Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
64-2105PBF

64-2105PBF

MOSFET N-CH 40V 75A TO262

Infineon Technologies
3,346 -

RFQ

64-2105PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 3.7mOhm @ 75A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 4340 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF2903ZLPBF

IRF2903ZLPBF

MOSFET N-CH 30V 75A TO262

Infineon Technologies
3,970 -

RFQ

IRF2903ZLPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 10V 2.4mOhm @ 75A, 10V 4V @ 150µA 240 nC @ 10 V ±20V 6320 pF @ 25 V - 231W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP4410ZPBF

IRFP4410ZPBF

MOSFET N-CH 100V 97A TO247AC

Infineon Technologies
3,815 -

RFQ

IRFP4410ZPBF

Ficha técnica

Bag HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 97A (Tc) 10V 9mOhm @ 58A, 10V 4V @ 150µA 120 nC @ 10 V ±20V 4820 pF @ 50 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFS4410ZPBF

IRFS4410ZPBF

MOSFET N-CH 100V 97A D2PAK

Infineon Technologies
3,163 -

RFQ

IRFS4410ZPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 100 V 97A (Tc) 10V 9mOhm @ 58A, 10V 4V @ 150µA 120 nC @ 10 V ±20V 4820 pF @ 50 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFSL3607PBF

IRFSL3607PBF

MOSFET N-CH 75V 80A TO262

Infineon Technologies
2,371 -

RFQ

IRFSL3607PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 80A (Tc) 10V 9mOhm @ 46A, 10V 4V @ 100µA 84 nC @ 10 V ±20V 3070 pF @ 50 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL3806PBF

IRFSL3806PBF

MOSFET N-CH 60V 43A TO262

Infineon Technologies
2,364 -

RFQ

IRFSL3806PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 43A (Tc) 10V 15.8mOhm @ 25A, 10V 4V @ 50µA 30 nC @ 10 V ±20V 1150 pF @ 50 V - 71W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL4227PBF

IRFSL4227PBF

MOSFET N-CH 200V 62A TO262

Infineon Technologies
2,709 -

RFQ

IRFSL4227PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 62A (Tc) 10V 26mOhm @ 46A, 10V 5V @ 250µA 98 nC @ 10 V ±30V 4600 pF @ 25 V - 330W (Tc) -40°C ~ 175°C (TJ) Through Hole
IRFSL4310ZPBF

IRFSL4310ZPBF

MOSFET N-CH 100V 120A TO262

Infineon Technologies
2,451 -

RFQ

IRFSL4310ZPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 6mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6860 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL4410PBF

IRFSL4410PBF

MOSFET N-CH 100V 88A TO262

Infineon Technologies
2,128 -

RFQ

IRFSL4410PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 88A (Tc) 10V 10mOhm @ 58A, 10V 4V @ 150µA 180 nC @ 10 V ±20V 5150 pF @ 50 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU1018EPBF

IRFU1018EPBF

MOSFET N-CH 60V 56A IPAK

Infineon Technologies
3,287 -

RFQ

IRFU1018EPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 56A (Tc) 10V 8.4mOhm @ 47A, 10V 4V @ 100µA 69 nC @ 10 V ±20V 2290 pF @ 50 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU2307ZPBF

IRFU2307ZPBF

MOSFET N-CH 75V 42A IPAK

Infineon Technologies
2,054 -

RFQ

IRFU2307ZPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 42A (Tc) 10V 16mOhm @ 32A, 10V 4V @ 100µA 75 nC @ 10 V ±20V 2190 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU2607ZPBF

IRFU2607ZPBF

MOSFET N-CH 75V 42A IPAK

Infineon Technologies
2,405 -

RFQ

IRFU2607ZPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 42A (Tc) 10V 22mOhm @ 30A, 10V 4V @ 50µA 51 nC @ 10 V ±20V 1440 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU3806PBF

IRFU3806PBF

MOSFET N-CH 60V 43A IPAK

Infineon Technologies
3,866 -

RFQ

IRFU3806PBF

Ficha técnica

Tube,Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 43A (Tc) 10V 15.8mOhm @ 25A, 10V 4V @ 50µA 30 nC @ 10 V ±20V 1150 pF @ 50 V - 71W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLU3114ZPBF

IRLU3114ZPBF

MOSFET N-CH 40V 42A I-PAK

Infineon Technologies
2,116 -

RFQ

IRLU3114ZPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 42A (Tc) 4.5V, 10V 4.9mOhm @ 42A, 10V 2.5V @ 100µA 56 nC @ 4.5 V ±16V 3810 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLU8721-701PBF

IRLU8721-701PBF

MOSFET N-CH 30V 65A I-PAK

Infineon Technologies
2,979 -

RFQ

IRLU8721-701PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 65A (Tc) 4.5V, 10V 8.4mOhm @ 25A, 10V 2.35V @ 25µA 13 nC @ 4.5 V ±20V 1030 pF @ 15 V - 65W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB180N04S4H0ATMA1

IPB180N04S4H0ATMA1

MOSFET N-CH 40V 180A TO263-7-3

Infineon Technologies
3,625 -

RFQ

IPB180N04S4H0ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 180A (Tc) 10V 1.1mOhm @ 100A, 10V 4V @ 180µA 225 nC @ 10 V ±20V 17940 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB100N06S205ATMA4

IPB100N06S205ATMA4

MOSFET N-CH 55V 100A TO263-3

Infineon Technologies
2,965 -

RFQ

IPB100N06S205ATMA4

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 100A (Tc) 10V 4.7mOhm @ 80A, 10V 4V @ 250µA 170 nC @ 10 V ±20V 5110 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS4321TRL7PP

IRFS4321TRL7PP

MOSFET N-CH 150V 86A D2PAK-7

Infineon Technologies
2,696 -

RFQ

IRFS4321TRL7PP

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 150 V 86A (Tc) 10V 14.7mOhm @ 34A, 10V 5V @ 250µA 110 nC @ 10 V ±30V 4460 pF @ 50 V - 350W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB015N04NGATMA1

IPB015N04NGATMA1

MOSFET N-CH 40V 120A D2PAK

Infineon Technologies
2,540 -

RFQ

IPB015N04NGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 1.5mOhm @ 100A, 10V 4V @ 200µA 250 nC @ 10 V ±20V 20000 pF @ 20 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD65R190C7ATMA1

IPD65R190C7ATMA1

MOSFET N-CH 650V 13A TO252-3

Infineon Technologies
2,725 -

RFQ

IPD65R190C7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 650 V 13A (Tc) 10V 190mOhm @ 5.7A, 10V 4V @ 290µA 23 nC @ 10 V ±20V 1150 pF @ 400 V - 72W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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1500+ Média diária de RFQ
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20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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