Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
RQ1C075UNTR

RQ1C075UNTR

MOSFET N-CH 20V 7.5A TSMT8

Rohm Semiconductor
3,787 -

RFQ

RQ1C075UNTR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 7.5A (Ta) 1.5V, 4.5V 16mOhm @ 7.5A, 4.5V 1V @ 1mA 18 nC @ 4.5 V ±10V 1400 pF @ 10 V - 700mW (Ta) 150°C (TJ) Surface Mount
RAL045P01TCR

RAL045P01TCR

MOSFET P-CH 12V 4.5A TUMT6

Rohm Semiconductor
2,029 -

RFQ

RAL045P01TCR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 12 V 4.5A (Ta) 1.5V, 4.5V 30mOhm @ 4.5A, 4.5V 1V @ 1mA 40 nC @ 4.5 V -8V 4200 pF @ 6 V - 1W (Ta) 150°C (TJ) Surface Mount
QS5U21TR

QS5U21TR

MOSFET P-CH 20V 1.5A TSMT5

Rohm Semiconductor
2,053 -

RFQ

QS5U21TR

Ficha técnica

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 20 V 1.5A (Ta) 2.5V, 4.5V 200mOhm @ 1.5A, 4.5V 2V @ 1mA 4.2 nC @ 4.5 V ±12V 325 pF @ 10 V Schottky Diode (Isolated) 1.25W (Ta) 150°C (TJ) Surface Mount
R6002ENDTL

R6002ENDTL

MOSFET N-CH 600V 1.7A CPT3

Rohm Semiconductor
3,113 -

RFQ

R6002ENDTL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 1.7A (Tc) 10V 3.4Ohm @ 500mA, 10V 4V @ 1mA 6.5 nC @ 10 V ±20V 65 pF @ 25 V - 20W (Tc) 150°C (TJ) Surface Mount
QS5U33TR

QS5U33TR

MOSFET P-CH 30V 2A TSMT5

Rohm Semiconductor
3,381 -

RFQ

QS5U33TR

Ficha técnica

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 30 V 2A (Ta) 4V, 10V 135mOhm @ 2A, 10V 2.5V @ 1mA 3.4 nC @ 5 V ±20V 310 pF @ 10 V Schottky Diode (Isolated) 1.25W (Ta) 150°C (TJ) Surface Mount
RSQ030P03TR

RSQ030P03TR

MOSFET P-CH 30V 3A TSMT6

Rohm Semiconductor
2,385 -

RFQ

RSQ030P03TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 3A (Ta) 4V, 10V 80mOhm @ 3A, 10V 2.5V @ 1mA 6 nC @ 5 V ±20V 440 pF @ 10 V - 1.25W (Ta) 150°C (TJ) Surface Mount
RSQ035P03TR

RSQ035P03TR

MOSFET P-CH 30V 3.5A TSMT6

Rohm Semiconductor
3,986 -

RFQ

RSQ035P03TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 3.5A (Ta) 4V, 10V 65mOhm @ 3.5A, 10V 2.5V @ 1mA 9.2 nC @ 5 V ±20V 780 pF @ 10 V - 1.25W (Ta) 150°C (TJ) Surface Mount
RTQ045N03TR

RTQ045N03TR

MOSFET N-CH 30V 4.5A TSMT6

Rohm Semiconductor
2,775 -

RFQ

RTQ045N03TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 4.5A (Ta) 2.5V, 4.5V 43mOhm @ 4.5A, 4.5V 1.5V @ 1mA 10.7 nC @ 4.5 V ±12V 540 pF @ 10 V - 1.25W (Ta) 150°C (TJ) Surface Mount
US5U35TR

US5U35TR

MOSFET P-CH 45V 700MA TUMT5

Rohm Semiconductor
2,465 -

RFQ

US5U35TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 45 V 700mA (Ta) 4V, 10V 800mOhm @ 700mA, 10V 2.5V @ 1mA 1.7 nC @ 5 V ±20V 120 pF @ 10 V Schottky Diode (Isolated) 1W (Ta) 150°C (TJ) Surface Mount
RTL020P02TR

RTL020P02TR

MOSFET P-CH 20V 2A TUMT6

Rohm Semiconductor
3,853 -

RFQ

RTL020P02TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) * Active - - - - - - - - - - - - - -
US6U37TR

