Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SPP15P10PLHXKSA1

SPP15P10PLHXKSA1

MOSFET P-CH 100V 15A TO220-3

Infineon Technologies
2,208 -

RFQ

SPP15P10PLHXKSA1

Ficha técnica

Tube SIPMOS® Active P-Channel MOSFET (Metal Oxide) 100 V 15A (Tc) 4.5V, 10V 200mOhm @ 11.3A, 10V 2V @ 1.54mA 62 nC @ 10 V ±20V 1490 pF @ 25 V - 128W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPP04N80C3XKSA1

SPP04N80C3XKSA1

MOSFET N-CH 800V 4A TO220-3

Infineon Technologies
3,822 -

RFQ

SPP04N80C3XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 800 V 4A (Tc) 10V 1.3Ohm @ 2.5A, 10V 3.9V @ 240µA 31 nC @ 10 V ±20V 570 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA80R750P7XKSA1

IPA80R750P7XKSA1

MOSFET N-CHANNEL 800V 7A TO220

Infineon Technologies
2,311 -

RFQ

IPA80R750P7XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 800 V 7A (Tc) 10V 750mOhm @ 2.7A, 10V 3.5V @ 140µA 17 nC @ 10 V ±20V 460 pF @ 500 V - 27W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP083N10N5AKSA1

IPP083N10N5AKSA1

MOSFET N-CH 100V 73A TO220-3

Infineon Technologies
2,685 -

RFQ

IPP083N10N5AKSA1

Ficha técnica

Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 73A (Tc) 6V, 10V 8.3mOhm @ 73A, 10V 3.8V @ 49µA 37 nC @ 10 V ±20V 2730 pF @ 50 V - 100W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB65R190C7ATMA2

IPB65R190C7ATMA2

MOSFET N-CH 650V 13A TO263-3

Infineon Technologies
3,656 -

RFQ

IPB65R190C7ATMA2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 650 V 13A (Tc) 10V 190mOhm @ 5.7A, 10V 4V @ 290µA 23 nC @ 10 V ±20V 1150 pF @ 400 V - 72W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPA95R1K2P7XKSA1

IPA95R1K2P7XKSA1

MOSFET N-CH 950V 6A TO220

Infineon Technologies
2,073 -

RFQ

IPA95R1K2P7XKSA1

Ficha técnica

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 950 V 6A (Tc) 10V 1.2Ohm @ 2.7A, 10V 3.5V @ 140µA 15 nC @ 10 V ±20V 478 pF @ 400 V - 27W (Tc) -55°C ~ 150°C (TJ) Through Hole
BSC010N04LSIATMA1

BSC010N04LSIATMA1

MOSFET N-CH 40V 37A/100A TDSON

Infineon Technologies
3,381 -

RFQ

BSC010N04LSIATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 37A (Ta), 100A (Tc) 4.5V, 10V 1.05mOhm @ 50A, 10V 2V @ 250µA 87 nC @ 10 V ±20V 6200 pF @ 20 V Schottky Diode (Body) 2.5W (Ta), 139W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB120P04P4L03ATMA1

IPB120P04P4L03ATMA1

MOSFET P-CH 40V 120A D2PAK

Infineon Technologies
2,371 -

RFQ

IPB120P04P4L03ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Not For New Designs P-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 4.5V, 10V 3.1mOhm @ 100A, 10V 2.2V @ 340µA 234 nC @ 10 V ±16V 15000 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB120P04P4L03ATMA2

IPB120P04P4L03ATMA2

MOSFET P-CH 40V 120A TO263-3

Infineon Technologies
2,537 -

RFQ

IPB120P04P4L03ATMA2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS®-P2 Active P-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 4.5V, 10V 3.4mOhm @ 100A, 10V 2.2V @ 340µA 234 nC @ 10 V +5V, -16V 15000 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF1324STRL-7PP

