Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFR4104TRRPBF

IRFR4104TRRPBF

MOSFET N-CH 40V 42A DPAK

Infineon Technologies
2,204 -

RFQ

IRFR4104TRRPBF

Ficha técnica

Tape & Reel (TR),Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 42A (Tc) 10V 5.5mOhm @ 42A, 10V 4V @ 250µA 89 nC @ 10 V ±20V 2950 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR2905TRRPBF

IRLR2905TRRPBF

MOSFET N-CH 55V 42A DPAK

Infineon Technologies
2,630 -

RFQ

IRLR2905TRRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 4V, 10V 27mOhm @ 25A, 10V 2V @ 250µA 48 nC @ 5 V ±16V 1700 pF @ 25 V - 110W (Tc) - Surface Mount
IRFR3710ZTRRPBF

IRFR3710ZTRRPBF

MOSFET N-CH 100V 42A DPAK

Infineon Technologies
2,535 -

RFQ

IRFR3710ZTRRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) 10V 18mOhm @ 33A, 10V 4V @ 250µA 100 nC @ 10 V ±20V 2930 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR8503TRLPBF

IRLR8503TRLPBF

MOSFET N-CH 30V 44A DPAK

Infineon Technologies
2,787 -

RFQ

IRLR8503TRLPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 44A (Tc) 4.5V, 10V 16mOhm @ 15A, 10V 3V @ 250µA 20 nC @ 5 V ±20V 1650 pF @ 25 V - 62W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLR7833CTRLPBF

IRLR7833CTRLPBF

MOSFET N-CH 30V 140A DPAK

Infineon Technologies
2,329 -

RFQ

IRLR7833CTRLPBF

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 140A (Ta) 4.5V, 10V - - - ±20V - - 140W (Tc) - Surface Mount
IRLR7833CTRRPBF

IRLR7833CTRRPBF

MOSFET N-CH 30V 140A DPAK

Infineon Technologies
3,286 -

RFQ

IRLR7833CTRRPBF

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 140A (Ta) 4.5V, 10V - - - ±20V - - 140W (Tc) - Surface Mount
IPD90P04P405ATMA2

IPD90P04P405ATMA2

MOSFET P-CH 40V 90A TO252-3

Infineon Technologies
3,396 -

RFQ

IPD90P04P405ATMA2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS®-P2 Active P-Channel MOSFET (Metal Oxide) 40 V 90A (Tc) 10V 4.7mOhm @ 90A, 10V 4V @ 250µA 154 nC @ 10 V ±20V 10300 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD90P04P4L04ATMA2

IPD90P04P4L04ATMA2

MOSFET P-CH 40V 90A TO252-3

Infineon Technologies
3,331 -

RFQ

IPD90P04P4L04ATMA2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS®-P2 Active P-Channel MOSFET (Metal Oxide) 40 V 90A (Tc) 4.5V, 10V 4.3mOhm @ 90A, 10V 2.2V @ 250µA 176 nC @ 10 V +5V, -16V 11570 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF1404ZSTRLPBF

IRF1404ZSTRLPBF

MOSFET N-CH 40V 180A D2PAK

Infineon Technologies
2,938 -

RFQ

IRF1404ZSTRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 180A (Tc) 10V 3.7mOhm @ 75A, 10V 4V @ 150µA 150 nC @ 10 V ±20V 4340 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD60R280CFD7ATMA1

IPD60R280CFD7ATMA1

MOSFET N-CH 650V 9A TO252-3

Infineon Technologies
3,356 -

RFQ

IPD60R280CFD7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 9A (Tc) 10V 280mOhm @ 3.6A, 10V 4.5V @ 180µA 18 nC @ 10 V ±20V 807 pF @ 400 V - 51W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IAUC120N04S6L008ATMA1

IAUC120N04S6L008ATMA1

MOSFET N-CH 40V 120A 8TDSON-33

Infineon Technologies
2,563 -

RFQ

IAUC120N04S6L008ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 4.5V, 10V 0.8mOhm @ 60A, 10V 2V @ 90µA 140 nC @ 10 V ±16V 7910 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD068N10N3GATMA1

IPD068N10N3GATMA1

MOSFET N-CH 100V 90A TO252-3

Infineon Technologies
2,657 -

RFQ

IPD068N10N3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 90A (Tc) 6V, 10V 6.8mOhm @ 90A, 10V 3.5V @ 90µA 68 nC @ 10 V ±20V 4910 pF @ 50 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB067N08N3GATMA1

IPB067N08N3GATMA1

MOSFET N-CH 80V 80A D2PAK

Infineon Technologies
3,320 -

RFQ

IPB067N08N3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 80A (Tc) 6V, 10V 6.7mOhm @ 73A, 10V 3.5V @ 73µA 56 nC @ 10 V ±20V 3840 pF @ 40 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP180N10N3GXKSA1

IPP180N10N3GXKSA1

MOSFET N-CH 100V 43A TO220-3

Infineon Technologies
2,529 -

RFQ

IPP180N10N3GXKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 43A (Tc) 6V, 10V 18mOhm @ 33A, 10V 3.5V @ 33µA 25 nC @ 10 V ±20V 1800 pF @ 50 V - 71W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPAN70R450P7SXKSA1

IPAN70R450P7SXKSA1

MOSFET N-CH 700V 10A TO220

Infineon Technologies
2,683 -

RFQ

IPAN70R450P7SXKSA1

Ficha técnica

Bulk,Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 700 V 10A (Tc) 10V 450mOhm @ 2.3A, 10V 3.5V @ 120µA 13.1 nC @ 10 V ±16V 424 pF @ 400 V - 22.7W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPD90N10S4L06ATMA1

IPD90N10S4L06ATMA1

MOSFET N-CH 100V 90A TO252-3

Infineon Technologies
3,106 -

RFQ

IPD90N10S4L06ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 90A (Tc) 4.5V, 10V 6.6mOhm @ 90A, 10V 2.1V @ 90µA 98 nC @ 10 V ±16V 6250 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP50R380CEXKSA1

IPP50R380CEXKSA1

MOSFET N-CH 500V 9.9A TO220-3

Infineon Technologies
2,856 -

RFQ

IPP50R380CEXKSA1

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 500 V 9.9A (Tc) 13V 380mOhm @ 3.2A, 13V 3.5V @ 260µA 24.8 nC @ 10 V ±20V 584 pF @ 100 V Super Junction 73W (Tc) -55°C ~ 150°C (TJ) Through Hole
BSC011N03LSTATMA1

BSC011N03LSTATMA1

MOSFET N-CH 30V 39A/100A TDSON

Infineon Technologies
2,109 -

RFQ

BSC011N03LSTATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 39A (Ta), 100A (Tc) 4.5V, 10V 1.1mOhm @ 30A, 10V 2V @ 250µA 48 nC @ 4.5 V ±20V 6300 pF @ 15 V - 3W (Ta), 115W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD90N08S405ATMA1

IPD90N08S405ATMA1

MOSFET N-CH 80V 90A TO252-3

Infineon Technologies
2,723 -

RFQ

IPD90N08S405ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 90A (Tc) 10V 5.3mOhm @ 90A, 10V 4V @ 90µA 68 nC @ 10 V ±20V 4800 pF @ 25 V - 144W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA041N04NGXKSA1

IPA041N04NGXKSA1

MOSFET N-CH 40V 70A TO220-FP

Infineon Technologies
2,591 -

RFQ

IPA041N04NGXKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 70A (Tc) 10V 4.1mOhm @ 70A, 10V 4V @ 45µA 56 nC @ 10 V ±20V 4500 pF @ 20 V - 35W (Tc) -55°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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