Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BSZ240N12NS3GATMA1

BSZ240N12NS3GATMA1

MOSFET N-CH 120V 37A 8TSDSON

Infineon Technologies
2,576 -

RFQ

BSZ240N12NS3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 120 V 37A (Tc) 10V 24mOhm @ 20A, 10V 4V @ 35µA 27 nC @ 10 V ±20V 1900 pF @ 60 V - 66W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFZ44VZSTRRPBF

IRFZ44VZSTRRPBF

MOSFET N-CH 60V 57A D2PAK

Infineon Technologies
3,923 -

RFQ

IRFZ44VZSTRRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 57A (Tc) 10V 12mOhm @ 34A, 10V 4V @ 250µA 65 nC @ 10 V ±20V 1690 pF @ 25 V - 92W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL3715ZSTRRPBF

IRL3715ZSTRRPBF

MOSFET N-CH 20V 50A D2PAK

Infineon Technologies
3,955 -

RFQ

IRL3715ZSTRRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 50A (Tc) 4.5V, 10V 11mOhm @ 15A, 10V 2.55V @ 250µA 11 nC @ 4.5 V ±20V 870 pF @ 10 V - 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3706STRRPBF

IRF3706STRRPBF

MOSFET N-CH 20V 77A D2PAK

Infineon Technologies
2,005 -

RFQ

IRF3706STRRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 77A (Tc) 2.8V, 10V 8.5mOhm @ 15A, 10V 2V @ 250µA 35 nC @ 4.5 V ±12V 2410 pF @ 10 V - 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3708STRRPBF

IRF3708STRRPBF

MOSFET N-CH 30V 62A D2PAK

Infineon Technologies
2,162 -

RFQ

IRF3708STRRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 62A (Tc) 2.8V, 10V 12mOhm @ 15A, 10V 2V @ 250µA 24 nC @ 4.5 V ±12V 2417 pF @ 15 V - 87W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD80R750P7ATMA1

IPD80R750P7ATMA1

MOSFET N-CH 800V 7A TO252-3

Infineon Technologies
3,350 -

RFQ

IPD80R750P7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 800 V 7A (Tc) 10V 750mOhm @ 2.7A, 10V 3.5V @ 140µA 17 nC @ 10 V ±20V 460 pF @ 500 V - 51W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUIRF7640S2TR

AUIRF7640S2TR

MOSFET N-CH 60V 5.8A DIRECTFET

Infineon Technologies
3,700 -

RFQ

AUIRF7640S2TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 5.8A (Ta), 21A (Tc) 10V 36mOhm @ 13A, 10V 5V @ 25µA 11 nC @ 10 V ±20V 450 pF @ 25 V - 2.4W (Ta), 30W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFH7004TRPBF

IRFH7004TRPBF

MOSFET N-CH 40V 100A 8PQFN

Infineon Technologies
3,708 -

RFQ

IRFH7004TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 6V, 10V 1.4mOhm @ 100A, 10V 3.9V @ 150µA 194 nC @ 10 V ±20V 6419 pF @ 25 V - 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD30N06S215ATMA2

IPD30N06S215ATMA2

MOSFET N-CH 55V 30A TO252-31

Infineon Technologies
3,215 -

RFQ

IPD30N06S215ATMA2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 30A (Tc) 10V 14.7mOhm @ 30A, 10V 4V @ 80µA 110 nC @ 10 V ±20V 1485 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB80N04S404ATMA1

IPB80N04S404ATMA1

MOSFET N-CH 40V 80A TO263-3-2

Infineon Technologies
3,542 -

RFQ

IPB80N04S404ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 4.2mOhm @ 80A, 10V 4V @ 35µA 43 nC @ 10 V ±20V 3440 pF @ 25 V - 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB054N06N3GATMA1

IPB054N06N3GATMA1

MOSFET N-CH 60V 80A D2PAK

Infineon Technologies
2,552 -

RFQ

IPB054N06N3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 10V 5.4mOhm @ 80A, 10V 4V @ 58µA 82 nC @ 10 V ±20V 6600 pF @ 30 V - 115W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6617TRPBF

IRF6617TRPBF

MOSFET N-CH 30V 14A DIRECTFET

Infineon Technologies
2,904 -

RFQ

IRF6617TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta), 55A (Tc) 4.5V, 10V 8.1mOhm @ 15A, 10V 2.35V @ 250µA 17 nC @ 4.5 V ±20V 1300 pF @ 15 V - 2.1W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRFH5250DTRPBF

IRFH5250DTRPBF

MOSFET N-CH 25V 40A/100A 8PQFN

Infineon Technologies
2,575 -

RFQ

IRFH5250DTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 25 V 40A (Ta), 100A (Tc) 4.5V, 10V 1.4mOhm @ 50A, 10V 2.35V @ 150µA 83 nC @ 10 V ±20V 6115 pF @ 13 V - 3.6W (Ta), 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFU3910PBF

IRFU3910PBF

MOSFET N-CH 100V 16A IPAK

Infineon Technologies
3,020 -

RFQ

IRFU3910PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 16A (Tc) 10V 115mOhm @ 10A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 640 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPD30P06PGBTMA1

SPD30P06PGBTMA1

MOSFET P-CH 60V 30A TO252-3

Infineon Technologies
2,196 -

RFQ

SPD30P06PGBTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Active P-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 10V 75mOhm @ 21.5A, 10V 4V @ 1.7mA 48 nC @ 10 V ±20V 1535 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFH5250TRPBF

IRFH5250TRPBF

MOSFET N-CH 25V 45A/100A 8PQFN

Infineon Technologies
8,000 -

RFQ

IRFH5250TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 25 V 45A (Ta), 100A (Tc) 4.5V, 10V 1.15mOhm @ 50A, 10V 2.35V @ 150µA 110 nC @ 10 V ±20V 7174 pF @ 13 V - 3.6W (Ta), 160W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSZ018NE2LSATMA1

BSZ018NE2LSATMA1

MOSFET N-CH 25V 23A/40A TSDSON

Infineon Technologies
3,647 -

RFQ

BSZ018NE2LSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 25 V 23A (Ta), 40A (Tc) 4.5V, 10V 1.8mOhm @ 30A, 10V 2V @ 250µA 39 nC @ 10 V ±20V 2800 pF @ 12 V - 2.1W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPN80R600P7ATMA1

IPN80R600P7ATMA1

MOSFET N-CH 800V 8A SOT223

Infineon Technologies
3,693 -

RFQ

IPN80R600P7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 600mOhm @ 3.4A, 10V 3.5V @ 170µA 20 nC @ 10 V ±20V 570 pF @ 500 V - 7.4W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD038N06N3GATMA1

IPD038N06N3GATMA1

MOSFET N-CH 60V 90A TO252-3

Infineon Technologies
3,347 -

RFQ

IPD038N06N3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 10V 3.8mOhm @ 90A, 10V 4V @ 90µA 98 nC @ 10 V ±20V 8000 pF @ 30 V - 188W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD80P03P4L07ATMA1

IPD80P03P4L07ATMA1

MOSFET P-CH 30V 80A TO252-3

Infineon Technologies
443 -

RFQ

IPD80P03P4L07ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Not For New Designs P-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 6.8mOhm @ 80A, 10V 2V @ 130µA 80 nC @ 10 V +5V, -16V 5700 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1500+ Média diária de RFQ
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1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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