IRF1324STRL-7PP

MOSFET N-CH 24V 240A D2PAK

Infineon Technologies
3,520 -

RFQ

IRF1324STRL-7PP

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 24 V 240A (Tc) 10V 1mOhm @ 160A, 10V 4V @ 250µA 252 nC @ 10 V ±20V 7700 pF @ 19 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF2903ZSTRLP

IRF2903ZSTRLP

MOSFET N-CH 30V 75A D2PAK

Infineon Technologies
2,084 -

RFQ

IRF2903ZSTRLP

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 10V 2.4mOhm @ 75A, 10V 4V @ 150µA 240 nC @ 10 V ±20V 6320 pF @ 25 V - 290W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFSL38N20DPBF

IRFSL38N20DPBF

MOSFET N-CH 200V 43A TO262

Infineon Technologies
724 -

RFQ

IRFSL38N20DPBF

Ficha técnica

Bulk,Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 43A (Tc) - 54mOhm @ 26A, 10V 5V @ 250µA 91 nC @ 10 V - 2900 pF @ 25 V - - - Through Hole
IRL3715ZSTRLPBF

IRL3715ZSTRLPBF

MOSFET N-CH 20V 50A D2PAK

Infineon Technologies
3,862 -

RFQ

IRL3715ZSTRLPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 50A (Tc) 4.5V, 10V 11mOhm @ 15A, 10V 2.55V @ 250µA 11 nC @ 4.5 V ±20V 870 pF @ 10 V - 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR3806PBF

IRFR3806PBF

MOSFET N-CH 60V 43A DPAK

Infineon Technologies
3,057 -

RFQ

IRFR3806PBF

Ficha técnica

Bulk,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 43A (Tc) 10V 15.8mOhm @ 25A, 10V 4V @ 50µA 30 nC @ 10 V ±20V 1150 pF @ 50 V - 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFSL4310PBF

IRFSL4310PBF

MOSFET N-CH 100V 130A TO262

Infineon Technologies
3,701 -

RFQ

IRFSL4310PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 130A (Tc) 10V 7mOhm @ 75A, 10V 4V @ 250µA 250 nC @ 10 V ±20V 7670 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
64-2096PBF

64-2096PBF

MOSFET N-CH 75V 160A D2PAK

Infineon Technologies
3,332 -

RFQ

64-2096PBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 160A (Tc) 10V 3.8mOhm @ 110A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 7580 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6674TR1PBF

IRF6674TR1PBF

MOSFET N-CH 60V 13.4A DIRECTFET

Infineon Technologies
3,558 -

RFQ

IRF6674TR1PBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 13.4A (Ta), 67A (Tc) 10V 11mOhm @ 13.4A, 10V 4.9V @ 100µA 36 nC @ 10 V ±20V 1350 pF @ 25 V - 3.6W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6710S2TR1PBF

IRF6710S2TR1PBF

MOSFET N-CH 25V 12A DIRECTFET

Infineon Technologies
3,792 -

RFQ

IRF6710S2TR1PBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 25 V 12A (Ta), 37A (Tc) 4.5V, 10V 5.9mOhm @ 12A, 10V 2.4V @ 25µA 13 nC @ 4.5 V ±20V 1190 pF @ 13 V - 1.8W (Ta), 15W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6712STR1PBF

IRF6712STR1PBF

MOSFET N-CH 25V 17A DIRECTFET

Infineon Technologies
2,287 -

RFQ

IRF6712STR1PBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 25 V 17A (Ta), 68A (Tc) 4.5V, 10V 4.9mOhm @ 17A, 10V 2.4V @ 50µA 18 nC @ 4.5 V ±20V 1570 pF @ 13 V - 2.2W (Ta), 36W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPP040N06N3GXKSA1

IPP040N06N3GXKSA1

MOSFET N-CH 60V 90A TO220-3

Infineon Technologies
3,388 -

RFQ

IPP040N06N3GXKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 10V 4mOhm @ 90A, 10V 4V @ 90µA 98 nC @ 10 V ±20V 11000 pF @ 30 V - 188W (Tc) -55°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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