V 20A TO247-3

STMicroelectronics
462 -

RFQ

STW26NM60N

Ficha técnica

Tube MDmesh™ II Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 165mOhm @ 10A, 10V 4V @ 250µA 60 nC @ 10 V ±30V 1800 pF @ 50 V - 140W (Tc) 150°C (TJ) Through Hole
FCA35N60

FCA35N60

MOSFET N-CH 600V 35A TO3PN

onsemi
2,974 -

RFQ

FCA35N60

Ficha técnica

Tube SuperFET™ Last Time Buy N-Channel MOSFET (Metal Oxide) 600 V 35A (Tc) 10V 98mOhm @ 17.5A, 10V 5V @ 250µA 181 nC @ 10 V ±30V 6640 pF @ 25 V - 312.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH6N50D2

IXTH6N50D2

MOSFET N-CH 500V 6A TO247

IXYS
2,595 -

RFQ

IXTH6N50D2

Ficha técnica

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 500 V 6A (Tc) - 500mOhm @ 3A, 0V - 96 nC @ 5 V ±20V 2800 pF @ 25 V Depletion Mode 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTMFS5C673NLT1G

NTMFS5C673NLT1G

MOSFET N-CH 60V 5DFN

onsemi
3,336 -

RFQ

NTMFS5C673NLT1G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 9.2mOhm @ 25A, 10V 2V @ 35µA 9.5 nC @ 10 V ±20V 880 pF @ 25 V - 3.6W (Ta), 46W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFH15N100P

IXFH15N100P

MOSFET N-CH 1000V 15A TO247AD

IXYS
3,370 -

RFQ

IXFH15N100P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 15A (Tc) 10V 760mOhm @ 500mA, 10V 6.5V @ 1mA 97 nC @ 10 V ±30V 5140 pF @ 25 V - 543W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH60N60X3

IXFH60N60X3

MOSFET ULTRA JCT 600V 60A TO247

IXYS
3,501 -

RFQ

IXFH60N60X3

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 600 V 60A (Tc) 10V 51mOhm @ 30A, 10V 5V @ 4mA 51 nC @ 10 V ±20V 3450 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Through Hole
STW72N60DM2AG

STW72N60DM2AG

MOSFET N-CH 600V 66A TO247

STMicroelectronics
436 -

RFQ

STW72N60DM2AG

Ficha técnica

Tube Automotive, AEC-Q101, MDmesh™ DM2 Active N-Channel MOSFET (Metal Oxide) 600 V 66A (Tc) 10V 42mOhm @ 33A, 10V 5V @ 250µA 121 nC @ 10 V ±25V 5508 pF @ 100 V - 446W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA150N15X4

IXTA150N15X4

MOSFET N-CH 150V 150A TO263AA

IXYS
2,042 -

RFQ

IXTA150N15X4

Ficha técnica

Tube Ultra X4 Active N-Channel MOSFET (Metal Oxide) 150 V 150A (Tc) 10V 6.9mOhm @ 75A, 10V 4.5V @ 250µA 105 nC @ 10 V ±20V 5500 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPW60R070P6

IPW60R070P6

600V, 0.07OHM, N-CHANNEL MOSFET

Infineon Technologies
3,821 -

RFQ

IPW60R070P6

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 53.5A (Tc) 10V 70mOhm @ 20.6A, 10V 4.5V @ 1.72mA 100 nC @ 10 V ±20V 4750 pF @ 100 V - 391W (Tc) -55°C ~ 150°C (TJ)
IPW60R330P6

IPW60R330P6

IPW60R330 - 600V COOLMOS N-CHANN

Infineon Technologies
3,297 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
2N7002

2N7002

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
3,022 -

RFQ

2N7002

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 115mA (Tc) 5V, 10V 7.5Ohm @ 50mA, 5V - - ±20V 50 pF @ 25 V - 200mW (Tc) -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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