Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPD50N04S4L08ATMA1

IPD50N04S4L08ATMA1

MOSFET N-CH 40V 50A TO252-3

Infineon Technologies
3,761 -

RFQ

IPD50N04S4L08ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 50A (Tc) 4.5V, 10V 7.3mOhm @ 50A, 10V 2.2V @ 17µA 30 nC @ 10 V +20V, -16V 2340 pF @ 25 V - 46W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPZ40N04S53R1ATMA1

IPZ40N04S53R1ATMA1

MOSFET N-CH 40V 40A 8TSDSON

Infineon Technologies
3,789 -

RFQ

IPZ40N04S53R1ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk Automotive, AEC-Q101, OptiMOS™-5 Active N-Channel MOSFET (Metal Oxide) 40 V 40A (Tc) 7V, 10V 3.1mOhm @ 20A, 10V 3.4V @ 30µA 41 nC @ 10 V ±20V 2310 pF @ 25 V - 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD80R2K4P7ATMA1

IPD80R2K4P7ATMA1

MOSFET N-CH 800V 2.5A TO252-3

Infineon Technologies
2,736 -

RFQ

IPD80R2K4P7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 800 V 2.5A (Tc) 10V 2.4Ohm @ 800mA, 10V 3.5V @ 40µA 7.5 nC @ 10 V ±20V 150 pF @ 500 V - 22W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPN70R450P7SATMA1

IPN70R450P7SATMA1

MOSFET N-CH 700V 10A SOT223

Infineon Technologies
2,206 -

RFQ

IPN70R450P7SATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 700 V 10A (Tc) 10V 450mOhm @ 2.3A, 10V 3.5V @ 120µA 13.1 nC @ 10 V ±16V 424 pF @ 400 V - 7.1W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPN80R2K0P7ATMA1

IPN80R2K0P7ATMA1

MOSFET N-CHANNEL 800V 3A SOT223

Infineon Technologies
3,042 -

RFQ

IPN80R2K0P7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 800 V 3A (Tc) 10V 2Ohm @ 940mA, 10V 3.5V @ 50µA 9 nC @ 10 V ±20V 175 pF @ 500 V - 6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC110N06NS3GATMA1

BSC110N06NS3GATMA1

MOSFET N-CH 60V 50A TDSON-8

Infineon Technologies
3,254 -

RFQ

BSC110N06NS3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 11mOhm @ 50A, 10V 4V @ 23µA 33 nC @ 10 V ±20V 2700 pF @ 30 V - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSZ063N04LS6ATMA1

BSZ063N04LS6ATMA1

MOSFET N-CH 40V 15A/40A TSDSON

Infineon Technologies
2,413 -

RFQ

BSZ063N04LS6ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 6 Active N-Channel MOSFET (Metal Oxide) 40 V 15A (Ta), 40A (Tc) 4.5V, 10V 6.3mOhm @ 20A, 10V 2.3V @ 250µA 9.5 nC @ 10 V ±20V 650 pF @ 20 V - 2.5W (Ta), 38W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD75N04S406ATMA1

IPD75N04S406ATMA1

MOSFET N-CH 40V 75A TO252-3

Infineon Technologies
2,531 -

RFQ

IPD75N04S406ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 5.9mOhm @ 75A, 10V 4V @ 26µA 32 nC @ 10 V ±20V 2550 pF @ 25 V - 58W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSZ120P03NS3GATMA1

BSZ120P03NS3GATMA1

MOSFET P-CH 30V 11A/40A 8TSDSON

Infineon Technologies
3,275 -

RFQ

BSZ120P03NS3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 30 V 11A (Ta), 40A (Tc) 6V, 10V 12mOhm @ 20A, 10V 3.1V @ 73µA 45 nC @ 10 V ±25V 3360 pF @ 15 V - 2.1W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IAUZ30N10S5L240ATMA1

IAUZ30N10S5L240ATMA1

MOSFET N-CH 100V 30A 8TSDSON-32

Infineon Technologies
2,003 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™-5 Active N-Channel MOSFET (Metal Oxide) 100 V 30A (Tc) 4.5V, 10V 24mOhm @ 15A, 10V 2.2V @ 15µA 14 nC @ 10 V ±20V 832 pF @ 50 V - 45.5W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD60R360P7SAUMA1

