Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTX210P10T

IXTX210P10T

MOSFET P-CH 100V 210A PLUS247-3

IXYS
3,308 -

RFQ

IXTX210P10T

Ficha técnica

Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 100 V 210A (Tc) 10V 7.5mOhm @ 105A, 10V 4.5V @ 250µA 740 nC @ 10 V ±15V 69500 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCPF190N60

FCPF190N60

MOSFET N-CH 600V 20.2A TO220F

onsemi
845 -

RFQ

FCPF190N60

Ficha técnica

Tube SuperFET® II Active N-Channel MOSFET (Metal Oxide) 600 V 20.2A (Tc) 10V 199mOhm @ 10A, 10V 3.5V @ 250µA 74 nC @ 10 V ±20V 2950 pF @ 25 V - 39W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFN82N60P

IXFN82N60P

MOSFET N-CH 600V 72A SOT-227B

IXYS
3,521 -

RFQ

IXFN82N60P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 600 V 72A (Tc) 10V 75mOhm @ 41A, 10V 5V @ 8mA 240 nC @ 10 V ±30V 23000 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
NTH4L015N065SC1

NTH4L015N065SC1

SILICON CARBIDE MOSFET, NCHANNEL

onsemi
2,348 -

RFQ

NTH4L015N065SC1

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 650 V 142A (Tc) 15V, 18V 18mOhm @ 75A, 18V 4.3V @ 25mA 283 nC @ 18 V +22V, -8V 4790 pF @ 325 V - 500W (Tc) -55°C ~ 175°C (TJ) Through Hole
SCT3040KLGC11

SCT3040KLGC11

SICFET N-CH 1200V 55A TO247N

Rohm Semiconductor
1,350 -

RFQ

SCT3040KLGC11

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 55A (Tc) 18V 52mOhm @ 20A, 18V 5.6V @ 10mA 107 nC @ 18 V +22V, -4V 1337 pF @ 800 V - 262W (Tc) 175°C (TJ) Through Hole
MSC025SMA120B4

MSC025SMA120B4

TRANS SJT N-CH 1200V 103A TO247

Microchip Technology
2,025 -

RFQ

MSC025SMA120B4

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 103A (Tc) 20V 31mOhm @ 40A, 20V 2.8V @ 3mA 232 nC @ 20 V +23V, -10V 3020 pF @ 1000 V - 500W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFZ520N075T2

IXFZ520N075T2

MOSFET N-CH 75V 465A DE475

IXYS
2,675 -

RFQ

IXFZ520N075T2

Ficha técnica

Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 75 V 465A (Tc) 10V 1.3mOhm @ 100A, 10V 4V @ 8mA 545 nC @ 10 V ±20V 41000 pF @ 25 V - 600W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SCTW70N120G2V

SCTW70N120G2V

TRANS SJT N-CH 1200V 91A HIP247

STMicroelectronics
152 -

RFQ

SCTW70N120G2V

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 91A (Tc) 18V 30mOhm @ 50A, 18V 4.9V @ 1mA 150 nC @ 18 V +22V, -10V 3540 pF @ 800 V - 547W (Tc) -55°C ~ 200°C (TJ) Through Hole
IXFN56N90P

IXFN56N90P

MOSFET N-CH 900V 56A SOT-227B

IXYS
2,783 -

RFQ

IXFN56N90P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 900 V 56A (Tc) 10V 135mOhm @ 28A, 10V 6.5V @ 3mA 375 nC @ 10 V ±30V 23000 pF @ 25 V - 1000W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
G3R12MT12K

G3R12MT12K

1200V 12M TO-247-4 G3R SIC MOSFE

GeneSiC Semiconductor
3,772 -

RFQ

G3R12MT12K

Ficha técnica

Tube - Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 157A (Tc) 15V, 18V 13mOhm @ 100A, 18V 2.7V @ 50mA 288 nC @ 15 V +22V, -10V 9335 pF @ 800 V - 567W (Tc) -55°C ~ 175°C (TJ) Through Hole
MSC70SM120JCU2

MSC70SM120JCU2

SICFET N-CH 1.2KV 89A SOT227

Microchip Technology
2,335 -

RFQ

MSC70SM120JCU2

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 89A (Tc) 20V 31mOhm @ 40A, 20V 2.8V @ 1mA 232 nC @ 20 V +25V, -10V 3020 pF @ 1000 V - 395W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
GP2T080A120U

GP2T080A120U

SIC MOSFET 1200V 80M TO-247-3L

SemiQ
3,046 -

RFQ

GP2T080A120U

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 35A (Tc) 20V 100mOhm @ 20A, 20V 4V @ 10mA 58 nC @ 20 V +25V, -10V 1377 pF @ 1000 V - 188W (Tc) -55°C ~ 175°C (TJ) Through Hole
APT10021JFLL

APT10021JFLL

MOSFET N-CH 1000V 37A ISOTOP

Microchip Technology
2,663 -

RFQ

APT10021JFLL

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1000 V 37A (Tc) 10V 210mOhm @ 18.5A, 10V 5V @ 5mA 395 nC @ 10 V ±30V 9750 pF @ 25 V - 694W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
MSC130SM120JCU3

MSC130SM120JCU3

SICFET N-CH 1.2KV 173A SOT227

Microchip Technology
3,996 -

RFQ

MSC130SM120JCU3

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 173A (Tc) 20V 16mOhm @ 80A, 20V 2.8V @ 2mA 464 nC @ 20 V +25V, -10V 6040 pF @ 1000 V - 745W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
MSC130SM120JCU2

MSC130SM120JCU2

SICFET N-CH 1.2KV 173A SOT227

Microchip Technology
2,379 -

RFQ

MSC130SM120JCU2

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 173A (Tc) 20V 16mOhm @ 80A, 20V 2.8V @ 2mA 464 nC @ 20 V +25V, -10V 6040 pF @ 1000 V - 745W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT12040JVR

APT12040JVR

MOSFET N-CH 1200V 26A SOT227

Microchip Technology
2,185 -

RFQ

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 1200 V 26A (Tc) 10V 400mOhm @ 13A, 10V 4V @ 5mA 1200 nC @ 10 V ±30V 18000 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXTX5N250

IXTX5N250

MOSFET N-CH 2500V 5A PLUS247-3

IXYS
2,627 -

RFQ

IXTX5N250

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 2500 V 5A (Tc) 10V 8.8Ohm @ 2.5A, 10V 5V @ 1mA 200 nC @ 10 V ±30V 8560 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTMFS5C677NLT1G

NTMFS5C677NLT1G

POWER MOSFET, SINGLE N-CHANNEL

onsemi
2,325 -

RFQ

NTMFS5C677NLT1G

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 11A (Ta), 36A (Tc) 4.5V, 10V 15mOhm @ 10A, 10V 2V @ 25µA 9.7 nC @ 10 V ±20V 620 pF @ 25 V - 3.5W (Ta), 37W (Tc) -55°C ~ 175°C (TJ)
AUIRF6215

AUIRF6215

AUIRF6215 - 20V-150V P-CHANNEL A

Infineon Technologies
3,925 -

RFQ

AUIRF6215

Ficha técnica

Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 150 V 13A (Tc) 10V 290mOhm @ 6.6A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 860 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL3806PBF

IRFSL3806PBF

IRFSL3806 - 12V-300V N-CHANNEL P

Infineon Technologies
2,648 -

RFQ

IRFSL3806PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 43A (Tc) 10V 15.8mOhm @ 25A, 10V 4V @ 50µA 30 nC @ 10 V ±20V 1150 pF @ 50 V - 71W (Tc) -55°C ~ 175°C (TJ) Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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