Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPA65R1K0CEXKSA1

IPA65R1K0CEXKSA1

MOSFET N-CH 650V 7.2A TO220

Infineon Technologies
397 -

RFQ

IPA65R1K0CEXKSA1

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 7.2A (Tc) 10V 1Ohm @ 1.5A, 10V 3.5V @ 200µA 15.3 nC @ 10 V ±20V 328 pF @ 100 V Super Junction 68W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF530PBF-BE3

IRF530PBF-BE3

MOSFET N-CH 100V 14A TO220AB

Vishay Siliconix
943 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 14A (Tc) 10V 160mOhm @ 8.4A, 10V 4V @ 250µA 26 nC @ 10 V ±20V 670 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHP8N50D-GE3

SIHP8N50D-GE3

MOSFET N-CH 500V 8.7A TO220AB

Vishay Siliconix
296 -

RFQ

SIHP8N50D-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 8.7A (Tc) 10V 850mOhm @ 4A, 10V 5V @ 250µA 30 nC @ 10 V ±30V 527 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBC20PBF

IRFBC20PBF

MOSFET N-CH 600V 2.2A TO220AB

Vishay Siliconix
183 -

RFQ

IRFBC20PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 2.2A (Tc) 10V 4.4Ohm @ 1.3A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 350 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
CSD18512Q5BT

CSD18512Q5BT

MOSFET N-CH 40V 211A 8VSON

Texas Instruments
500 -

RFQ

CSD18512Q5BT

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) NexFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 211A (Tc) 4.5V, 10V 1.6mOhm @ 30A, 10V 2.2V @ 250µA 98 nC @ 10 V ±20V 7120 pF @ 20 V - 139W (Tc) -55°C ~ 150°C (TJ) Surface Mount
VN2450N3-G

VN2450N3-G

MOSFET N-CH 500V 200MA TO92-3

Microchip Technology
741 -

RFQ

VN2450N3-G

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 500 V 200mA (Tj) 4.5V, 10V 13Ohm @ 400mA, 10V 4V @ 1mA - ±20V 150 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
SIHP10N40D-GE3

SIHP10N40D-GE3

MOSFET N-CH 400V 10A TO220AB

Vishay Siliconix
136 -

RFQ

SIHP10N40D-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) 10V 600mOhm @ 5A, 10V 5V @ 250µA 30 nC @ 10 V ±30V 526 pF @ 100 V - 147W (Tc) -55°C ~ 150°C (TJ) Through Hole
VN0606L-G

VN0606L-G

MOSFET N-CH 60V 330MA TO92-3

Microchip Technology
143 -

RFQ

VN0606L-G

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 60 V 330mA (Tj) 10V 3Ohm @ 1A, 10V 2V @ 1mA - ±30V 50 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
DMNH10H028SCT

DMNH10H028SCT

MOSFET N-CH 100V 60A TO220AB

Diodes Incorporated
766 -

RFQ

DMNH10H028SCT

Ficha técnica

Tube Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 100 V 60A (Tc) 10V 28mOhm @ 20A, 10V 4V @ 250µA 31.9 nC @ 10 V ±20V 1942 pF @ 50 V - 2.8W (Ta) -55°C ~ 175°C (TJ) Through Hole
HUF75321P3

HUF75321P3

MOSFET N-CH 55V 35A TO220-3

onsemi
760 -

RFQ

HUF75321P3

Ficha técnica

Tube UltraFET™ Active N-Channel MOSFET (Metal Oxide) 55 V 35A (Tc) 10V 34mOhm @ 35A, 10V 4V @ 250µA 44 nC @ 20 V ±20V 680 pF @ 25 V - 93W (Tc) -55°C ~ 175°C (TJ) Through Hole
AOT10N60

AOT10N60

MOSFET N-CH 600V 10A TO220

Alpha & Omega Semiconductor Inc.
3,001 -

RFQ

AOT10N60

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 750mOhm @ 5A, 10V 4.5V @ 250µA 40 nC @ 10 V ±30V 1600 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF9Z10PBF

IRF9Z10PBF

MOSFET P-CH 60V 6.7A TO220AB

Vishay Siliconix
1,000 -

RFQ

IRF9Z10PBF

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 60 V 6.7A (Tc) 10V 500mOhm @ 4A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQP2N90

FQP2N90

MOSFET N-CH 900V 2.2A TO220-3

onsemi
360 -

RFQ

FQP2N90

Ficha técnica

Tube QFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 900 V 2.2A (Tc) 10V 7.2Ohm @ 1.1A, 10V 5V @ 250µA 15 nC @ 10 V ±30V 500 pF @ 25 V - 85W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP041N04NGXKSA1

IPP041N04NGXKSA1

MOSFET N-CH 40V 80A TO220-3

Infineon Technologies
297 -

RFQ

IPP041N04NGXKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 4.1mOhm @ 80A, 10V 4V @ 45µA 56 nC @ 10 V ±20V 4500 pF @ 20 V - 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
RCX200N20

RCX200N20

MOSFET N-CH 200V 20A TO220FM

Rohm Semiconductor
146 -

RFQ

RCX200N20

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 20A (Tc) 10V 130mOhm @ 10A, 10V 5V @ 1mA 40 nC @ 10 V ±30V 1900 pF @ 25 V - 2.23W (Ta), 40W (Tc) 150°C (TJ) Through Hole
FQPF5N60C

FQPF5N60C

MOSFET N-CH 600V 4.5A TO220F

onsemi
240 -

RFQ

FQPF5N60C

Ficha técnica

Tube QFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 600 V 4.5A (Tc) 10V 2.5Ohm @ 2.25A, 10V 4V @ 250µA 19 nC @ 10 V ±30V 670 pF @ 25 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
STU13N60M2

STU13N60M2

MOSFET N-CH 600V 11A IPAK

STMicroelectronics
931 -

RFQ

STU13N60M2

Ficha técnica

Tube MDmesh™ II Plus Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 380mOhm @ 5.5A, 10V 4V @ 250µA 17 nC @ 10 V ±25V 580 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDP8N50NZ

FDP8N50NZ

MOSFET N-CH 500V 8A TO220-3

onsemi
980 -

RFQ

FDP8N50NZ

Ficha técnica

Tube UniFET™ Last Time Buy N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4A, 10V 5V @ 250µA 18 nC @ 10 V ±25V 735 pF @ 25 V - 130W (Tc) -55°C ~ 150°C (TJ) Through Hole
AOTF12N60L

AOTF12N60L

MOSFET N-CH 600V 12A TO220F

Alpha & Omega Semiconductor Inc.
210 -

RFQ

AOTF12N60L

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 550mOhm @ 6A, 10V 4.5V @ 250µA 50 nC @ 10 V ±30V 2100 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW60R190P6

IPW60R190P6

MOSFET N-CH 600V 20.2A TO247

Infineon Technologies
3,129 -

RFQ

IPW60R190P6

Ficha técnica

Bulk CoolMOS™ P6 Active N-Channel MOSFET (Metal Oxide) 600 V 20.2A (Tc) - 190mOhm @ 7.6A, 10V 4.5V @ 630µA 37 nC @ 10 V ±20V 1750 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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