Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPD26N06S2L35ATMA2

IPD26N06S2L35ATMA2

MOSFET N-CH 55V 30A TO252-31

Infineon Technologies
2,499 -

RFQ

IPD26N06S2L35ATMA2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 30A (Tc) 4.5V, 10V 35mOhm @ 13A, 10V 2V @ 26µA 24 nC @ 10 V ±20V 621 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC018NE2LSIATMA1

BSC018NE2LSIATMA1

MOSFET N-CH 25V 29A/100A TDSON

Infineon Technologies
5,000 -

RFQ

BSC018NE2LSIATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 25 V 29A (Ta), 100A (Tc) 4.5V, 10V 1.8mOhm @ 30A, 10V 2V @ 250µA 36 nC @ 10 V ±20V 2500 pF @ 12 V - 2.5W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLR3114ZTRPBF

IRLR3114ZTRPBF

MOSFET N-CH 40V 42A DPAK

Infineon Technologies
3,841 -

RFQ

IRLR3114ZTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 42A (Tc) 4.5V, 10V 4.9mOhm @ 42A, 10V 2.5V @ 100µA 56 nC @ 4.5 V ±16V 3810 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSZ0901NSIATMA1

BSZ0901NSIATMA1

MOSFET N-CH 30V 25A/40A TSDSON

Infineon Technologies
3,178 -

RFQ

BSZ0901NSIATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 25A (Ta), 40A (Tc) 4.5V, 10V 2.1mOhm @ 20A, 10V 2.2V @ 250µA 41 nC @ 10 V ±20V 2600 pF @ 15 V Schottky Diode (Body) 2.1W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IAUC70N08S5N074ATMA1

IAUC70N08S5N074ATMA1

MOSFET N-CH 80V 70A 8TDSON-33

Infineon Technologies
2,928 -

RFQ

IAUC70N08S5N074ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™-5 Active N-Channel MOSFET (Metal Oxide) 80 V 70A (Tc) 6V, 10V 7.4mOhm @ 35A, 10V 3.8V @ 36µA 30 nC @ 10 V ±20V 2080 pF @ 40 V - 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC0502NSIATMA1

BSC0502NSIATMA1

MOSFET N-CH 30V 26A/100A TDSON

Infineon Technologies
2,549 -

RFQ

BSC0502NSIATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 26A (Ta), 100A (Tc) 4.5V, 10V 2.3mOhm @ 30A, 10V 2V @ 250µA 26 nC @ 10 V ±20V 1600 pF @ 15 V - 2.5W (Ta), 43W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSO033N03MSGXUMA1

BSO033N03MSGXUMA1

MOSFET N-CH 30V 17A 8DSO

Infineon Technologies
3,984 -

RFQ

BSO033N03MSGXUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 30 V 17A (Ta) 4.5V, 10V 3.3mOhm @ 22A, 10V 2V @ 250µA 124 nC @ 10 V ±20V 9600 pF @ 15 V - 1.56W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPD80R1K4CEATMA1

IPD80R1K4CEATMA1

MOSFET N-CH 800V 3.9A TO252-3

Infineon Technologies
2,184 -

RFQ

IPD80R1K4CEATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 800 V 3.9A (Tc) 10V 1.4Ohm @ 2.3A, 10V 3.9V @ 240µA 23 nC @ 10 V ±20V 570 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF630NSTRLPBF

IRF630NSTRLPBF

MOSFET N-CH 200V 9.3A D2PAK

Infineon Technologies
3,216 -

RFQ

IRF630NSTRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 9.3A (Tc) 10V 300mOhm @ 5.4A, 10V 4V @ 250µA 35 nC @ 10 V ±20V 575 pF @ 25 V - 82W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB081N06L3GATMA1

IPB081N06L3GATMA1

MOSFET N-CH 60V 50A D2PAK

Infineon Technologies
3,893 -

RFQ

IPB081N06L3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 8.1mOhm @ 50A, 10V 2.2V @ 34µA 29 nC @ 4.5 V ±20V 4900 pF @ 30 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD50P04P4L11ATMA2

