Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF3704ZSPBF

IRF3704ZSPBF

MOSFET N-CH 20V 67A D2PAK

International Rectifier
3,140 -

RFQ

Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 67A (Tc) 4.5V, 10V 7.9mOhm @ 21A, 10V 2.55V @ 250µA 13 nC @ 4.5 V ±20V 1220 pF @ 10 V - 57W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA80R1K4P7

IPA80R1K4P7

POWER FIELD-EFFECT TRANSISTOR

Infineon Technologies
2,312 -

RFQ

IPA80R1K4P7

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 800 V 4A (Tc) 10V 1.4Ohm @ 1.4A, 10V 3.5V @ 70µA 10 nC @ 10 V ±20V 250 pF @ 500 V - 24W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQP85N06

FQP85N06

POWER FIELD-EFFECT TRANSISTOR, 8

Fairchild Semiconductor
2,140 -

RFQ

FQP85N06

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 60 V 85A (Tc) 10V 10mOhm @ 42.5A, 10V 4V @ 250µA 112 nC @ 10 V ±25V 4120 pF @ 25 V - 160W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLI540NPBF

IRLI540NPBF

MOSFET N-CH 100V 23A TO220AB

International Rectifier
3,765 -

RFQ

IRLI540NPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 23A (Tc) 4V, 10V 44mOhm @ 12A, 10V 2V @ 250µA 74 nC @ 5 V ±16V 1800 pF @ 25 V - 54W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDP5800

FDP5800

POWER FIELD-EFFECT TRANSISTOR, 8

Fairchild Semiconductor
2,403 -

RFQ

FDP5800

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 14A (Ta), 80A (Tc) 4.5V, 10V 6mOhm @ 80A, 10V 2.5V @ 250µA 145 nC @ 10 V ±20V 9160 pF @ 15 V - 242W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLR3636PBF

IRLR3636PBF

IRLR3636 - 12V-300V N-CHANNEL PO

International Rectifier
2,722 -

RFQ

IRLR3636PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 6.8mOhm @ 50A, 10V 2.5V @ 100µA 49 nC @ 4.5 V ±16V 3779 pF @ 50 V - 143W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDD6296

FDD6296

MOSFET N-CH 30V 15A/50A DPAK

Fairchild Semiconductor
2,401 -

RFQ

FDD6296

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 15A (Ta), 50A (Tc) 4.5V, 10V 8.8mOhm @ 15A, 10V 3V @ 250µA 31.5 nC @ 10 V ±20V 1440 pF @ 15 V - 3.8W (Ta), 52W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFP350

IRFP350

MOSFET N-CH 400V 16A TO247-3

Harris Corporation
3,837 -

RFQ

IRFP350

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 16A (Tc) 10V 300mOhm @ 9.6A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 2600 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF7769L2TRPBF

IRF7769L2TRPBF

IRF7769 - 12V-300V N-CHANNEL POW

International Rectifier
3,981 -

RFQ

IRF7769L2TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 375A (Tc) 10V 3.5mOhm @ 74A, 10V 4V @ 250µA 300 nC @ 10 V ±20V 11560 pF @ 25 V - 3.3W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7759L2TRPBF

IRF7759L2TRPBF

IRF7759 - 12V-300V N-CHANNEL POW

International Rectifier
2,397 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 26A (Ta), 375A (Tc) 10V 2.3mOhm @ 96A, 10V 4V @ 250µA 300 nC @ 10 V ±20V 12222 pF @ 25 V - 3.3W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDFM2P110

FDFM2P110

MOSFET P-CH 20V 3.5A MICROFET

Fairchild Semiconductor
2,041 -

RFQ

FDFM2P110

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 3.5A (Ta) 2.5V, 4.5V 140mOhm @ 3.5A, 4.5V 1.5V @ 250µA 4 nC @ 4.5 V ±12V 280 pF @ 10 V Schottky Diode (Isolated) 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPD050N03L G

IPD050N03L G

OPTLMOS N-CHANNEL POWER MOSFET

Infineon Technologies
3,012 -

RFQ

IPD050N03L G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRFR220NPBF

IRFR220NPBF

IRFR220 - 12V-300V N-CHANNEL POW

International Rectifier
2,938 -

RFQ

IRFR220NPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 5A (Tc) 10V 600mOhm @ 2.9A, 10V 4V @ 250µA 23 nC @ 10 V ±20V 300 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS3607PBF

IRFS3607PBF

IRFS3607 - 12V-300V N-CHANNEL PO

International Rectifier
3,656 -

RFQ

IRFS3607PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 80A (Tc) 10V 9mOhm @ 46A, 10V 4V @ 100µA 84 nC @ 10 V ±20V 3070 pF @ 50 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS610BFP001

IRFS610BFP001

POWER FIELD-EFFECT TRANSISTOR, N

Fairchild Semiconductor
3,463 -

RFQ

IRFS610BFP001

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 3.3A (Tj) 10V 1.5Ohm @ 1.65A, 10V 4V @ 250µA 9.3 nC @ 10 V ±30V 225 pF @ 25 V - 22W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU7546PBF

IRFU7546PBF

IRFU7546 - 12V-300V N-CHANNEL PO

International Rectifier
2,348 -

RFQ

IRFU7546PBF

Ficha técnica

Bulk HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 56A (Tc) 6V, 10V 7.9mOhm @ 43A, 10V 3.7V @ 100µA 87 nC @ 10 V ±20V 3020 pF @ 25 V - 99W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLML2402GTRPBF

IRLML2402GTRPBF

MOSFET N-CH 20V 1.2A SOT23

International Rectifier
3,353 -

RFQ

IRLML2402GTRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 20 V 1.2A (Ta) 2.7V, 4.5V 250mOhm @ 930mA, 4.5V 700mV @ 250µA (Min) 3.9 nC @ 4.5 V ±12V 110 pF @ 15 V - 540mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLR024NPBF

IRLR024NPBF

MOSFET N-CH 55V 17A DPAK

International Rectifier
3,718 -

RFQ

IRLR024NPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 17A (Tc) 4V, 10V 65mOhm @ 10A, 10V 2V @ 250µA 15 nC @ 5 V ±16V 480 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS3306TRL

AUIRFS3306TRL

AUIRFS3306 - 55V-60V N-CHANNEL A

International Rectifier
2,534 -

RFQ

AUIRFS3306TRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 4.2mOhm @ 75A, 10V 4V @ 150µA 125 nC @ 10 V ±20V 4520 pF @ 50 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSZ22DN20NS3G

BSZ22DN20NS3G

BSZ22DN20 - 12V-300V N-CHANNEL P

Infineon Technologies
3,513 -

RFQ

BSZ22DN20NS3G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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