Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF9610S

IRF9610S

MOSFET P-CH 200V 1.8A D2PAK

Vishay Siliconix
3,613 -

RFQ

IRF9610S

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 200 V 1.8A (Tc) 10V 3Ohm @ 900mA, 10V 4V @ 250µA 11 nC @ 10 V ±20V 170 pF @ 25 V - 3W (Ta), 20W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF9620S

IRF9620S

MOSFET P-CH 200V 3.5A D2PAK

Vishay Siliconix
2,848 -

RFQ

IRF9620S

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 200 V 3.5A (Tc) 10V 1.5Ohm @ 1.5A, 10V 4V @ 250µA 22 nC @ 10 V ±20V 350 pF @ 25 V - 3W (Ta), 40W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF9630S

IRF9630S

MOSFET P-CH 200V 6.5A D2PAK

Vishay Siliconix
3,400 -

RFQ

IRF9630S

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 200 V 6.5A (Tc) 10V 800mOhm @ 3.9A, 10V 4V @ 250µA 29 nC @ 10 V ±20V 700 pF @ 25 V - 3W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF644

IRF644

MOSFET N-CH 250V 14A TO220AB

Vishay Siliconix
2,455 -

RFQ

IRF644

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 14A (Tc) 10V 280mOhm @ 8.4A, 10V 4V @ 250µA 68 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF644STRL

IRF644STRL

MOSFET N-CH 250V 14A D2PAK

Vishay Siliconix
2,075 -

RFQ

IRF644STRL

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 14A (Tc) 10V 280mOhm @ 8.4A, 10V 4V @ 250µA 68 nC @ 10 V ±20V 1300 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF7201TR

IRF7201TR

MOSFET N-CH 30V 7.3A 8SO

Infineon Technologies
3,012 -

RFQ

IRF7201TR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 7.3A (Tc) 4.5V, 10V 30mOhm @ 7.3A, 10V 1V @ 250µA 28 nC @ 10 V ±20V 550 pF @ 25 V - 2.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF7220

IRF7220

MOSFET P-CH 14V 11A 8SO

Infineon Technologies
2,833 -

RFQ

IRF7220

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 14 V 11A (Ta) 2.5V, 4.5V 12mOhm @ 11A, 4.5V 600mV @ 250µA (Min) 125 nC @ 5 V ±12V 8075 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF730A

IRF730A

MOSFET N-CH 400V 5.5A TO220AB

Vishay Siliconix
3,130 -

RFQ

IRF730A

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 5.5A (Tc) 10V 1Ohm @ 3.3A, 10V 4.5V @ 250µA 22 nC @ 10 V ±30V 600 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF730AS

IRF730AS

MOSFET N-CH 400V 5.5A D2PAK

Vishay Siliconix
3,151 -

RFQ

IRF730AS

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 5.5A (Tc) 10V 1Ohm @ 3.3A, 10V 4.5V @ 250µA 22 nC @ 10 V ±30V 600 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF7321D2

IRF7321D2

MOSFET P-CH 30V 4.7A 8SO

Infineon Technologies
2,366 -

RFQ

IRF7321D2

Ficha técnica

Tube FETKY™ Obsolete P-Channel MOSFET (Metal Oxide) 30 V 4.7A (Ta) 4.5V, 10V 62mOhm @ 4.9A, 10V 1V @ 250µA 34 nC @ 10 V ±20V 710 pF @ 25 V Schottky Diode (Isolated) 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7321D2TR

IRF7321D2TR

MOSFET P-CH 30V 4.7A 8SO

Infineon Technologies
2,378 -

RFQ

IRF7321D2TR

Ficha técnica

Tape & Reel (TR) FETKY™ Obsolete P-Channel MOSFET (Metal Oxide) 30 V 4.7A (Ta) 4.5V, 10V 62mOhm @ 4.9A, 10V 1V @ 250µA 34 nC @ 10 V ±20V 710 pF @ 25 V Schottky Diode (Isolated) 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7324D1

IRF7324D1

MOSFET P-CH 20V 2.2A 8SO

Infineon Technologies
2,792 -

RFQ

IRF7324D1

Ficha técnica

Tube FETKY™ Obsolete P-Channel MOSFET (Metal Oxide) 20 V 2.2A (Ta) 2.7V, 4.5V 270mOhm @ 1.2A, 4.5V 700mV @ 250µA (Min) 7.8 nC @ 4.5 V ±12V 260 pF @ 15 V Schottky Diode (Isolated) 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7326D2TR

IRF7326D2TR

MOSFET P-CH 30V 3.6A 8SO

Infineon Technologies
2,826 -

RFQ

IRF7326D2TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) FETKY™ Obsolete P-Channel MOSFET (Metal Oxide) 30 V 3.6A (Ta) 4.5V, 10V 100mOhm @ 1.8A, 10V 1V @ 250µA 25 nC @ 10 V ±20V 440 pF @ 25 V Schottky Diode (Isolated) 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF734

IRF734

MOSFET N-CH 450V 4.9A TO220AB

Vishay Siliconix
3,752 -

RFQ

IRF734

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 450 V 4.9A (Tc) 10V 1.2Ohm @ 2.9A, 10V 4V @ 250µA 45 nC @ 10 V ±20V 680 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF7353D1

IRF7353D1

MOSFET N-CH 30V 6.5A 8SO

Infineon Technologies
2,285 -

RFQ

IRF7353D1

Ficha técnica

Tube FETKY™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 6.5A (Ta) 4.5V, 10V 32mOhm @ 5.8A, 10V 1V @ 250µA 33 nC @ 10 V ±20V 650 pF @ 25 V Schottky Diode (Isolated) 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7353D1TR

IRF7353D1TR

MOSFET N-CH 30V 6.5A 8SO

Infineon Technologies
2,166 -

RFQ

IRF7353D1TR

Ficha técnica

Tape & Reel (TR) FETKY™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 6.5A (Ta) 4.5V, 10V 32mOhm @ 5.8A, 10V 1V @ 250µA 33 nC @ 10 V ±20V 650 pF @ 25 V Schottky Diode (Isolated) 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF740A

IRF740A

MOSFET N-CH 400V 10A TO220AB

Vishay Siliconix
3,976 -

RFQ

IRF740A

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) 10V 550mOhm @ 6A, 10V 4V @ 250µA 36 nC @ 10 V ±30V 1030 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF740AS

IRF740AS

MOSFET N-CH 400V 10A D2PAK

Vishay Siliconix
3,382 -

RFQ

IRF740AS

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) 10V 550mOhm @ 6A, 10V 4V @ 250µA 36 nC @ 10 V ±30V 1030 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF740STRL

IRF740STRL

MOSFET N-CH 400V 10A D2PAK

Vishay Siliconix
2,981 -

RFQ

IRF740STRL

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) 10V 550mOhm @ 6A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1400 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF744

IRF744

MOSFET N-CH 450V 8.8A TO220AB

Vishay Siliconix
2,758 -

RFQ

IRF744

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 450 V 8.8A (Tc) 10V 630mOhm @ 5.3A, 10V 4V @ 250µA 80 nC @ 10 V ±20V 1400 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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