Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPD60R385CPATMA1

IPD60R385CPATMA1

MOSFET N-CH 600V 9A TO252-3

Infineon Technologies
3,472 -

RFQ

IPD60R385CPATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ CP Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 10V 385mOhm @ 5.2A, 10V 3.5V @ 340µA 22 nC @ 10 V ±20V 790 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC096N10LS5ATMA1

BSC096N10LS5ATMA1

MOSFET N-CH 100V 40A TDSON-8-6

Infineon Technologies
3,411 -

RFQ

BSC096N10LS5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 100 V 40A (Tc) 4.5V, 10V 9.6mOhm @ 20A, 10V 2.3V @ 36µA 14.6 nC @ 4.5 V ±20V 2100 pF @ 50 V - 3W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB70N10S312ATMA1

IPB70N10S312ATMA1

MOSFET N-CH 100V 70A TO263-3

Infineon Technologies
2,789 -

RFQ

IPB70N10S312ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 70A (Tc) 10V 11.3mOhm @ 70A, 10V 4V @ 83µA 66 nC @ 10 V ±20V 4355 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IAUA200N04S5N010AUMA1

IAUA200N04S5N010AUMA1

MOSFET N-CH 40V 200A 5HSOF

Infineon Technologies
2,098 -

RFQ

IAUA200N04S5N010AUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™-5 Active N-Channel MOSFET (Metal Oxide) 40 V 200A (Tc) 7V, 10V 1mOhm @ 100A, 10V 3.4V @ 100µA 132 nC @ 10 V ±20V 7650 pF @ 25 V - 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD80R360P7ATMA1

IPD80R360P7ATMA1

MOSFET N-CH 800V 13A TO252-3

Infineon Technologies
3,012 -

RFQ

IPD80R360P7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 800 V 13A (Tc) 10V 360mOhm @ 5.6A, 10V 3.5V @ 280µA 30 nC @ 10 V ±20V 930 pF @ 500 V - 84W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB120N04S402ATMA1

IPB120N04S402ATMA1

MOSFET N-CH 40V 120A D2PAK

Infineon Technologies
2,786 -

RFQ

IPB120N04S402ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 1.8mOhm @ 100A, 10V 4V @ 110µA 134 nC @ 10 V ±20V 10740 pF @ 25 V - 158W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB65R310CFDATMA1

IPB65R310CFDATMA1

MOSFET N-CH 650V 11.4A D2PAK

Infineon Technologies
3,358 -

RFQ

IPB65R310CFDATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 11.4A (Tc) 10V 310mOhm @ 4.4A, 10V 4.5V @ 400µA 41 nC @ 10 V ±20V 1100 pF @ 100 V - 104.2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPP50R280CEXKSA1

IPP50R280CEXKSA1

MOSFET N-CH 500V 13A TO220-3

Infineon Technologies
3,753 -

RFQ

IPP50R280CEXKSA1

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 500 V 13A (Tc) 13V 280mOhm @ 4.2A, 13V 3.5V @ 350µA 32.6 nC @ 10 V ±20V 773 pF @ 100 V Super Junction 92W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF1404STRLPBF

IRF1404STRLPBF

MOSFET N-CH 40V 162A D2PAK

Infineon Technologies
3,169 -

RFQ

IRF1404STRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 162A (Tc) 10V 4mOhm @ 95A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 7360 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPP18P06PHXKSA1

SPP18P06PHXKSA1

MOSFET P-CH 60V 18.7A TO220-3

Infineon Technologies
2,434 -

RFQ

SPP18P06PHXKSA1

Ficha técnica

Bulk,Tube SIPMOS® Active P-Channel MOSFET (Metal Oxide) 60 V 18.7A (Ta) 10V 130mOhm @ 13.2A, 10V 4V @ 1mA 28 nC @ 10 V ±20V 860 pF @ 25 V - 81.1W (Ta) -55°C ~ 175°C (TJ) Through Hole
IPP052N06L3GXKSA1

