Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFR3707ZTRRPBF

IRFR3707ZTRRPBF

MOSFET N-CH 30V 56A DPAK

Infineon Technologies
3,627 -

RFQ

IRFR3707ZTRRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 56A (Tc) 4.5V, 10V 9.5mOhm @ 15A, 10V 2.25V @ 25µA 14 nC @ 4.5 V ±20V 1150 pF @ 15 V - 50W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR3704ZTRRPBF

IRFR3704ZTRRPBF

MOSFET N-CH 20V 60A DPAK

Infineon Technologies
2,493 -

RFQ

IRFR3704ZTRRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 60A (Tc) 4.5V, 10V 8.4mOhm @ 15A, 10V 2.55V @ 250µA 14 nC @ 4.5 V ±20V 1190 pF @ 10 V - 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR3704ZTRLPBF

IRFR3704ZTRLPBF

MOSFET N-CH 20V 60A DPAK

Infineon Technologies
3,581 -

RFQ

IRFR3704ZTRLPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 60A (Tc) 4.5V, 10V 8.4mOhm @ 15A, 10V 2.55V @ 250µA 14 nC @ 4.5 V ±20V 1190 pF @ 10 V - 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR2705TRRPBF

IRLR2705TRRPBF

MOSFET N-CH 55V 28A DPAK

Infineon Technologies
2,426 -

RFQ

IRLR2705TRRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 28A (Tc) 4V, 10V 40mOhm @ 17A, 10V 2V @ 250µA 25 nC @ 5 V ±16V 880 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR3708TRLPBF

IRFR3708TRLPBF

MOSFET N-CH 30V 61A DPAK

Infineon Technologies
3,387 -

RFQ

IRFR3708TRLPBF

Ficha técnica

Tape & Reel (TR),Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 61A (Tc) 2.8V, 10V 12.5mOhm @ 15A, 10V 2V @ 250µA 24 nC @ 4.5 V ±12V 2417 pF @ 15 V - 87W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB50N10S3L16ATMA1

IPB50N10S3L16ATMA1

MOSFET N-CH 100V 50A TO263-3

Infineon Technologies
2,877 -

RFQ

IPB50N10S3L16ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 50A (Tc) 4.5V, 10V 15.4mOhm @ 50A, 10V 2.4V @ 60µA 64 nC @ 10 V ±20V 4180 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR3707TRLPBF

IRFR3707TRLPBF

MOSFET N-CH 30V 61A DPAK

Infineon Technologies
3,658 -

RFQ

IRFR3707TRLPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 61A (Tc) 4.5V, 10V 13mOhm @ 15A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V 1990 pF @ 15 V - 87W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR3802TRLPBF

IRLR3802TRLPBF

MOSFET N-CH 12V 84A DPAK

Infineon Technologies
2,129 -

RFQ

IRLR3802TRLPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 12 V 84A (Tc) 2.8V, 4.5V 8.5mOhm @ 15A, 4.5V 1.9V @ 250µA 41 nC @ 5 V ±12V 2490 pF @ 6 V - 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR7821TRLPBF

IRLR7821TRLPBF

MOSFET N-CH 30V 65A DPAK

Infineon Technologies
3,671 -

RFQ

IRLR7821TRLPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 65A (Tc) 4.5V, 10V 10mOhm @ 15A, 10V 1V @ 250µA 14 nC @ 4.5 V ±20V 1030 pF @ 15 V - 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR7821CTRRPBF

IRLR7821CTRRPBF

MOSFET N-CH 30V 65A DPAK

Infineon Technologies
3,969 -

RFQ

IRLR7821CTRRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 65A (Tc) 4.5V, 10V 10mOhm @ 15A, 10V 1V @ 250µA 14 nC @ 4.5 V ±20V 1030 pF @ 15 V - 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR7821TRRPBF

IRLR7821TRRPBF

MOSFET N-CH 30V 65A DPAK

Infineon Technologies
2,833 -

RFQ

IRLR7821TRRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 65A (Tc) 4.5V, 10V 10mOhm @ 15A, 10V 1V @ 250µA 14 nC @ 4.5 V ±20V 1030 pF @ 15 V - 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR2905ZTRRPBF

IRFR2905ZTRRPBF

MOSFET N-CH 55V 42A DPAK

Infineon Technologies
2,255 -

RFQ

IRFR2905ZTRRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 10V 14.5mOhm @ 36A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 1380 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR3504TRLPBF

IRFR3504TRLPBF

MOSFET N-CH 40V 30A DPAK

Infineon Technologies
2,778 -

RFQ

IRFR3504TRLPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 30A (Tc) 10V 9.2mOhm @ 30A, 10V 4V @ 250µA 71 nC @ 10 V ±20V 2150 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR2905ZTRLPBF

IRFR2905ZTRLPBF

MOSFET N-CH 55V 42A DPAK

Infineon Technologies
3,125 -

RFQ

IRFR2905ZTRLPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 10V 14.5mOhm @ 36A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 1380 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPAN60R800CEXKSA1

IPAN60R800CEXKSA1

MOSFET N-CH 600V 8.4A TO220

Infineon Technologies
2,723 -

RFQ

IPAN60R800CEXKSA1

Ficha técnica

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 8.4A (Tc) 10V 800mOhm @ 2A, 10V 3.5V @ 170µA 17.2 nC @ 10 V ±20V 373 pF @ 100 V Super Junction 27W (Tc) -40°C ~ 150°C (TJ) Through Hole
IRLR3705ZTRPBF

IRLR3705ZTRPBF

MOSFET N-CH 55V 42A DPAK

Infineon Technologies
2,905 -

RFQ

IRLR3705ZTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 4.5V, 10V 8mOhm @ 42A, 10V 3V @ 250µA 66 nC @ 5 V ±16V 2900 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6613TRPBF

IRF6613TRPBF

MOSFET N-CH 40V 23A DIRECTFET

Infineon Technologies
2,270 -

RFQ

IRF6613TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 23A (Ta), 150A (Tc) 4.5V, 10V 3.4mOhm @ 23A, 10V 2.25V @ 250µA 63 nC @ 4.5 V ±20V 5950 pF @ 15 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPD12CN10NGATMA1

IPD12CN10NGATMA1

MOSFET N-CH 100V 67A TO252-3

Infineon Technologies
3,920 -

RFQ

IPD12CN10NGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 67A (Tc) 10V 12.4mOhm @ 67A, 10V 4V @ 83µA 65 nC @ 10 V ±20V 4320 pF @ 50 V - 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPAW60R600P7SXKSA1

IPAW60R600P7SXKSA1

MOSFET N-CH 600V 6A TO220

Infineon Technologies
3,889 -

RFQ

IPAW60R600P7SXKSA1

Ficha técnica

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 6A (Tc) 10V 600mOhm @ 1.7A, 10V 4V @ 80µA 9 nC @ 10 V ±20V 363 pF @ 400 V - 21W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPU95R3K7P7AKMA1

IPU95R3K7P7AKMA1

MOSFET N-CH 950V 2A TO251-3

Infineon Technologies
2,047 -

RFQ

IPU95R3K7P7AKMA1

Ficha técnica

Bulk,Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 950 V 2A (Tc) 10V 3.7Ohm @ 800mA, 10V 3.5V @ 40µA 6 nC @ 10 V ±20V 196 pF @ 400 V - 22W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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