Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF2804STRL7PP

IRF2804STRL7PP

MOSFET N-CH 40V 160A D2PAK

Infineon Technologies
2,830 -

RFQ

IRF2804STRL7PP

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 10V 1.6mOhm @ 160A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 6930 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFU3607PBF

IRFU3607PBF

MOSFET N-CH 75V 56A IPAK

Infineon Technologies
5,001 -

RFQ

IRFU3607PBF

Ficha técnica

Bulk,Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 56A (Tc) 10V 9mOhm @ 46A, 10V 4V @ 100µA 84 nC @ 10 V ±20V 3070 pF @ 50 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IAUS165N08S5N029ATMA1

IAUS165N08S5N029ATMA1

MOSFET N-CH 80V 165A HSOG-8

Infineon Technologies
3,647 -

RFQ

IAUS165N08S5N029ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 165A (Tc) 6V, 10V 2.9mOhm @ 80A, 10V 3.8V @ 108µA 90 nC @ 10 V ±20V 6370 pF @ 40 V - 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPLU300N04S41R1XTMA1

IPLU300N04S41R1XTMA1

MOSFET N-CH 40V 300A 8HSOF

Infineon Technologies
3,297 -

RFQ

IPLU300N04S41R1XTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 300A (Tc) 10V 1.15mOhm @ 100A, 10V 4V @ 125µA 151 nC @ 10 V ±20V 12090 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS3806PBF

IRFS3806PBF

MOSFET N-CH 60V 43A D2PAK

Infineon Technologies
3,441 -

RFQ

IRFS3806PBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 43A (Tc) 10V 15.8mOhm @ 25A, 10V 4V @ 50µA 30 nC @ 10 V ±20V 1150 pF @ 50 V - 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF1018ESPBF

IRF1018ESPBF

MOSFET N-CH 60V 79A D2PAK

Infineon Technologies
3,894 -

RFQ

IRF1018ESPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 79A (Tc) 10V 8.4mOhm @ 47A, 10V 4V @ 100µA 69 nC @ 10 V ±20V 2290 pF @ 50 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR3607PBF

IRFR3607PBF

MOSFET N-CH 75V 56A DPAK

Infineon Technologies
3,148 -

RFQ

IRFR3607PBF

Ficha técnica

Bulk,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 75 V 56A (Tc) 10V 9mOhm @ 46A, 10V 4V @ 100µA 84 nC @ 10 V ±20V 3070 pF @ 50 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7521D1PBF

IRF7521D1PBF

MOSFET N-CH 20V 2.4A MICRO8

Infineon Technologies
2,058 -

RFQ

IRF7521D1PBF

Ficha técnica

Tube FETKY™ Obsolete N-Channel MOSFET (Metal Oxide) 20 V 2.4A (Ta) 2.7V, 4.5V 135mOhm @ 1.7A, 4.5V 700mV @ 250µA (Min) 8 nC @ 4.5 V ±12V 260 pF @ 15 V Schottky Diode (Isolated) 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRL3103D1SPBF

IRL3103D1SPBF

MOSFET N-CH 30V 64A D2PAK

Infineon Technologies
2,847 -

RFQ

IRL3103D1SPBF

Ficha técnica

Tube FETKY™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 64A (Tc) 4.5V, 10V 14mOhm @ 34A, 10V 1V @ 250µA 43 nC @ 4.5 V ±16V 1900 pF @ 25 V - 3.1W (Ta), 89W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFB4233PBF

IRFB4233PBF

MOSFET N-CH 230V 56A TO220AB

Infineon Technologies
2,060 -

RFQ

IRFB4233PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 230 V 56A (Tc) 10V 37mOhm @ 28A, 10V 5V @ 250µA 170 nC @ 10 V ±30V 5510 pF @ 25 V - 370W (Tc) -40°C ~ 175°C (TJ) Through Hole
IRL1404ZSPBF

IRL1404ZSPBF

MOSFET N-CH 40V 75A D2PAK

Infineon Technologies
3,469 -

RFQ

IRL1404ZSPBF

Ficha técnica

Bulk,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 4.5V, 10V 3.1mOhm @ 75A, 10V 2.7V @ 250µA 110 nC @ 5 V ±16V 5080 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR3114ZPBF

IRLR3114ZPBF

MOSFET N-CH 40V 42A DPAK

Infineon Technologies
3,761 -

RFQ

IRLR3114ZPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 40 V 42A (Tc) 4.5V, 10V 4.9mOhm @ 42A, 10V 2.5V @ 100µA 56 nC @ 4.5 V ±16V 3810 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF5305LPBF

IRF5305LPBF

MOSFET P-CH 55V 31A TO262

Infineon Technologies
2,624 -

RFQ

IRF5305LPBF

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 55 V 31A (Tc) 10V 60mOhm @ 16A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1200 pF @ 25 V - 3.8W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3704ZCLPBF

IRF3704ZCLPBF

MOSFET N-CH 20V 67A TO262

Infineon Technologies
3,837 -

RFQ

IRF3704ZCLPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 67A (Tc) 4.5V, 10V 7.9mOhm @ 21A, 10V 2.55V @ 250µA 13 nC @ 4.5 V ±20V 1220 pF @ 10 V - 57W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL1404ZLPBF

IRL1404ZLPBF

MOSFET N-CH 40V 120A TO262

Infineon Technologies
3,315 -

RFQ

IRL1404ZLPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 4.5V, 10V 3.1mOhm @ 75A, 10V 2.7V @ 250µA 110 nC @ 5 V ±16V 5080 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3805LPBF

IRF3805LPBF

MOSFET N-CH 55V 75A TO262

Infineon Technologies
3,062 -

RFQ

IRF3805LPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 3.3mOhm @ 75A, 10V 4V @ 250µA 290 nC @ 10 V ±20V 7960 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
64-6006PBF

64-6006PBF

MOSFET N-CH 300V 46A TO247AC

Infineon Technologies
3,366 -

RFQ

64-6006PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 300 V 46A (Tc) 10V 59mOhm @ 33A, 10V 5V @ 250µA 247 nC @ 10 V ±30V 7370 pF @ 25 V - 430W (Tc) -40°C ~ 175°C (TJ) Through Hole
IRF9520NLPBF

IRF9520NLPBF

MOSFET P-CH 100V 6.8A TO262

Infineon Technologies
3,642 -

RFQ

IRF9520NLPBF

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 100 V 6.8A (Tc) 10V 480mOhm @ 4A, 10V 4V @ 250µA 27 nC @ 10 V ±20V 350 pF @ 25 V - 3.8W (Ta), 48W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF7526D1PBF

IRF7526D1PBF

MOSFET P-CH 30V 2A MICRO8

Infineon Technologies
2,111 -

RFQ

IRF7526D1PBF

Ficha técnica

Tube FETKY™ Obsolete P-Channel MOSFET (Metal Oxide) 30 V 2A (Ta) 4.5V, 10V 200mOhm @ 1.2A, 10V 1V @ 250µA 11 nC @ 10 V ±20V 180 pF @ 25 V Schottky Diode (Isolated) 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFS3207PBF

IRFS3207PBF

MOSFET N-CH 75V 170A D2PAK

Infineon Technologies
3,632 -

RFQ

IRFS3207PBF

Ficha técnica

Bulk,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 75 V 170A (Tc) 10V 4.5mOhm @ 75A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 7600 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1500+ Média diária de RFQ
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1800+ Fabricantes em todo o mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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