Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFS4310ZPBF

IRFS4310ZPBF

MOSFET N-CH 100V 120A D2PAK

Infineon Technologies
3,825 -

RFQ

IRFS4310ZPBF

Ficha técnica

Tube,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 6mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6860 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFU540ZPBF

IRFU540ZPBF

MOSFET N-CH 100V 35A IPAK

Infineon Technologies
2,229 -

RFQ

IRFU540ZPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 35A (Tc) 10V 28.5mOhm @ 21A, 10V 4V @ 50µA 59 nC @ 10 V ±20V 1690 pF @ 25 V - 91W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF6215LPBF

IRF6215LPBF

MOSFET P-CH 150V 13A TO262

Infineon Technologies
3,670 -

RFQ

IRF6215LPBF

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 150 V 13A (Tc) 10V 290mOhm @ 6.6A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 860 pF @ 25 V - 3.8W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUXAKF1405ZS-7P

AUXAKF1405ZS-7P

MOSFET N-CH 55V 120A D2PAK

Infineon Technologies
3,664 -

RFQ

AUXAKF1405ZS-7P

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 120A (Tc) 10V 4.9mOhm @ 88A, 10V 4V @ 150µA 230 nC @ 10 V ±20V 5360 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR1018EPBF

IRFR1018EPBF

MOSFET N-CH 60V 56A DPAK

Infineon Technologies
3,310 -

RFQ

IRFR1018EPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 56A (Tc) 10V 8.4mOhm @ 47A, 10V 4V @ 100µA 69 nC @ 10 V ±20V 2290 pF @ 50 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF2907ZLPBF

IRF2907ZLPBF

MOSFET N-CH 75V 160A TO262

Infineon Technologies
3,557 -

RFQ

IRF2907ZLPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 160A (Tc) 10V 4.5mOhm @ 75A, 10V 4V @ 250µA 270 nC @ 10 V ±20V 7500 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFS4229PBF

IRFS4229PBF

MOSFET N-CH 250V 45A D2PAK

Infineon Technologies
3,854 -

RFQ

IRFS4229PBF

Ficha técnica

Bulk,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 250 V 45A (Tc) 10V 48mOhm @ 26A, 10V 5V @ 250µA 110 nC @ 10 V ±30V 4560 pF @ 25 V - 330W (Tc) -40°C ~ 175°C (TJ) Surface Mount
IRFS3607PBF

IRFS3607PBF

MOSFET N-CH 75V 80A D2PAK

Infineon Technologies
2,598 -

RFQ

IRFS3607PBF

Ficha técnica

Bulk,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 75 V 80A (Tc) 10V 9mOhm @ 46A, 10V 4V @ 100µA 84 nC @ 10 V ±20V 3070 pF @ 50 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL3715ZCSTRLP

IRL3715ZCSTRLP

MOSFET N-CH 20V 50A D2PAK

Infineon Technologies
3,431 -

RFQ

IRL3715ZCSTRLP

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 50A (Tc) 4.5V, 10V 11mOhm @ 15A, 10V 2.55V @ 250µA 11 nC @ 4.5 V ±20V 870 pF @ 10 V - 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL2703STRLPBF

IRL2703STRLPBF

MOSFET N-CH 30V 24A D2PAK

Infineon Technologies
3,358 -

RFQ

IRL2703STRLPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 24A (Tc) 4.5V, 10V 40mOhm @ 14A, 10V 1V @ 250µA 15 nC @ 4.5 V ±16V 450 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3805L-7PPBF

IRF3805L-7PPBF

MOSFET N-CH 55V 160A D2PAK

Infineon Technologies
2,497 -

RFQ

IRF3805L-7PPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 160A (Tc) 10V 2.6mOhm @ 140A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 7820 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL3714STRLPBF

IRL3714STRLPBF

MOSFET N-CH 20V 36A D2PAK

Infineon Technologies
2,413 -

RFQ

IRL3714STRLPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 36A (Tc) 4.5V, 10V 20mOhm @ 18A, 10V 3V @ 250µA 9.7 nC @ 4.5 V ±20V 670 pF @ 10 V - 47W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL3714ZSTRLPBF

IRL3714ZSTRLPBF

MOSFET N-CH 20V 36A D2PAK

Infineon Technologies
2,574 -

RFQ

IRL3714ZSTRLPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 36A (Tc) 4.5V, 10V 16mOhm @ 15A, 10V 2.55V @ 250µA 7.2 nC @ 4.5 V ±20V 550 pF @ 10 V - 35W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7748L1TRPBF

IRF7748L1TRPBF

MOSFET N-CH 60V 28A DIRECTFET

Infineon Technologies
3,591 -

RFQ

IRF7748L1TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 28A (Ta), 148A (Tc) 10V 2.2mOhm @ 89A, 10V 4V @ 250µA 220 nC @ 10 V ±20V 8075 pF @ 50 V - 3.3W (Ta), 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA50R190CEXKSA2

IPA50R190CEXKSA2

MOSFET N-CH 500V 18.5A TO220

Infineon Technologies
2,326 -

RFQ

IPA50R190CEXKSA2

Ficha técnica

Bulk,Tube CoolMOS™ CE Active N-Channel MOSFET (Metal Oxide) 500 V 18.5A (Tc) 13V 190mOhm @ 6.2A, 13V 3.5V @ 510µA 47.2 nC @ 10 V ±20V 1137 pF @ 100 V - 32W (Tc) -40°C ~ 150°C (TJ) Through Hole
AUIRF6215STRL

AUIRF6215STRL

MOSFET P-CH 150V 13A D2PAK

Infineon Technologies
3,876 -

RFQ

AUIRF6215STRL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active P-Channel MOSFET (Metal Oxide) 150 V 13A (Tc) 10V 290mOhm @ 6.6A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 860 pF @ 25 V - 3.8W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF9540NLPBF

IRF9540NLPBF

MOSFET P-CH 100V 23A TO262

Infineon Technologies
3,268 -

RFQ

IRF9540NLPBF

Ficha técnica

Tube HEXFET® Active P-Channel MOSFET (Metal Oxide) 100 V 23A (Tc) 10V 117mOhm @ 14A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 1450 pF @ 25 V - 3.1W (Ta), 110W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLS3036TRLPBF

IRLS3036TRLPBF

MOSFET N-CH 60V 195A D2PAK

Infineon Technologies
2,710 -

RFQ

IRLS3036TRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 4.5V, 10V 2.4mOhm @ 165A, 10V 2.5V @ 250µA 140 nC @ 4.5 V ±16V 11210 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB180P04P4L02ATMA1

IPB180P04P4L02ATMA1

MOSFET P-CH 40V 180A TO263-7

Infineon Technologies
3,747 -

RFQ

IPB180P04P4L02ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Not For New Designs P-Channel MOSFET (Metal Oxide) 40 V 180A (Tc) 4.5V, 10V 2.4mOhm @ 100A, 10V 2.2V @ 410µA 286 nC @ 10 V ±16V 18700 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB180P04P4L02ATMA2

IPB180P04P4L02ATMA2

MOSFET P-CH 40V 180A TO263-7

Infineon Technologies
2,604 -

RFQ

IPB180P04P4L02ATMA2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS®-P2 Active P-Channel MOSFET (Metal Oxide) 40 V 180A (Tc) 4.5V, 10V 2.4mOhm @ 100A, 10V 2.2V @ 410µA 286 nC @ 10 V +5V, -16V 18700 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1800+ Fabricantes em todo o mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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