Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
NDB603AL

NDB603AL

MOSFET N-CH 30V 25A D2PAK

onsemi
2,259 -

RFQ

NDB603AL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 25A (Tc) 4.5V, 10V 22mOhm @ 25A, 10V 3V @ 250µA 40 nC @ 10 V ±20V 1100 pF @ 15 V - 50W (Tc) -65°C ~ 175°C (TJ) Surface Mount
NDB6060

NDB6060

MOSFET N-CH 60V 48A D2PAK

onsemi
2,956 -

RFQ

NDB6060

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 48A (Tc) 10V 25mOhm @ 24A, 10V 4V @ 250µA 70 nC @ 10 V ±20V 1800 pF @ 25 V - 100W (Tc) -65°C ~ 175°C (TJ) Surface Mount
NDB7050

NDB7050

MOSFET N-CH 50V 75A D2PAK

onsemi
2,003 -

RFQ

NDB7050

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 50 V 75A (Tc) - 13mOhm @ 40A, 10V 4V @ 250µA 115 nC @ 10 V - 3600 pF @ 25 V - - - Surface Mount
NDB7050L

NDB7050L

MOSFET N-CH 50V 75A D2PAK

onsemi
3,146 -

RFQ

NDB7050L

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 50 V 75A (Tc) - 15mOhm @ 37.5A, 5V 2V @ 250µA 115 nC @ 5 V - 4000 pF @ 25 V - - - Surface Mount
NDB7060

NDB7060

MOSFET N-CH 60V 75A D2PAK

onsemi
3,722 -

RFQ

NDB7060

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 10V 13mOhm @ 40A, 10V 4V @ 250µA 115 nC @ 10 V ±20V 3600 pF @ 25 V - 150W (Tc) -65°C ~ 175°C (TJ) Surface Mount
NDB7060L

NDB7060L

MOSFET N-CH 60V 75A D2PAK

onsemi
3,172 -

RFQ

NDB7060L

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) - 15mOhm @ 37.5A, 5V 2V @ 250µA 115 nC @ 5 V - 4000 pF @ 25 V - - - Surface Mount
94-2310

94-2310

MOSFET N-CH 100V 17A D2PAK

Infineon Technologies
2,695 -

RFQ

94-2310

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 17A (Tc) 4V, 10V 100mOhm @ 9A, 10V 2V @ 250µA 34 nC @ 5 V ±20V 800 pF @ 25 V - 3.8W (Ta), 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF9Z14

IRF9Z14

MOSFET P-CH 60V 6.7A TO220AB

Vishay Siliconix
3,959 -

RFQ

IRF9Z14

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 60 V 6.7A (Tc) 10V 500mOhm @ 4A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFN73N30

IXFN73N30

MOSFET N-CH 300V 73A SOT-227B

IXYS
3,711 -

RFQ

IXFN73N30

Ficha técnica

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 300 V 73A (Tc) 10V 45mOhm @ 500mA, 10V 4V @ 8mA 360 nC @ 10 V ±20V 9000 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IRF3315

IRF3315

MOSFET N-CH 150V 27A TO220AB

Infineon Technologies
2,675 -

RFQ

IRF3315

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 27A (Tc) 10V 70mOhm @ 12A, 10V 4V @ 250µA 95 nC @ 10 V ±20V 1300 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFI1310N

IRFI1310N

MOSFET N-CH 100V 24A TO220AB FP

Infineon Technologies
2,245 -

RFQ

IRFI1310N

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 24A (Tc) 10V 36mOhm @ 13A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 1900 pF @ 25 V - 56W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFI520N

IRFI520N

MOSFET N-CH 100V 7.6A TO220AB FP

Infineon Technologies
3,197 -

RFQ

IRFI520N

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 7.6A (Tc) 10V 200mOhm @ 4.3A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 330 pF @ 25 V - 30W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFI530N

IRFI530N

MOSFET N-CH 100V 12A TO220AB FP

Infineon Technologies
3,251 -

RFQ

IRFI530N

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 12A (Tc) 10V 110mOhm @ 6.6A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 640 pF @ 25 V - 41W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFIZ24E

IRFIZ24E

MOSFET N-CH 60V 14A TO220AB FP

Infineon Technologies
2,662 -

RFQ

IRFIZ24E

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 14A (Tc) 10V 71mOhm @ 7.8A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 370 pF @ 25 V - 29W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFIZ34E

IRFIZ34E

MOSFET N-CH 60V 21A TO220AB FP

Infineon Technologies
3,560 -

RFQ

IRFIZ34E

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 21A (Tc) 10V 42mOhm @ 11A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 700 pF @ 25 V - 37W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFIZ46N

IRFIZ46N

MOSFET N-CH 55V 33A TO220AB FP

Infineon Technologies
3,814 -

RFQ

IRFIZ46N

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 33A (Tc) 10V 20mOhm @ 19A, 10V 4V @ 250µA 61 nC @ 10 V ±20V 1500 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFIZ48N

IRFIZ48N

MOSFET N-CH 55V 36A TO220AB FP

Infineon Technologies
2,388 -

RFQ

IRFIZ48N

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 36A (Tc) 10V 16mOhm @ 22A, 10V 4V @ 250µA 89 nC @ 10 V ±20V 1900 pF @ 25 V - 42W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ34E

IRFZ34E

MOSFET N-CH 60V 28A TO220AB

Infineon Technologies
2,497 -

RFQ

IRFZ34E

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 28A (Tc) 10V 42mOhm @ 17A, 10V 4V @ 250µA 30 nC @ 10 V ±20V 680 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ44E

IRFZ44E

MOSFET N-CH 60V 48A TO220AB

Infineon Technologies
3,323 -

RFQ

IRFZ44E

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 48A (Tc) 10V 23mOhm @ 29A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1360 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3103D1

IRL3103D1

MOSFET N-CH 30V 64A TO220AB

Infineon Technologies
3,122 -

RFQ

IRL3103D1

Ficha técnica

Tube FETKY™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 64A (Tc) 4.5V, 10V 14mOhm @ 34A, 10V 1V @ 250µA 43 nC @ 4.5 V ±16V 1900 pF @ 25 V - 2W (Ta), 89W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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