Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SCT3060ALHRC11

SCT3060ALHRC11

SICFET N-CH 650V 39A TO247N

Rohm Semiconductor
126 -

RFQ

SCT3060ALHRC11

Ficha técnica

Tube Automotive, AEC-Q101 Active N-Channel SiCFET (Silicon Carbide) 650 V 39A (Tc) 18V 78mOhm @ 13A, 18V 5.6V @ 6.67mA 58 nC @ 18 V +22V, -4V 852 pF @ 500 V - 165W 175°C (TJ) Through Hole
RD3P050SNFRATL

RD3P050SNFRATL

MOSFET N-CH 100V 5A TO252

Rohm Semiconductor
2,500 -

RFQ

RD3P050SNFRATL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 100 V 5A (Ta) 4V, 10V 190mOhm @ 5A, 10V 2.5V @ 1mA 14 nC @ 10 V ±20V 530 pF @ 25 V - 15W (Tc) 150°C (TJ) Surface Mount
RQ3P300BETB1

RQ3P300BETB1

MOSFET N-CH 100V 10A/36A 8HSMT

Rohm Semiconductor
3,064 -

RFQ

RQ3P300BETB1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 10A (Ta), 36A (Tc) 10V 21mOhm @ 10A, 10V 4V @ 200µA 19.1 nC @ 10 V ±20V 1250 pF @ 50 V - 2W (Ta), 32W (Tc) 150°C (TJ) Surface Mount
R6006KND3TL1

R6006KND3TL1

MOSFET N-CH 600V 6A TO252

Rohm Semiconductor
4,868 -

RFQ

R6006KND3TL1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 6A (Tc) 10V 830mOhm @ 3A, 10V 5.5V @ 1mA 12 nC @ 10 V ±20V 350 pF @ 25 V - 70W (Tc) 150°C (TJ) Surface Mount
RSH100N03TB1

RSH100N03TB1

MOSFET N-CH 30V 10A 8SOP

Rohm Semiconductor
2,348 -

RFQ

RSH100N03TB1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 10A (Ta) 4V, 10V 13.3mOhm @ 10A, 10V 2.5V @ 1mA 20 nC @ 5 V ±20V 1070 pF @ 10 V - 2W (Ta) - Surface Mount
RSS065N03TB

RSS065N03TB

MOSFET N-CH 30V 6.5A 8SOP

Rohm Semiconductor
3,047 -

RFQ

RSS065N03TB

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 6.5A (Ta) 4V, 10V 26mOhm @ 6.5A, 10V 2.5V @ 1mA 6.1 nC @ 5 V ±20V 430 pF @ 10 V - 2W (Ta) 150°C (TJ) Surface Mount
RQ3E130MNTB1

RQ3E130MNTB1

MOSFET N-CH 30V 13A HSMT8

Rohm Semiconductor
1,969 -

RFQ

RQ3E130MNTB1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) 4.5V, 10V 8.1mOhm @ 13A, 10V 2.5V @ 1mA 14 nC @ 10 V ±20V 840 pF @ 15 V - 2W (Ta) 150°C (TJ) Surface Mount
RQ3E100MNTB1

RQ3E100MNTB1

MOSFET N-CH 30V 10A HSMT8

Rohm Semiconductor
5,261 -

RFQ

RQ3E100MNTB1

Ficha técnica

Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 10A (Ta) 4.5V, 10V 12.3mOhm @ 10A, 10V 2.5V @ 1mA 9.9 nC @ 10 V ±20V 520 pF @ 15 V - 2W (Ta) 150°C (TJ) Surface Mount
R6007JNXC7G

R6007JNXC7G

MOSFET N-CH 600V 7A TO220FM

Rohm Semiconductor
2,036 -

RFQ

R6007JNXC7G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 15V 780mOhm @ 3.5A, 15V 7V @ 1mA 17.5 nC @ 15 V ±30V 475 pF @ 100 V - 46W (Tc) -55°C ~ 150°C (TJ) Through Hole
R6009JNXC7G

