Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFX55N50

IXFX55N50

MOSFET N-CH 500V 55A PLUS247-3

IXYS
2,090 -

RFQ

IXFX55N50

Ficha técnica

Tube HiPerFET™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 55A (Tc) 10V 80mOhm @ 500mA, 10V 4.5V @ 8mA 330 nC @ 10 V ±20V 9400 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRL3502S

IRL3502S

MOSFET N-CH 20V 110A D2PAK

Infineon Technologies
3,688 -

RFQ

IRL3502S

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 110A (Tc) 4.5V, 7V 7mOhm @ 64A, 7V 700mV @ 250µA (Min) 110 nC @ 4.5 V ±10V 4700 pF @ 15 V - 140W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRL5602S

IRL5602S

MOSFET P-CH 20V 24A D2PAK

Infineon Technologies
2,172 -

RFQ

IRL5602S

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 24A (Tc) 2.5V, 4.5V 42mOhm @ 12A, 4.5V 1V @ 250µA 44 nC @ 4.5 V ±8V 1460 pF @ 15 V - 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDP6030L

FDP6030L

MOSFET N-CH 30V 48A TO220-3

onsemi
3,794 -

RFQ

FDP6030L

Ficha técnica

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 48A (Ta) 4.5V, 10V 13mOhm @ 26A, 10V 3V @ 250µA 18 nC @ 5 V ±20V 1250 pF @ 15 V - 52W (Tc) -65°C ~ 175°C (TJ) Through Hole
94-4007

94-4007

MOSFET N-CH 30V 35A DPAK

Infineon Technologies
2,456 -

RFQ

94-4007

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 35A (Tc) 4.5V, 10V 31mOhm @ 21A, 10V 1V @ 250µA 26 nC @ 4.5 V ±16V 870 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7403TR

IRF7403TR

MOSFET N-CH 30V 8.5A 8SO

Infineon Technologies
2,899 -

RFQ

IRF7403TR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.5A (Ta) 4.5V, 10V 22mOhm @ 4A, 10V 1V @ 250µA 57 nC @ 10 V ±20V 1200 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLU3103

IRLU3103

MOSFET N-CH 30V 55A I-PAK

Infineon Technologies
3,124 -

RFQ

IRLU3103

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 55A (Tc) 4.5V, 10V 19mOhm @ 33A, 10V 1V @ 250µA 50 nC @ 4.5 V ±16V 1600 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFI740G

IRFI740G

MOSFET N-CH 400V 5.4A TO220-3

Vishay Siliconix
2,924 -

RFQ

IRFI740G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 5.4A (Tc) 10V 550mOhm @ 3.2A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 1370 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLU2905

IRLU2905

MOSFET N-CH 55V 42A I-PAK

Infineon Technologies
3,249 -

RFQ

IRLU2905

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 4V, 10V 27mOhm @ 25A, 10V 2V @ 250µA 48 nC @ 5 V ±16V 1700 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
2N7002W-7

2N7002W-7

MOSFET N-CH 60V 115MA SOT-323

Diodes Incorporated
3,473 -

RFQ

2N7002W-7

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 115mA (Ta) 5V, 10V 7.5Ohm @ 50mA, 5V 2V @ 250µA - ±20V 50 pF @ 25 V - 200mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IXTH5N100A

IXTH5N100A

MOSFET N-CH 1000V 5A TO247

IXYS
3,619 -

RFQ

IXTH5N100A

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 1000 V 5A (Tc) 10V 2Ohm @ 2.5A, 10V 4.5V @ 250µA 130 nC @ 10 V ±20V 2600 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
94-4796

94-4796

MOSFET N-CH 55V 85A D2PAK

Infineon Technologies
3,674 -

RFQ

94-4796

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 85A (Tc) 10V 11mOhm @ 43A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 3210 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3515S

IRF3515S

MOSFET N-CH 150V 41A D2PAK

Infineon Technologies
3,514 -

RFQ

IRF3515S

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 41A (Tc) 10V 45mOhm @ 25A, 10V 4.5V @ 250µA 107 nC @ 10 V ±30V 2260 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3710STRR

IRF3710STRR

MOSFET N-CH 100V 57A D2PAK

Infineon Technologies
2,546 -

RFQ

IRF3710STRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 57A (Tc) 10V 23mOhm @ 28A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 3130 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF510S

IRF510S

MOSFET N-CH 100V 5.6A D2PAK

Vishay Siliconix
2,189 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 5.6A (Tc) 10V 540mOhm @ 3.4A, 10V 4V @ 250µA 8.3 nC @ 10 V ±20V 180 pF @ 25 V - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF520NS

IRF520NS

MOSFET N-CH 100V 9.7A D2PAK

Infineon Technologies
3,307 -

RFQ

IRF520NS

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 9.7A (Tc) 10V 200mOhm @ 5.7A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 330 pF @ 25 V - 3.8W (Ta), 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF5210STRR

IRF5210STRR

MOSFET P-CH 100V 40A D2PAK

Infineon Technologies
3,968 -

RFQ

IRF5210STRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 100 V 40A (Tc) 10V 60mOhm @ 24A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 2700 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
94-4582

94-4582

MOSFET P-CH 55V 31A D2PAK

Infineon Technologies
3,919 -

RFQ

94-4582

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 55 V 31A (Tc) 10V 60mOhm @ 16A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1200 pF @ 25 V - 3.8W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF530NS

IRF530NS

MOSFET N-CH 100V 17A D2PAK

Infineon Technologies
3,689 -

RFQ

IRF530NS

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 17A (Tc) 10V 90mOhm @ 9A, 10V 4V @ 250µA 37 nC @ 10 V ±20V 920 pF @ 25 V - 3.8W (Ta), 70W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF530S

IRF530S

MOSFET N-CH 100V 14A D2PAK

Vishay Siliconix
2,689 -

RFQ

IRF530S

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 14A (Tc) 10V 160mOhm @ 8.4A, 10V 4V @ 250µA 26 nC @ 10 V ±20V 670 pF @ 25 V - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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