Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF1010EZPBF

IRF1010EZPBF

MOSFET N-CH 60V 75A TO220AB

Infineon Technologies
7,900 -

RFQ

IRF1010EZPBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 10V 8.5mOhm @ 51A, 10V 4V @ 100µA 86 nC @ 10 V ±20V 2810 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3710ZPBF

IRF3710ZPBF

MOSFET N-CH 100V 59A TO220AB

Infineon Technologies
3,662 -

RFQ

IRF3710ZPBF

Ficha técnica

Bulk,Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 59A (Tc) 10V 18mOhm @ 35A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 2900 pF @ 25 V - 160W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP057N06N3GXKSA1

IPP057N06N3GXKSA1

MOSFET N-CH 60V 80A TO220-3

Infineon Technologies
3,587 -

RFQ

IPP057N06N3GXKSA1

Ficha técnica

Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 10V 5.7mOhm @ 80A, 10V 4V @ 58µA 82 nC @ 10 V ±20V 6600 pF @ 30 V - 115W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPA65R400CEXKSA1

IPA65R400CEXKSA1

MOSFET N-CH 650V TO220

Infineon Technologies
3,691 -

RFQ

IPA65R400CEXKSA1

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 15.1A (Tc) 10V 400mOhm @ 3.2A, 10V 3.5V @ 320µA 39 nC @ 10 V ±20V 710 pF @ 100 V Super Junction 31W (Tc) -55°C ~ 150°C (TJ) Through Hole
BSC079N10NSGATMA1

BSC079N10NSGATMA1

MOSFET N-CH 100V 13.4A 8TDSON

Infineon Technologies
3,984 -

RFQ

BSC079N10NSGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 13.4A (Ta), 100A (Tc) 10V 7.9mOhm @ 50A, 10V 4V @ 110µA 87 nC @ 10 V ±20V 5900 pF @ 50 V - 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPAN60R360PFD7SXKSA1

IPAN60R360PFD7SXKSA1

MOSFET N-CH 650V 10A TO220

Infineon Technologies
3,556 -

RFQ

IPAN60R360PFD7SXKSA1

Ficha técnica

Tube CoolMOS™PFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 10A (Tc) 10V 360mOhm @ 2.9A, 10V 4.5V @ 140µA 12.7 nC @ 10 V ±20V 534 pF @ 400 V - 23W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPA60R950C6XKSA1

IPA60R950C6XKSA1

MOSFET N-CH 600V 4.4A TO220-FP

Infineon Technologies
3,274 -

RFQ

IPA60R950C6XKSA1

Ficha técnica

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 4.4A (Tc) 10V 950mOhm @ 1.5A, 10V 3.5V @ 130µA 13 nC @ 10 V ±20V 280 pF @ 100 V - 26W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF60B217

IRF60B217

MOSFET N-CH 60V 60A TO220AB

Infineon Technologies
2,645 -

RFQ

IRF60B217

Ficha técnica

Bulk,Tube StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 60A (Tc) 6V, 10V 9mOhm @ 36A, 10V 3.7V @ 50µA 66 nC @ 10 V ±20V 2230 pF @ 25 V - 83W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB80N06S2L07ATMA3

IPB80N06S2L07ATMA3

MOSFET N-CH 55V 80A TO263-3

Infineon Technologies
2,369 -

RFQ

IPB80N06S2L07ATMA3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 4.5V, 10V 6.7mOhm @ 60A, 10V 2V @ 150µA 130 nC @ 10 V ±20V 3160 pF @ 25 V - 210W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFIZ34NPBF

IRFIZ34NPBF

MOSFET N-CH 55V 21A TO220AB FP

Infineon Technologies
2,870 -

RFQ

IRFIZ34NPBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 21A (Tc) 10V 40mOhm @ 11A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 700 pF @ 25 V - 37W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB180N04S401ATMA1

IPB180N04S401ATMA1

MOSFET N-CH 40V 180A TO263-7

Infineon Technologies
3,800 -

RFQ

IPB180N04S401ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 180A (Tc) 10V 1.3mOhm @ 100A, 10V 4V @ 140µA 176 nC @ 10 V ±20V 14000 pF @ 25 V - 188W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA80R900P7XKSA1

IPA80R900P7XKSA1

MOSFET N-CH 800V 6A TO220

Infineon Technologies
3,493 -

RFQ

IPA80R900P7XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Tc) 10V 900mOhm @ 2.2A, 10V 3.5V @ 110µA 15 nC @ 10 V ±20V 350 pF @ 500 V - 26W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFS4610TRLPBF

IRFS4610TRLPBF

MOSFET N-CH 100V 73A D2PAK

Infineon Technologies
2,944 -

RFQ

IRFS4610TRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 73A (Tc) 10V 14mOhm @ 44A, 10V 4V @ 100µA 140 nC @ 10 V ±20V 3550 pF @ 50 V - 190W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3205ZPBF

IRF3205ZPBF

MOSFET N-CH 55V 75A TO220AB

Infineon Technologies
1,990 -

RFQ

IRF3205ZPBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 6.5mOhm @ 66A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 3450 pF @ 25 V - 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
BSC026N08NS5ATMA1

BSC026N08NS5ATMA1

MOSFET N-CH 80V 23A/100A TDSON

Infineon Technologies
2,006 -

RFQ

BSC026N08NS5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 23A (Ta), 100A (Tc) 6V, 10V 2.6mOhm @ 50A, 10V 3.8V @ 115µA 92 nC @ 10 V ±20V 6800 pF @ 40 V - 2.5W (Ta), 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFS7734TRLPBF

IRFS7734TRLPBF

MOSFET N-CH 75V 183A D2PAK

Infineon Technologies
2,602 -

RFQ

IRFS7734TRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 75 V 183A (Tc) 6V, 10V 3.5mOhm @ 100A, 10V 3.7V @ 250µA 270 nC @ 10 V ±20V 10150 pF @ 25 V - 290W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB120N04S401ATMA1

IPB120N04S401ATMA1

MOSFET N-CH 40V 120A D2PAK

Infineon Technologies
3,403 -

RFQ

IPB120N04S401ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 1.5mOhm @ 100A, 10V 4V @ 140µA 176 nC @ 10 V ±20V 14000 pF @ 25 V - 188W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB120N06S402ATMA2

IPB120N06S402ATMA2

MOSFET N-CH 60V 120A TO263-3

Infineon Technologies
2,117 -

RFQ

IPB120N06S402ATMA2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 2.8mOhm @ 100A, 10V 4V @ 140µA 195 nC @ 10 V ±20V 15750 pF @ 25 V - 188W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS7534TRL7PP

IRFS7534TRL7PP

MOSFET N CH 60V 240A D2PAK

Infineon Technologies
2,024 -

RFQ

IRFS7534TRL7PP

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 240A (Tc) 6V, 10V 1.95mOhm @ 100A, 10V 3.7V @ 250µA 300 nC @ 10 V ±20V 9990 pF @ 25 V - 290W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF1018ESLPBF

IRF1018ESLPBF

MOSFET N-CH 60V 79A TO262

Infineon Technologies
3,586 -

RFQ

IRF1018ESLPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 79A (Tc) 10V 8.4mOhm @ 47A, 10V 4V @ 100µA 69 nC @ 10 V ±20V 2290 pF @ 50 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
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1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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