R6009JNXC7G

MOSFET N-CH 600V 9A TO220FM

Rohm Semiconductor
1,909 -

RFQ

R6009JNXC7G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 15V 585mOhm @ 4.5A, 15V 7V @ 1.38mA 22 nC @ 15 V ±30V 645 pF @ 100 V - 53W (Tc) -55°C ~ 150°C (TJ) Through Hole
R6009ENX

R6009ENX

MOSFET N-CH 600V 9A TO220FM

Rohm Semiconductor
400 -

RFQ

R6009ENX

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 10V 535mOhm @ 2.8A, 10V 4V @ 1mA 23 nC @ 10 V ±20V 430 pF @ 25 V - 40W (Tc) 150°C (TJ) Through Hole
R6024ENX

R6024ENX

MOSFET N-CH 600V 24A TO220FM

Rohm Semiconductor
472 -

RFQ

R6024ENX

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V 165mOhm @ 11.3A, 10V 4V @ 1mA 70 nC @ 10 V ±20V 1650 pF @ 25 V - 40W (Tc) 150°C (TJ) Through Hole
RCD050N20TL

RCD050N20TL

MOSFET N-CH 200V 5A CPT3

Rohm Semiconductor
2,672 -

RFQ

RCD050N20TL

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 200 V 5A (Ta) 10V 618mOhm @ 2.5A, 10V 5.25V @ 1mA 9 nC @ 10 V ±30V 380 pF @ 25 V - 20W (Tc) 150°C (TJ) Surface Mount
R6020JNXC7G

R6020JNXC7G

MOSFET N-CH 600V 20A TO220FM

Rohm Semiconductor
1,955 -

RFQ

R6020JNXC7G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 15V 234mOhm @ 10A, 15V 7V @ 3.5mA 45 nC @ 15 V ±30V 1500 pF @ 100 V - 76W (Tc) -55°C ~ 150°C (TJ) Through Hole
R6025JNXC7G

R6025JNXC7G

MOSFET N-CH 600V 25A TO220FM

Rohm Semiconductor
1,975 -

RFQ

R6025JNXC7G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 15V 182mOhm @ 12.5A, 15V 7V @ 4.5mA 57 nC @ 15 V ±30V 1900 pF @ 100 V - 85W (Tc) -55°C ~ 150°C (TJ) Through Hole
R6030JNXC7G

R6030JNXC7G

MOSFET N-CH 600V 30A TO220FM

Rohm Semiconductor
1,617 -

RFQ

R6030JNXC7G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 15V 143mOhm @ 15A, 15V 7V @ 5.5mA 74 nC @ 15 V ±30V 2500 pF @ 100 V - 95W (Tc) 150°C (TJ) Through Hole
R6020KNZ4C13

R6020KNZ4C13

MOSFET N-CH 600V 20A TO247

Rohm Semiconductor
547 -

RFQ

R6020KNZ4C13

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 196mOhm @ 9.5A, 10V 5V @ 1mA 40 nC @ 10 V ±20V 1550 pF @ 25 V - 231W (Tc) 150°C (TJ) Through Hole
R6020JNZ4C13

R6020JNZ4C13

MOSFET N-CH 600V 20A TO247G

Rohm Semiconductor
412 -

RFQ

R6020JNZ4C13

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 15V 234mOhm @ 10A, 15V 7V @ 3.5mA 45 nC @ 15 V ±30V 1500 pF @ 100 V - 252W (Tc) -55°C ~ 150°C (TJ) Through Hole
R6520KNZ4C13

R6520KNZ4C13

MOSFET N-CH 650V 20A TO247

Rohm Semiconductor
419 -

RFQ

R6520KNZ4C13

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 205mOhm @ 9.5A, 10V 5V @ 630µA 40 nC @ 10 V ±20V 1550 pF @ 25 V - 231W (Tc) 150°C (TJ) Through Hole
R6025JNZ4C13

R6025JNZ4C13

MOSFET N-CH 600V 25A TO247G

Rohm Semiconductor
597 -

RFQ

R6025JNZ4C13

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 15V 182mOhm @ 12.5A, 15V 7V @ 4.5mA 57 nC @ 15 V ±30V 1900 pF @ 100 V - 306W (Tc) -55°C ~ 150°C (TJ) Through Hole
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1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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