Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFS23N20DTRRP

IRFS23N20DTRRP

MOSFET N-CH 200V 24A D2PAK

Infineon Technologies
2,585 -

RFQ

IRFS23N20DTRRP

Ficha técnica

Tape & Reel (TR) HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 200 V 24A (Tc) 10V 100mOhm @ 14A, 10V 5.5V @ 250µA 86 nC @ 10 V ±30V 1960 pF @ 25 V - 3.8W (Ta), 170W (Tc) - Surface Mount
BSC016N03MSGATMA1

BSC016N03MSGATMA1

MOSFET N-CH 30V 28A/100A TDSON

Infineon Technologies
15,000 -

RFQ

BSC016N03MSGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 28A (Ta), 100A (Tc) 4.5V, 10V 1.6mOhm @ 30A, 10V 2V @ 250µA 173 nC @ 10 V ±20V 13000 pF @ 15 V - 2.5W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPS60R600PFD7SAKMA1

IPS60R600PFD7SAKMA1

MOSFET N-CH 650V 6A TO251-3

Infineon Technologies
2,626 -

RFQ

Tube CoolMOS™PFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 6A (Tc) 10V 600mOhm @ 1.7A, 10V 4.5V @ 80µA 8.5 nC @ 10 V ±20V 344 pF @ 400 V - 31W (Tc) -40°C ~ 150°C (TJ) Through Hole
BSC16DN25NS3GATMA1

BSC16DN25NS3GATMA1

MOSFET N-CH 250V 10.9A TDSON-8-5

Infineon Technologies
3,521 -

RFQ

BSC16DN25NS3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 250 V 10.9A (Tc) 10V 165mOhm @ 5.5A, 10V 4V @ 32µA 11.4 nC @ 10 V ±20V 920 pF @ 100 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPA70R900P7SXKSA1

IPA70R900P7SXKSA1

MOSFET N-CH 700V 6A TO220

Infineon Technologies
3,226 -

RFQ

IPA70R900P7SXKSA1

Ficha técnica

Bulk,Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 700 V 6A (Tc) 10V 900mOhm @ 1.1A, 10V 3.5V @ 60µA 6.8 nC @ 400 V ±16V 211 pF @ 400 V - 20.5W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPLK60R360PFD7ATMA1

IPLK60R360PFD7ATMA1

MOSFET N-CH 600V 13A THIN-PAK

Infineon Technologies
3,607 -

RFQ

IPLK60R360PFD7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ PFD7 Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 360mOhm @ 2.9A, 10V 4.5V @ 140µA 12.7 nC @ 10 V ±20V 534 pF @ 400 V - 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF3710ZSTRRPBF

IRF3710ZSTRRPBF

MOSFET N-CH 100V 59A D2PAK

Infineon Technologies
3,306 -

RFQ

IRF3710ZSTRRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 59A (Tc) 10V 18mOhm @ 35A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 2900 pF @ 25 V - 160W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS4610TRRPBF

IRFS4610TRRPBF

MOSFET N-CH 100V 73A D2PAK

Infineon Technologies
2,778 -

RFQ

IRFS4610TRRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 73A (Tc) 10V 14mOhm @ 44A, 10V 4V @ 100µA 140 nC @ 10 V ±20V 3550 pF @ 50 V - 190W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL7833STRRPBF

IRL7833STRRPBF

MOSFET N-CH 30V 150A D2PAK

Infineon Technologies
3,970 -

RFQ

IRL7833STRRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 150A (Tc) 4.5V, 10V 3.8mOhm @ 38A, 10V 2.3V @ 250µA 47 nC @ 4.5 V ±20V 4170 pF @ 15 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL2505STRRPBF

IRL2505STRRPBF

MOSFET N-CH 55V 104A D2PAK

Infineon Technologies
3,516 -

RFQ

IRL2505STRRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 104A (Tc) 4V, 10V 8mOhm @ 54A, 10V 2V @ 250µA 130 nC @ 5 V ±16V 5000 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF8010STRRPBF

IRF8010STRRPBF

MOSFET N-CH 100V 80A D2PAK

Infineon Technologies
3,668 -

RFQ

IRF8010STRRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 80A (Tc) 10V 15mOhm @ 45A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 3830 pF @ 25 V - 260W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR120NCTRLPBF

IRFR120NCTRLPBF

MOSFET N-CH 100V 9.4A DPAK

Infineon Technologies
3,796 -

RFQ

IRFR120NCTRLPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 9.4A (Ta) 10V 210mOhm @ 5.6A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 330 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL3716STRRPBF

IRL3716STRRPBF

MOSFET N-CH 20V 180A D2PAK

Infineon Technologies
3,973 -

RFQ

IRL3716STRRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 180A (Tc) 4.5V, 10V 4mOhm @ 90A, 10V 3V @ 250µA 79 nC @ 4.5 V ±20V 5090 pF @ 10 V - 210W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL3103STRRPBF

IRL3103STRRPBF

MOSFET N-CH 30V 64A D2PAK

Infineon Technologies
2,478 -

RFQ

IRL3103STRRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 64A (Tc) 4.5V, 10V 12mOhm @ 34A, 10V 1V @ 250µA 33 nC @ 4.5 V ±16V 1650 pF @ 25 V - 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF1503STRRPBF

IRF1503STRRPBF

MOSFET N-CH 30V 75A D2PAK

Infineon Technologies
2,470 -

RFQ

IRF1503STRRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 10V 3.3mOhm @ 140A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 5730 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPC100N04S5L1R1ATMA1

IPC100N04S5L1R1ATMA1

MOSFET N-CH 40V 100A 8TDSON-34

Infineon Technologies
3,503 -

RFQ

IPC100N04S5L1R1ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 4.5V, 10V 1.1mOhm @ 50A, 10V 2V @ 90µA 140 nC @ 10 V ±16V 8250 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS59N10DTRRP

IRFS59N10DTRRP

MOSFET N-CH 100V 59A D2PAK

Infineon Technologies
2,918 -

RFQ

IRFS59N10DTRRP

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 59A (Tc) 10V 25mOhm @ 35.4A, 10V 5.5V @ 250µA 114 nC @ 10 V ±30V 2450 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS31N20DTRRP

IRFS31N20DTRRP

MOSFET N-CH 200V 31A D2PAK

Infineon Technologies
3,178 -

RFQ

IRFS31N20DTRRP

Ficha técnica

Tape & Reel (TR) HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 200 V 31A (Tc) 10V 82mOhm @ 18A, 10V 5.5V @ 250µA 107 nC @ 10 V ±30V 2370 pF @ 25 V - 3.1W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPC100N04S51R2ATMA1

IPC100N04S51R2ATMA1

MOSFET N-CH 40V 100A 8TDSON-34

Infineon Technologies
2,519 -

RFQ

IPC100N04S51R2ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 7V, 10V 1.2mOhm @ 50A, 10V 3.4V @ 90µA 131 nC @ 10 V ±20V 7650 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLIZ34NPBF

IRLIZ34NPBF

MOSFET N-CH 55V 22A TO220AB FP

Infineon Technologies
2,088 -

RFQ

IRLIZ34NPBF

Ficha técnica

Tube HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 55 V 22A (Tc) 4V, 10V 35mOhm @ 12A, 10V 2V @ 250µA 25 nC @ 5 V ±16V 880 pF @ 25 V - 37W (Tc) -55°C ~ 175°C (TJ) Through Hole
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1800+ Fabricantes em todo o mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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