Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFR3704ZCPBF

IRFR3704ZCPBF

MOSFET N-CH 20V 60A DPAK

Infineon Technologies
2,863 -

RFQ

IRFR3704ZCPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 60A (Ta) - 8.4mOhm @ 15A, 10V - 14 nC @ 4.5 V - 1190 pF @ 10 V - - -55°C ~ 175°C (TJ) Surface Mount
IRF1405ZSPBF

IRF1405ZSPBF

MOSFET N-CH 55V 75A D2PAK

Infineon Technologies
3,275 -

RFQ

IRF1405ZSPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 4.9mOhm @ 75A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 4780 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR2905CPBF

IRLR2905CPBF

MOSFET N-CH 55V 36A DPAK

Infineon Technologies
3,786 -

RFQ

IRLR2905CPBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 55 V 36A (Ta) - - - - - - - - - Surface Mount
IRF1404ZSPBF

IRF1404ZSPBF

MOSFET N-CH 40V 180A D2PAK

Infineon Technologies
3,104 -

RFQ

IRF1404ZSPBF

Ficha técnica

Bulk,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 40 V 180A (Tc) 10V 3.7mOhm @ 75A, 10V 4V @ 150µA 150 nC @ 10 V ±20V 4340 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPD04N60C3ATMA1

SPD04N60C3ATMA1

MOSFET N-CH 600V 4.5A TO252-3

Infineon Technologies
3,909 -

RFQ

SPD04N60C3ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 4.5A (Tc) 10V 950mOhm @ 2.8A, 10V 3.9V @ 200µA 25 nC @ 10 V ±20V 490 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF7601PBF

IRF7601PBF

MOSFET N-CH 20V 5.7A MICRO8

Infineon Technologies
2,161 -

RFQ

IRF7601PBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 20 V 5.7A (Ta) 2.7V, 4.5V 35mOhm @ 3.8A, 4.5V 700mV @ 250µA (Min) 22 nC @ 4.5 V ±12V 650 pF @ 15 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFS4227PBF

IRFS4227PBF

MOSFET N-CH 200V 62A D2PAK

Infineon Technologies
3,496 -

RFQ

IRFS4227PBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 200 V 62A (Tc) 10V 26mOhm @ 46A, 10V 5V @ 250µA 98 nC @ 10 V ±30V 4600 pF @ 25 V - 330W (Tc) -40°C ~ 175°C (TJ) Surface Mount
IRFU3518-701PBF

IRFU3518-701PBF

MOSFET N-CH 80V 38A IPAK

Infineon Technologies
2,994 -

RFQ

IRFU3518-701PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 80 V 38A (Tc) 10V 29mOhm @ 18A, 10V 4V @ 250µA 56 nC @ 10 V ±20V 1710 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFR3910CPBF

IRFR3910CPBF

MOSFET N-CH 100V 16A DPAK

Infineon Technologies
2,482 -

RFQ

IRFR3910CPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 16A (Tc) 10V 115mOhm @ 10A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 640 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF2903ZSPBF

IRF2903ZSPBF

MOSFET N-CH 30V 75A D2PAK

Infineon Technologies
3,431 -

RFQ

IRF2903ZSPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 10V 2.4mOhm @ 75A, 10V 4V @ 150µA 240 nC @ 10 V ±20V 6320 pF @ 25 V - 231W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF9540NSPBF

IRF9540NSPBF

MOSFET P-CH 100V 23A D2PAK

Infineon Technologies
3,708 -

RFQ

IRF9540NSPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen P-Channel MOSFET (Metal Oxide) 100 V 23A (Tc) 10V 117mOhm @ 14A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 1450 pF @ 25 V - 3.1W (Ta), 110W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR13N20DCPBF

IRFR13N20DCPBF

MOSFET N-CH 200V 13A DPAK

Infineon Technologies
2,245 -

RFQ

IRFR13N20DCPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 13A (Tc) 10V 235mOhm @ 8A, 10V 5.5V @ 250µA 38 nC @ 10 V ±30V 830 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF5210SPBF

IRF5210SPBF

MOSFET P-CH 100V 38A D2PAK

Infineon Technologies
2,102 -

RFQ

IRF5210SPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen P-Channel MOSFET (Metal Oxide) 100 V 38A (Tc) 10V 60mOhm @ 38A, 10V 4V @ 250µA 230 nC @ 10 V ±20V 2780 pF @ 25 V - 3.1W (Ta), 170W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF6216PBF

IRF6216PBF

MOSFET P-CH 150V 2.2A 8SO

Infineon Technologies
3,776 -

RFQ

IRF6216PBF

Ficha técnica

Bulk,Tube HEXFET® Discontinued at Mosen P-Channel MOSFET (Metal Oxide) 150 V 2.2A (Ta) 10V 240mOhm @ 1.3A, 10V 5V @ 250µA 49 nC @ 10 V ±20V 1280 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFS4310PBF

IRFS4310PBF

MOSFET N-CH 100V 130A D2PAK

Infineon Technologies
2,573 -

RFQ

IRFS4310PBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 100 V 130A (Tc) 10V 7mOhm @ 75A, 10V 4V @ 250µA 250 nC @ 10 V ±20V 7670 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB054N08N3GATMA1

IPB054N08N3GATMA1

MOSFET N-CH 80V 80A D2PAK

Infineon Technologies
3,671 -

RFQ

IPB054N08N3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 80A (Tc) 6V, 10V 5.4mOhm @ 80A, 10V 3.5V @ 90µA 69 nC @ 10 V ±20V 4750 pF @ 40 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR12N25DCPBF

IRFR12N25DCPBF

MOSFET N-CH 250V 14A DPAK

Infineon Technologies
3,537 -

RFQ

IRFR12N25DCPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 14A (Tc) 10V 260mOhm @ 8.4A, 10V 5V @ 250µA 35 nC @ 10 V ±30V 810 pF @ 25 V - 144W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR3418PBF

IRFR3418PBF

MOSFET N-CH 80V 70A DPAK

Infineon Technologies
3,965 -

RFQ

IRFR3418PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 80 V 70A (Tc) 10V 14mOhm @ 18A, 10V 5.5V @ 250µA 94 nC @ 10 V ±20V 3510 pF @ 25 V - 3.8W (Ta), 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7425PBF

IRF7425PBF

MOSFET P-CH 20V 15A 8SO

Infineon Technologies
3,214 -

RFQ

IRF7425PBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen P-Channel MOSFET (Metal Oxide) 20 V 15A (Ta) 2.5V, 4.5V 8.2mOhm @ 15A, 4.5V 1.2V @ 250µA 130 nC @ 4.5 V ±12V 7980 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7809PBF

IRF7809PBF

MOSFET N-CH 28V 14.5A 8SO

Infineon Technologies
2,176 -

RFQ

IRF7809PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 28 V 14.5A (Ta) 4.5V - 1V @ 250µA - ±12V - - - -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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