Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFS3307ZPBF

IRFS3307ZPBF

MOSFET N-CH 75V 120A D2PAK

Infineon Technologies
2,470 -

RFQ

IRFS3307ZPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 10V 5.8mOhm @ 75A, 10V 4V @ 150µA 110 nC @ 10 V ±20V 4750 pF @ 50 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPZ60R017C7XKSA1

IPZ60R017C7XKSA1

MOSFET N-CH 600V 109A TO247-4

Infineon Technologies
16,932 -

RFQ

IPZ60R017C7XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 600 V 109A (Tc) 10V 17mOhm @ 58.2A, 10V 4V @ 2.91mA 240 nC @ 10 V ±20V 9890 pF @ 400 V - 446W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPP11N60CFDXKSA1

SPP11N60CFDXKSA1

MOSFET N-CH 650V 11A TO220-3

Infineon Technologies
2,896 -

RFQ

SPP11N60CFDXKSA1

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 440mOhm @ 7A, 10V 5V @ 500µA 64 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPU02N60S5BKMA1

SPU02N60S5BKMA1

MOSFET N-CH 600V 1.8A TO251-3

Infineon Technologies
3,000 -

RFQ

SPU02N60S5BKMA1

Ficha técnica

Bulk,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 1.8A (Tc) 10V 3Ohm @ 1.1A, 10V 5.5V @ 80µA 9.5 nC @ 10 V ±20V 240 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPB20N60S5ATMA1

SPB20N60S5ATMA1

MOSFET N-CH 600V 20A TO263-3

Infineon Technologies
2,862 -

RFQ

SPB20N60S5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 190mOhm @ 13A, 10V 5.5V @ 1mA 103 nC @ 10 V ±20V 3000 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFS38N20DPBF

IRFS38N20DPBF

MOSFET N-CH 200V 43A D2PAK

Infineon Technologies
3,313 -

RFQ

IRFS38N20DPBF

Ficha técnica

Bulk,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 200 V 43A (Tc) 10V 54mOhm @ 26A, 10V 5V @ 250µA 91 nC @ 10 V ±20V 2900 pF @ 25 V - 3.8W (Ta), 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLML9301TRPBF

IRLML9301TRPBF

MOSFET P-CH 30V 3.6A SOT23

Infineon Technologies
2,982 -

RFQ

IRLML9301TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active P-Channel MOSFET (Metal Oxide) 30 V 3.6A (Ta) 4.5V, 10V 64mOhm @ 3.6A, 10V 2.4V @ 10µA 4.8 nC @ 4.5 V ±20V 388 pF @ 25 V - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSV236SPH6327XTSA1

BSV236SPH6327XTSA1

MOSFET P-CH 20V 1.5A SOT363-6

Infineon Technologies
2,869 -

RFQ

BSV236SPH6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 20 V 1.5A (Ta) 2.5V, 4.5V 175mOhm @ 1.5A, 4.5V 1.2V @ 8µA 5.7 nC @ 4.5 V ±12V 228 pF @ 15 V - 560mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLHS2242TRPBF

IRLHS2242TRPBF

MOSFET P-CH 20V 7.2A/15A 6PQFN

Infineon Technologies
3,557 -

RFQ

IRLHS2242TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active P-Channel MOSFET (Metal Oxide) 20 V 7.2A (Ta), 15A (Tc) 2.5V, 4.5V 31mOhm @ 8.5A, 4.5V 1.1V @ 10µA 12 nC @ 10 V ±12V 877 pF @ 10 V - 2.1W (Ta), 9.6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD50R1K4CEAUMA1

IPD50R1K4CEAUMA1

MOSFET N-CH 500V 3.1A TO252-3

Infineon Technologies
2,304 -

RFQ

IPD50R1K4CEAUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ CE Active N-Channel MOSFET (Metal Oxide) 500 V 3.1A (Tc) 13V 1.4Ohm @ 900mA, 13V 3.5V @ 70µA 8.2 nC @ 10 V ±20V 178 pF @ 100 V - 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFH8325TRPBF