IPP052N06L3GXKSA1

MOSFET N-CH 60V 80A TO220-3

Infineon Technologies
2,857 -

RFQ

IPP052N06L3GXKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 4.5V, 10V 5mOhm @ 80A, 10V 2.2V @ 58µA 50 nC @ 4.5 V ±20V 8400 pF @ 30 V - 115W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU7440PBF

IRFU7440PBF

MOSFET N-CH 40V 90A IPAK

Infineon Technologies
3,067 -

RFQ

IRFU7440PBF

Ficha técnica

Bulk,Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 90A (Tc) 6V, 10V 2.4mOhm @ 90A, 10V 3.9V @ 100µA 134 nC @ 10 V ±20V 4610 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPA80R1K2P7XKSA1

IPA80R1K2P7XKSA1

MOSFET N-CH 800V 4.5A TO220

Infineon Technologies
2,624 -

RFQ

IPA80R1K2P7XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 800 V 4.5A (Tc) 10V 1.2Ohm @ 1.7A, 10V 3.5V @ 80µA 11 nC @ 10 V ±20V 300 pF @ 500 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA60R280P7SXKSA1

IPA60R280P7SXKSA1

MOSFET N-CH 600V 12A TO220

Infineon Technologies
2,826 -

RFQ

IPA60R280P7SXKSA1

Ficha técnica

Bulk,Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 280mOhm @ 3.8A, 10V 4V @ 190µA 18 nC @ 10 V ±20V 761 pF @ 400 V - 24W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPAN70R360P7SXKSA1

IPAN70R360P7SXKSA1

MOSFET N-CH 700V 12.5A TO220

Infineon Technologies
2,256 -

RFQ

IPAN70R360P7SXKSA1

Ficha técnica

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 700 V 12.5A (Tc) 10V 360mOhm @ 3A, 10V 3.5V @ 150µA 16.4 nC @ 10 V ±16V 517 pF @ 400 V - 26.5W (Tc) -40°C ~ 150°C (TJ) Through Hole
BSC082N10LSGATMA1

BSC082N10LSGATMA1

MOSFET N-CH 100V 13.8A 8TDSON

Infineon Technologies
3,821 -

RFQ

BSC082N10LSGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 13.8A (Ta), 100A (Tc) 4.5V, 10V 8.2mOhm @ 100A, 10V 2.4V @ 110µA 104 nC @ 10 V ±20V 7400 pF @ 50 V - 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SPA02N80C3XKSA1

SPA02N80C3XKSA1

MOSFET N-CH 800V 2A TO220-FP

Infineon Technologies
3,305 -

RFQ

SPA02N80C3XKSA1

Ficha técnica

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 800 V 2A (Tc) 10V 2.7Ohm @ 1.2A, 10V 3.9V @ 120µA 16 nC @ 10 V ±20V 290 pF @ 100 V - 30.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFIZ44NPBF

IRFIZ44NPBF

MOSFET N-CH 55V 31A TO220AB FP

Infineon Technologies
3,368 -

RFQ

IRFIZ44NPBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 31A (Tc) 10V 24mOhm @ 17A, 10V 4V @ 250µA 65 nC @ 10 V ±20V 1300 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFR6215TRL

AUIRFR6215TRL

MOSFET P-CH 150V 13A DPAK

Infineon Technologies
3,804 -

RFQ

AUIRFR6215TRL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 150 V 13A (Tc) 10V 295mOhm @ 6.6A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 860 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA80R1K4CEXKSA2

IPA80R1K4CEXKSA2

MOSFET N-CH 800V 3.9A TO220

Infineon Technologies
3,866 -

RFQ

IPA80R1K4CEXKSA2

Ficha técnica

Bulk,Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 800 V 3.9A (Tc) 10V 1.4Ohm @ 2.3A, 10V 3.9V @ 240µA 23 nC @ 10 V ±20V 570 pF @ 100 V - 31W (Tc) -40°C ~ 150°C (TJ) Through Hole
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1500+ Média diária de RFQ
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1800+ Fabricantes em todo o mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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