Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF530STRR

IRF530STRR

MOSFET N-CH 100V 14A D2PAK

Vishay Siliconix
2,379 -

RFQ

IRF530STRR

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 14A (Tc) 10V 160mOhm @ 8.4A, 10V 4V @ 250µA 26 nC @ 10 V ±20V 670 pF @ 25 V - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF540

IRF540

MOSFET N-CH 100V 28A TO220AB

Vishay Siliconix
3,828 -

RFQ

IRF540

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 28A (Tc) 10V 77mOhm @ 17A, 10V 4V @ 250µA 72 nC @ 10 V ±20V 1700 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF540S

IRF540S

MOSFET N-CH 100V 28A D2PAK

Vishay Siliconix
2,002 -

RFQ

IRF540S

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 28A (Tc) 10V 77mOhm @ 17A, 10V 4V @ 250µA 72 nC @ 10 V ±20V 1700 pF @ 25 V - 3.7W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF540STRL

IRF540STRL

MOSFET N-CH 100V 28A D2PAK

Vishay Siliconix
2,525 -

RFQ

IRF540STRL

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 28A (Tc) 10V 77mOhm @ 17A, 10V 4V @ 250µA 72 nC @ 10 V ±20V 1700 pF @ 25 V - 3.7W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF540STRR

IRF540STRR

MOSFET N-CH 100V 28A D2PAK

Vishay Siliconix
2,620 -

RFQ

IRF540STRR

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 28A (Tc) 10V 77mOhm @ 17A, 10V 4V @ 250µA 72 nC @ 10 V ±20V 1700 pF @ 25 V - 3.7W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF610S

IRF610S

MOSFET N-CH 200V 3.3A D2PAK

Vishay Siliconix
3,524 -

RFQ

IRF610S

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 3.3A (Tc) 10V 1.5Ohm @ 2A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 3W (Ta), 36W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF614

IRF614

MOSFET N-CH 250V 2.7A TO220AB

Vishay Siliconix
3,762 -

RFQ

IRF614

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 2.7A (Tc) 10V 2Ohm @ 1.6A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF620S

IRF620S

MOSFET N-CH 200V 5.2A D2PAK

Vishay Siliconix
2,235 -

RFQ

IRF620S

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 5.2A (Tc) 10V 800mOhm @ 3.1A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 3W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF6215S

IRF6215S

MOSFET P-CH 150V 13A D2PAK

Infineon Technologies
3,892 -

RFQ

IRF6215S

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 150 V 13A (Tc) 10V 290mOhm @ 6.6A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 860 pF @ 25 V - 3.8W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6215STRR

IRF6215STRR

MOSFET P-CH 150V 13A D2PAK

Infineon Technologies
2,755 -

RFQ

IRF6215STRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 150 V 13A (Tc) 10V 290mOhm @ 6.6A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 860 pF @ 25 V - 3.8W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF624

IRF624

MOSFET N-CH 250V 4.4A TO220AB

Vishay Siliconix
2,100 -

RFQ

IRF624

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 4.4A (Tc) 10V 1.1Ohm @ 2.6A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF630NS

IRF630NS

MOSFET N-CH 200V 9.3A D2PAK

Infineon Technologies
2,233 -

RFQ

IRF630NS

Ficha técnica

Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9.3A (Tc) 10V 300mOhm @ 5.4A, 10V 4V @ 250µA 35 nC @ 10 V ±20V 575 pF @ 25 V - 82W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF630S

IRF630S

MOSFET N-CH 200V 9A D2PAK

Vishay Siliconix
2,864 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9A (Tc) 10V 400mOhm @ 5.4A, 10V 4V @ 250µA 43 nC @ 10 V ±20V 800 pF @ 25 V - 3W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
64-0007

64-0007

MOSFET N-CH 200V 18A TO220AB

Infineon Technologies
3,622 -

RFQ

64-0007

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 150mOhm @ 11A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 1160 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF640S

IRF640S

MOSFET N-CH 200V 18A D2PAK

Vishay Siliconix
3,519 -

RFQ

IRF640S

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 70 nC @ 10 V ±20V 1300 pF @ 25 V - 3.1W (Ta), 130W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF840AS

IRF840AS

MOSFET N-CH 500V 8A D2PAK

Vishay Siliconix
2,727 -

RFQ

IRF840AS

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 38 nC @ 10 V ±30V 1018 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF840L

IRF840L

MOSFET N-CH 500V 8A I2PAK

Vishay Siliconix
3,078 -

RFQ

IRF840L

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF840LC

IRF840LC

MOSFET N-CH 500V 8A TO220AB

Vishay Siliconix
3,208 -

RFQ

IRF840LC

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF9410

IRF9410

MOSFET N-CH 30V 7A 8SO

Infineon Technologies
2,806 -

RFQ

IRF9410

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 7A (Ta) 4.5V, 10V 30mOhm @ 7A, 10V 1V @ 250µA 27 nC @ 10 V ±20V 550 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF9540STRL

IRF9540STRL

MOSFET P-CH 100V 19A D2PAK

Vishay Siliconix
2,406 -

RFQ

IRF9540STRL

Ficha técnica

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 100 V 19A (Tc) 10V 200mOhm @ 11A, 10V 4V @ 250µA 61 nC @ 10 V ±20V 1400 pF @ 25 V - 3.7W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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