IRFH8325TRPBF

MOSFET N-CH 30V 21A/82A PQFN

Infineon Technologies
3,260 -

RFQ

IRFH8325TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 21A (Ta), 82A (Tc) 4.5V, 10V 5mOhm @ 20A, 10V 2.35V @ 50µA 32 nC @ 10 V ±20V 2487 pF @ 10 V - 3.6W (Ta), 54W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSL211SPH6327XTSA1

BSL211SPH6327XTSA1

MOSFET P-CH 20V 4.7A TSOP-6

Infineon Technologies
3,975 -

RFQ

BSL211SPH6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 20 V 4.7A (Ta) 2.5V, 4.5V 67mOhm @ 4.7A, 4.5V 1.2V @ 25µA 12.4 nC @ 10 V ±12V 654 pF @ 15 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
ISP75DP06LMXTSA1

ISP75DP06LMXTSA1

MOSFET P-CH 60V 1.1A SOT223-4

Infineon Technologies
3,512 -

RFQ

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 60 V 1.1A (Ta) 4.5V, 10V 750mOhm @ 1.1A, 10V 2V @ 77µA 4 nC @ 10 V ±20V 120 pF @ 30 V - 1.8W (Ta), 4.2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF8113TRPBF

IRF8113TRPBF

MOSFET N-CH 30V 17.2A 8SO

Infineon Technologies
3,754 -

RFQ

IRF8113TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 17.2A (Ta) 4.5V, 10V 5.6mOhm @ 17.2A, 10V 2.2V @ 250µA 36 nC @ 4.5 V ±20V 2910 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFR2607ZPBF

IRFR2607ZPBF

MOSFET N-CH 75V 42A DPAK

Infineon Technologies
3,412 -

RFQ

IRFR2607ZPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 75 V 42A (Tc) 10V 22mOhm @ 30A, 10V 4V @ 50µA 51 nC @ 10 V ±20V 1440 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6643TR1PBF

IRF6643TR1PBF

MOSFET N-CH 150V 6.2A DIRECTFET

Infineon Technologies
2,660 -

RFQ

IRF6643TR1PBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 6.2A (Ta), 35A (Tc) 10V 34.5mOhm @ 7.6A, 10V 4.9V @ 150µA 55 nC @ 10 V ±20V 2340 pF @ 25 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPN50R800CEATMA1

IPN50R800CEATMA1

MOSFET N-CH 500V 7.6A SOT223

Infineon Technologies
3,519 -

RFQ

IPN50R800CEATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ CE Active N-Channel MOSFET (Metal Oxide) 500 V 7.6A (Tc) 13V 800mOhm @ 1.5A, 13V 3.5V @ 130µA 12.4 nC @ 10 V ±20V 280 pF @ 100 V - 5W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPN60R2K0PFD7SATMA1

IPN60R2K0PFD7SATMA1

MOSFET N-CH 650V 3A SOT223

Infineon Technologies
2,748 -

RFQ

Tape & Reel (TR),Cut Tape (CT) CoolMOS™PFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 3A (Tc) 10V 2Ohm @ 500mA, 10V 4.5V @ 30µA 3.8 nC @ 10 V ±20V 134 pF @ 400 V - 6W (Tc) -40°C ~ 150°C (TJ) Surface Mount
BSC042N03S G

BSC042N03S G

MOSFET N-CH 30V 20A/95A TDSON

Infineon Technologies
2,850 -

RFQ

BSC042N03S G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 20A (Ta), 95A (Tc) 4.5V, 10V 4.2mOhm @ 50A, 10V 2V @ 50µA 28 nC @ 5 V ±20V 3660 pF @ 15 V - 2.8W (Ta), 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSP149L6327HTSA1

BSP149L6327HTSA1

MOSFET N-CH 200V 660MA SOT223-4

Infineon Technologies
2,763 -

RFQ

BSP149L6327HTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 660mA (Ta) 0V, 10V 1.8Ohm @ 660mA, 10V 1V @ 400µA 14 nC @ 5 V ±20V 430 pF @ 25 V Depletion Mode 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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