US6U37TR

MOSFET N-CH 30V 1.5A TUMT6

Rohm Semiconductor
1,453 -

RFQ

US6U37TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) * Active - - - - - - - - - - - - - -
RSR020P05TL

RSR020P05TL

MOSFET P-CH 45V 2A TSMT3

Rohm Semiconductor
2,467 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 45 V 2A (Ta) 4V, 10V 190mOhm @ 2A, 10V 3V @ 1mA 4.5 nC @ 4.5 V ±20V 500 pF @ 10 V - 540mW (Ta) 150°C (TJ) Surface Mount
RSD050N06TL

RSD050N06TL

MOSFET N-CH 60V 5A CPT3

Rohm Semiconductor
3,517 -

RFQ

RSD050N06TL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 5A (Ta) 4V, 10V 109mOhm @ 5A, 10V 3V @ 1mA 8 nC @ 10 V ±20V 290 pF @ 10 V - 15W (Tc) 150°C (TJ) Surface Mount
RSQ045N03TR

RSQ045N03TR

MOSFET N-CH 30V 4.5A TSMT6

Rohm Semiconductor
3,744 -

RFQ

RSQ045N03TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 4.5A (Ta) 4V, 10V 38mOhm @ 4.5A, 10V 2.5V @ 1mA 9.5 nC @ 5 V ±20V 520 pF @ 10 V - 600mW (Ta) 150°C (TJ) Surface Mount
RUQ050N02TR

RUQ050N02TR

MOSFET N-CH 20V 5A TSMT6

Rohm Semiconductor
3,298 -

RFQ

RUQ050N02TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 5A (Ta) 1.5V, 4.5V 30mOhm @ 5A, 4.5V 1.3V @ 1mA 12 nC @ 4.5 V ±10V 900 pF @ 10 V - 1.25W (Ta) 150°C (TJ) Surface Mount
SCT3080KRC14

SCT3080KRC14

SICFET N-CH 1200V 31A TO247-4L

Rohm Semiconductor
563 -

RFQ

SCT3080KRC14

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 31A (Tc) 18V 104mOhm @ 10A, 18V 5.6V @ 5mA 60 nC @ 18 V +22V, -4V 785 pF @ 800 V - 165W 175°C (TJ) Through Hole
TT8U1TR

TT8U1TR

MOSFET P-CH 20V 2.4A 8TSST

Rohm Semiconductor
3,205 -

RFQ

TT8U1TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 2.4A (Ta) 1.5V, 4.5V 105mOhm @ 2.4A, 4.5V 1V @ 1mA 6.7 nC @ 4.5 V ±10V 850 pF @ 10 V Schottky Diode (Isolated) 1.25W (Ta) 150°C (TJ) Surface Mount
SCT3105KRC14

SCT3105KRC14

SICFET N-CH 1200V 24A TO247-4L

Rohm Semiconductor
137 -

RFQ

SCT3105KRC14

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 24A (Tc) 18V 137mOhm @ 7.6A, 18V 5.6V @ 3.81mA 51 nC @ 18 V +22V, -4V 574 pF @ 800 V - 134W 175°C (TJ) Through Hole
SCT3030KLHRC11

SCT3030KLHRC11

SICFET N-CH 1200V 72A TO247N

Rohm Semiconductor
779 -

RFQ

SCT3030KLHRC11

Ficha técnica

Tube Automotive, AEC-Q101 Active N-Channel SiCFET (Silicon Carbide) 1200 V 72A (Tc) 18V 39mOhm @ 27A, 18V 5.6V @ 13.3mA 131 nC @ 18 V +22V, -4V 2222 pF @ 800 V - 339W 175°C (TJ) Through Hole
RSQ015P10TR

RSQ015P10TR

MOSFET P-CH 100V 1.5A TSMT6

Rohm Semiconductor
3,243 -

RFQ

RSQ015P10TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 100 V 1.5A (Ta) 4V, 10V 470mOhm @ 1.5A, 10V 2.5V @ 1mA 17 nC @ 5 V ±20V 950 pF @ 25 V - 600mW (Ta) 150°C (TJ) Surface Mount
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1800+ Fabricantes em todo o mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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