Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFU5410PBF

IRFU5410PBF

MOSFET P-CH 100V 13A IPAK

Infineon Technologies
3,607 -

RFQ

IRFU5410PBF

Ficha técnica

Tube HEXFET® Active P-Channel MOSFET (Metal Oxide) 100 V 13A (Tc) 10V 205mOhm @ 7.8A, 10V 4V @ 250µA 58 nC @ 10 V ±20V 760 pF @ 25 V - 66W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPLK60R600PFD7ATMA1

IPLK60R600PFD7ATMA1

MOSFET N-CH 600V 7A THIN-PAK

Infineon Technologies
3,999 -

RFQ

IPLK60R600PFD7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ PFD7 Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 600mOhm @ 1.7A, 10V 4.5V @ 80µA 8.5 nC @ 10 V ±20V 344 pF @ 400 V - 45W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFH7085TRPBF

IRFH7085TRPBF

MOSFET N-CH 60V 100A PQFN

Infineon Technologies
3,669 -

RFQ

IRFH7085TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) StrongIRFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 6V, 10V 3.2mOhm @ 75A, 10V 3.7V @ 150µA 165 nC @ 10 V ±20V 6460 pF @ 25 V - 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSZ096N10LS5ATMA1

BSZ096N10LS5ATMA1

MOSFET N-CH 100V 40A TSDSON

Infineon Technologies
3,049 -

RFQ

BSZ096N10LS5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 100 V 40A (Tc) 4.5V, 10V 9.6mOhm @ 20A, 10V 2.3V @ 36µA 22 nC @ 10 V ±20V 2100 pF @ 50 V Standard 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB80N03S4L03ATMA1

IPB80N03S4L03ATMA1

MOSFET N-CH 30V 80A TO263-3

Infineon Technologies
20,035 -

RFQ

IPB80N03S4L03ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 3.3mOhm @ 80A, 10V 2.2V @ 45µA 75 nC @ 10 V ±16V 5100 pF @ 25 V - 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR3706CPBF

IRFR3706CPBF

MOSFET N-CH 20V 75A DPAK

Infineon Technologies
3,878 -

RFQ

IRFR3706CPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 75A (Tc) 2.8V, 10V 9mOhm @ 15A, 10V 2V @ 250µA 35 nC @ 4.5 V ±12V 2410 pF @ 10 V - 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7534D1PBF

IRF7534D1PBF

MOSFET P-CH 20V 4.3A MICRO8

Infineon Technologies
3,303 -

RFQ

IRF7534D1PBF

Ficha técnica

Tube FETKY™ Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4.3A (Ta) 2.5V, 4.5V 55mOhm @ 4.3A, 4.5V 1.2V @ 250µA 15 nC @ 5 V ±12V 1066 pF @ 10 V Schottky Diode (Isolated) 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFR120NCPBF

IRFR120NCPBF

MOSFET N-CH 100V 9.4A DPAK

Infineon Technologies
2,882 -

RFQ

IRFR120NCPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 9.4A (Ta) 10V 210mOhm @ 5.6A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 330 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR7807ZCPBF

IRLR7807ZCPBF

MOSFET N-CH 30V 43A DPAK

Infineon Technologies
2,500 -

RFQ

IRLR7807ZCPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 43A (Tc) 4.5V, 10V 13.8mOhm @ 15A, 10V 2.25V @ 250µA 11 nC @ 4.5 V ±20V 780 pF @ 15 V - 40W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR5305CPBF

IRFR5305CPBF

MOSFET P-CH 55V 31A DPAK

Infineon Technologies
3,856 -

RFQ

IRFR5305CPBF

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 55 V 31A (Tc) 10V 65mOhm @ 16A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1200 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR7811WCPBF

IRLR7811WCPBF

MOSFET N-CH 30V 64A DPAK

Infineon Technologies
3,777 -

RFQ

IRLR7811WCPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 64A (Tc) 4.5V, 10V 10.5mOhm @ 15A, 10V 2.5V @ 250µA 31 nC @ 4.5 V ±12V 2260 pF @ 15 V - 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFU4104-701PBF

IRFU4104-701PBF

MOSFET N-CH 40V 42A IPAK

Infineon Technologies
3,319 -

RFQ

IRFU4104-701PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 42A (Tc) 10V 5.5mOhm @ 42A, 10V 4V @ 250µA 89 nC @ 10 V ±20V 2950 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF8707PBF

IRF8707PBF

MOSFET N-CH 30V 11A 8SO

Infineon Technologies
3,262 -

RFQ

IRF8707PBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4.5V, 10V 11.9mOhm @ 11A, 10V 2.35V @ 25µA 9.3 nC @ 4.5 V ±20V 760 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7459PBF

IRF7459PBF

MOSFET N-CH 20V 12A 8SO

Infineon Technologies
2,354 -

RFQ

IRF7459PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 12A (Ta) 2.8V, 10V 9mOhm @ 12A, 10V 2V @ 250µA 35 nC @ 4.5 V ±12V 2480 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRL3713SPBF

IRL3713SPBF

MOSFET N-CH 30V 260A D2PAK

Infineon Technologies
3,984 -

RFQ

IRL3713SPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 260A (Tc) 4.5V, 10V 3mOhm @ 38A, 10V 2.5V @ 250µA 110 nC @ 4.5 V ±20V 5890 pF @ 15 V - 330W (Tc) -55°C ~ 175°C (TJ) Surface Mount
94-3660PBF

94-3660PBF

MOSFET N-CH 100V 4.5A 8SO

Infineon Technologies
2,859 -

RFQ

94-3660PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 4.5A (Ta) - 60mOhm @ 2.7A, 10V 5.5V @ 250µA 50 nC @ 10 V - 930 pF @ 25 V - - - Surface Mount
BSC0804LSATMA1

BSC0804LSATMA1

MOSFET N-CH 100V 40A TDSON-8-6

Infineon Technologies
3,517 -

RFQ

BSC0804LSATMA1

Ficha técnica

Cut Tape (CT) OptiMOS™ 5 Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 40A (Tc) 4.5V, 10V 9.6mOhm @ 20A, 10V 2.3V @ 36µA 14.6 nC @ 4.5 V ±20V 2100 pF @ 50 V - 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSO080P03SHXUMA1

BSO080P03SHXUMA1

MOSFET P-CH 30V 12.6A 8DSO

Infineon Technologies
3,476 -

RFQ

BSO080P03SHXUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 30 V 12.6A (Ta) 10V 8mOhm @ 14.9A, 10V 2.2V @ 250µA 136 nC @ 10 V ±25V 5890 pF @ 25 V - 1.79W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFH8201TRPBF

IRFH8201TRPBF

MOSFET N-CH 25V 49A/100A 8PQFN

Infineon Technologies
3,262 -

RFQ

IRFH8201TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 25 V 49A (Ta), 100A (Tc) 4.5V, 10V 0.95mOhm @ 50A, 10V 2.35V @ 150µA 111 nC @ 10 V ±20V 7330 pF @ 13 V - 3.6W (Ta), 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD50N08S413ATMA1

IPD50N08S413ATMA1

MOSFET N-CH 80V 50A TO252-3

Infineon Technologies
2,400 -

RFQ

IPD50N08S413ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 50A (Tc) 10V 13.2mOhm @ 50A, 10V 4V @ 33µA 30 nC @ 10 V ±20V 1711 pF @ 25 V - 72W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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