IPD50P04P4L11ATMA2

MOSFET P-CH 40V 50A TO252-3

Infineon Technologies
3,402 -

RFQ

IPD50P04P4L11ATMA2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS®-P2 Active P-Channel MOSFET (Metal Oxide) 40 V 50A (Tc) 4.5V, 10V 10.6mOhm @ 50A, 10V 2.2V @ 85µA 59 nC @ 10 V +5V, -16V 3900 pF @ 25 V - 58W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD50P04P413ATMA2

IPD50P04P413ATMA2

MOSFET P-CH 40V 50A TO252-3

Infineon Technologies
3,563 -

RFQ

IPD50P04P413ATMA2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS®-P2 Active P-Channel MOSFET (Metal Oxide) 40 V 50A (Tc) 10V 12.6mOhm @ 50A, 10V 4V @ 85µA 51 nC @ 10 V ±20V 3670 pF @ 25 V - 58W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF2804S-7PPBF

IRF2804S-7PPBF

MOSFET N-CH 40V 160A D2PAK

Infineon Technologies
2,003 -

RFQ

IRF2804S-7PPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 10V 1.6mOhm @ 160A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 6930 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3515STRLPBF

IRF3515STRLPBF

MOSFET N-CH 150V 41A D2PAK

Infineon Technologies
2,593 -

RFQ

IRF3515STRLPBF

Ficha técnica

Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 150 V 41A (Tc) - 45mOhm @ 25A, 10V 4.5V @ 250µA 107 nC @ 10 V - 2260 pF @ 25 V - - - Surface Mount
IRF3704STRLPBF

IRF3704STRLPBF

MOSFET N-CH 20V 77A D2PAK

Infineon Technologies
2,172 -

RFQ

IRF3704STRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 77A (Tc) 4.5V, 10V 9mOhm @ 15A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V 1996 pF @ 10 V - 87W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3711STRLPBF

IRF3711STRLPBF

MOSFET N-CH 20V 110A D2PAK

Infineon Technologies
3,082 -

RFQ

IRF3711STRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 110A (Tc) 4.5V, 10V 6mOhm @ 15A, 10V 3V @ 250µA 44 nC @ 4.5 V ±20V 2980 pF @ 10 V - 3.1W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF6622TRPBF

IRF6622TRPBF

MOSFET N-CH 25V 15A DIRECTFET

Infineon Technologies
2,894 -

RFQ

IRF6622TRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 25 V 15A (Ta), 59A (Tc) 4.5V, 10V 6.3mOhm @ 15A, 10V 2.35V @ 25µA 17 nC @ 4.5 V ±20V 1450 pF @ 13 V - 2.2W (Ta), 34W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF7603TRPBF

IRF7603TRPBF

MOSFET N-CH 30V 5.6A MICRO8

Infineon Technologies
3,221 -

RFQ

IRF7603TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 5.6A (Ta) 4.5V, 10V 35mOhm @ 3.7A, 10V 1V @ 250µA 27 nC @ 10 V ±20V 520 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFH9310TRPBF

IRFH9310TRPBF

MOSFET P-CH 30V 21A/40A PQFN

Infineon Technologies
3,390 -

RFQ

IRFH9310TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active P-Channel MOSFET (Metal Oxide) 30 V 21A (Ta), 40A (Tc) 4.5V, 10V 4.6mOhm @ 21A, 10V 2.4V @ 100µA 58 nC @ 4.5 V ±20V 5250 pF @ 15 V - 3.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSC067N06LS3GATMA1

BSC067N06LS3GATMA1

MOSFET N-CH 60V 15A/50A TDSON

Infineon Technologies
2,848 -

RFQ

BSC067N06LS3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 15A (Ta), 50A (Tc) 4.5V, 10V 6.7mOhm @ 50A, 10V 2.2V @ 35µA 67 nC @ 10 V ±20V 5100 pF @ 30 V - 2.5W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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1800+ Fabricantes em todo o mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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