IPD60R360P7SAUMA1

MOSFET N-CH 600V 9A TO252-3

Infineon Technologies
3,362 -

RFQ

IPD60R360P7SAUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 10V 360mOhm @ 2.7A, 10V 4V @ 140µA 13 nC @ 10 V ±20V 555 pF @ 400 V - 41W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPC100N04S5L2R6ATMA1

IPC100N04S5L2R6ATMA1

MOSFET N-CH 40V 100A 8TDSON-34

Infineon Technologies
3,634 -

RFQ

IPC100N04S5L2R6ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 4.5V, 10V 2.6mOhm @ 50A, 10V 2V @ 30µA 55 nC @ 10 V ±16V 2925 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSZ033NE2LS5ATMA1

BSZ033NE2LS5ATMA1

MOSFET N-CH 25V 18A/40A TSDSON

Infineon Technologies
3,966 -

RFQ

BSZ033NE2LS5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 25 V 18A (Ta), 40A (Tc) 4.5V, 10V 3.3mOhm @ 20A, 10V 2V @ 250µA 18.3 nC @ 10 V ±16V 1230 pF @ 12 V - 2.1W (Ta), 30W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD80R2K8CEATMA1

IPD80R2K8CEATMA1

MOSFET N-CH 800V 1.9A TO252-3

Infineon Technologies
2,731 -

RFQ

IPD80R2K8CEATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ CE Active N-Channel MOSFET (Metal Oxide) 800 V 1.9A (Tc) 10V 2.8Ohm @ 1.1A, 10V 3.9V @ 120µA 12 nC @ 10 V ±20V 290 pF @ 100 V - 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSZ22DN20NS3GATMA1

BSZ22DN20NS3GATMA1

MOSFET N-CH 200V 7A 8TSDSON

Infineon Technologies
3,339 -

RFQ

BSZ22DN20NS3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 200 V 7A (Tc) 10V 225mOhm @ 3.5A, 10V 4V @ 13µA 5.6 nC @ 10 V ±20V 430 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSZ068N06NSATMA1

BSZ068N06NSATMA1

MOSFET N-CH 60V 40A TSDSON

Infineon Technologies
3,519 -

RFQ

BSZ068N06NSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 40A (Tc) 6V, 10V 6.8mOhm @ 20A, 10V 3.3V @ 20µA 21 nC @ 10 V ±20V 1500 pF @ 30 V - 2.1W (Ta), 46W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD135N08N3GATMA1

IPD135N08N3GATMA1

MOSFET N-CH 80V 45A TO252-3

Infineon Technologies
2,069 -

RFQ

IPD135N08N3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 45A (Tc) 6V, 10V 13.5mOhm @ 45A, 10V 3.5V @ 33µA 25 nC @ 10 V ±20V 1730 pF @ 40 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFH7932TRPBF

IRFH7932TRPBF

MOSFET N-CH 30V 24A/104A PQFN

Infineon Technologies
2,776 -

RFQ

IRFH7932TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 24A (Ta), 104A (Tc) 4.5V, 10V 3.3mOhm @ 25A, 10V 2.35V @ 100µA 51 nC @ 4.5 V ±20V 4270 pF @ 15 V - 3.4W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFH5301TRPBF

IRFH5301TRPBF

MOSFET N-CH 30V 35A/100A PQFN

Infineon Technologies
3,169 -

RFQ

IRFH5301TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 35A (Ta), 100A (Tc) 4.5V, 10V 1.85mOhm @ 50A, 10V 2.35V @ 100µA 77 nC @ 10 V ±20V 5114 pF @ 15 V - 3.6W (Ta), 110W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPN80R1K2P7ATMA1

IPN80R1K2P7ATMA1

MOSFET N-CH 800V 4.5A SOT223

Infineon Technologies
2,026 -

RFQ

IPN80R1K2P7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 800 V 4.5A (Tc) 10V 1.2Ohm @ 1.7A, 10V 3.5V @ 80µA 11 nC @ 10 V ±20V 300 pF @ 500 V - 6.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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1800+ Fabricantes em todo o mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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