Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AUIRLR3705Z

AUIRLR3705Z

AUIRLR3705 - 55V-60V N-CHANNEL A

Infineon Technologies
3,467 -

RFQ

AUIRLR3705Z

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 4.5V, 10V 8mOhm @ 42A, 10V 3V @ 250µA 66 nC @ 5 V ±16V 2900 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Surface Mount
MCH3479-TL-H

MCH3479-TL-H

SINGLE N-CHANNEL POWER MOSFET 20

onsemi
3,389 -

RFQ

MCH3479-TL-H

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 20 V 3.5A (Ta) 1.8V, 4.5V 64mOhm @ 1.5A, 4.5V - 2.8 nC @ 4.5 V ±12V 260 pF @ 10 V - 900mW (Ta) 150°C (TJ) Surface Mount
KLI-2113-AAB-ED-AA

KLI-2113-AAB-ED-AA

N-CHANNEL POWER MOSFET 100 V, 8

onsemi
2,545 -

RFQ

KLI-2113-AAB-ED-AA

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BUK9237-55A/C1,118

BUK9237-55A/C1,118

N-CHANNEL TRENCHMOS LOGIC LEVEL

Nexperia USA Inc.
2,557 -

RFQ

BUK9237-55A/C1,118

Ficha técnica

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 32A (Tc) 4.5V, 10V 33mOhm @ 15A, 10V 2V @ 1mA 17.6 nC @ 5 V ±15V 1236 pF @ 25 V - 77W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDMA8878

FDMA8878

SINGLE N-CHANNEL POWER TRENCH MO

onsemi
3,150 -

RFQ

FDMA8878

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 9A (Ta), 10A (Tc) 4.5V, 10V 16mOhm @ 9A, 10V 3V @ 250µA 12 nC @ 10 V ±20V 720 pF @ 15 V - 2.4W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFU9024NPBF

IRFU9024NPBF

IRFU9024N - 55V SINGLE P-CHANNEL

International Rectifier
2,081 -

RFQ

Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 55 V 11A (Tc) 10V 175mOhm @ 6.6A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 350 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF7821TRPBF-1

IRF7821TRPBF-1

IRF7821 - 30V SINGLE N-CHANNEL H

Infineon Technologies
2,953 -

RFQ

IRF7821TRPBF-1

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 13.6A (Ta) 4.5V, 10V 9.1mOhm @ 13A, 10V 1V @ 250µA 14 nC @ 4.5 V ±20V 1010 pF @ 15 V - 2.5W (Ta) -55°C ~ 155°C (TJ) Surface Mount
CPH6354-TL-H

CPH6354-TL-H

CPH6354 - MOSFET P-CHANNEL SINGL

onsemi
2,523 -

RFQ

CPH6354-TL-H

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 60 V 4A (Ta) 4V, 10V 100mOhm @ 2A, 10V - 14 nC @ 10 V ±20V 600 pF @ 20 V - 1.6W (Ta) 150°C (TJ) Surface Mount
FDD2572-F085

FDD2572-F085

N-CHANNEL POWERTRENCH MOSFET, 15

onsemi
3,754 -

RFQ

FDD2572-F085

Ficha técnica

Bulk Automotive, AEC-Q101, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 150 V 4A (Ta), 29A (Tc) 6V, 10V 54mOhm @ 9A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 1770 pF @ 25 V - 135W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDBL0110N60

FDBL0110N60

FDBL0110N60 - N-CHANNEL POWERTRE

onsemi
3,202 -

RFQ

FDBL0110N60

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 300A (Tc) 10V 1.1mOhm @ 80A, 10V 4V @ 250µA 220 nC @ 10 V ±20V 13650 pF @ 30 V - 429W (Tj) -55°C ~ 175°C (TJ) Surface Mount
CPH3455-TL-H

CPH3455-TL-H

SMALL SIGNAL FIELD-EFFECT TRANSI

onsemi
2,747 -

RFQ

CPH3455-TL-H

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 35 V 3A (Ta) 4V, 10V 104mOhm @ 1.5A, 10V - 4 nC @ 10 V ±20V 186 pF @ 20 V - 1W (Ta) 150°C (TJ) Surface Mount
AUIRF2804STRL7P

AUIRF2804STRL7P

AUIRF2804 - 20V-40V N-CHANNEL AU

Infineon Technologies
2,128 -

RFQ

AUIRF2804STRL7P

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 1.6mOhm @ 160A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 6930 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFB42N20DPBF

IRFB42N20DPBF

IRFB42N20 - 12V-300V N-CHANNEL P

Infineon Technologies
2,400 -

RFQ

IRFB42N20DPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 44A (Tc) 10V 55mOhm @ 26A, 10V 5.5V @ 250µA 140 nC @ 10 V ±30V 3430 pF @ 25 V - 2.4W (Ta), 330W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRF3805S-7P

AUIRF3805S-7P

AUIRF3805 - 55V-60V N-CHANNEL AU

Infineon Technologies
3,616 -

RFQ

AUIRF3805S-7P

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 160A (Tc) 10V 2.6mOhm @ 140A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 7820 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDC638APZ-SBMS001

FDC638APZ-SBMS001

LV FET / WBG

onsemi
2,880 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IRLU9343PBF

IRLU9343PBF

IRLU9343 - 20V-250V P-CHANNEL PO

Infineon Technologies
3,552 -

RFQ

IRLU9343PBF

Ficha técnica

Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 55 V 20A (Tc) - 105mOhm @ 3.4A, 10V 1V @ 250µA 47 nC @ 10 V ±20V 660 pF @ 50 V - 79W (Tc) -40°C ~ 175°C (TJ) Through Hole
PMPB10XNEAX

PMPB10XNEAX

PMPB10XNEA - 20 V, N-CHANNEL TRE

Nexperia USA Inc.
3,120 -

RFQ

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 20 V 9A (Ta) 1.8V, 4.5V 14mOhm @ 9A, 4.5V 0.9V @ 250µA 34 nC @ 4.5 V ±12V 2175 pF @ 10 V - 1.7W (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDMC010N08LC

FDMC010N08LC

N-CHANNEL SHIELDED GATE POWERTRE

onsemi
2,942 -

RFQ

FDMC010N08LC

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 80 V 11A (Ta), 50A (Tc) 4.5V, 10V 10.9mOhm @ 16A, 10V 3V @ 90µA 31 nC @ 10 V ±20V 2135 pF @ 40 V - 2.3W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NVGS4111PT1G

NVGS4111PT1G

NVGS4111 - SINGLE P-CHANNEL POWE

onsemi
3,352 -

RFQ

NVGS4111PT1G

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 30 V 3.7A (Ta) 4.5V, 10V 60mOhm @ 3.7A, 10V 3V @ 250µA 32 nC @ 10 V ±20V 750 pF @ 15 V - 630mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7488TRPBF

IRF7488TRPBF

IRF7488 - 12V-300V N-CHANNEL POW

Infineon Technologies
3,932 -

RFQ

IRF7488TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 80 V 6.3A (Ta) 10V 29mOhm @ 3.8A, 10V 4V @ 250µA 57 nC @ 10 V ±20V 1680 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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