Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF7492PBF

IRF7492PBF

MOSFET N-CH 200V 3.7A 8SO

Infineon Technologies
3,237 -

RFQ

IRF7492PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 3.7A (Ta) 10V 79mOhm @ 2.2A, 10V 2.5V @ 250µA 59 nC @ 10 V ±20V 1820 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSZ0602LSATMA1

BSZ0602LSATMA1

MOSFET N-CH 80V 13A/40A TSDSON

Infineon Technologies
2,169 -

RFQ

BSZ0602LSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 80 V 13A (Ta), 40A (Tc) 4.5V, 10V 7mOhm @ 20A, 10V 2.3V @ 36µA 18 nC @ 4.5 V ±20V 2340 pF @ 40 V - 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFU3710Z-701P

IRFU3710Z-701P

MOSFET N-CH 100V 42A IPAK

Infineon Technologies
3,657 -

RFQ

IRFU3710Z-701P

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) 10V 18mOhm @ 33A, 10V 4V @ 250µA 100 nC @ 10 V ±20V 2930 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPD90N06S4L03ATMA2

IPD90N06S4L03ATMA2

MOSFET N-CH 60V 90A TO252-31

Infineon Technologies
2,860 -

RFQ

IPD90N06S4L03ATMA2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 4.5V, 10V 3.5mOhm @ 90A, 10V 2.2V @ 90µA 170 nC @ 10 V ±16V 13000 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLU7833-701PBF

IRLU7833-701PBF

MOSFET N-CH 30V 140A IPAK

Infineon Technologies
2,574 -

RFQ

IRLU7833-701PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 140A (Tc) 4.5V, 10V 4.5mOhm @ 15A, 10V 2.3V @ 250µA 50 nC @ 4.5 V ±20V 4010 pF @ 15 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLU7843-701PBF

IRLU7843-701PBF

MOSFET N-CH 30V 161A IPAK

Infineon Technologies
3,897 -

RFQ

IRLU7843-701PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 161A (Tc) 4.5V, 10V 3.3mOhm @ 15A, 10V 2.3V @ 250µA 50 nC @ 4.5 V ±20V 4380 pF @ 15 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR3110ZPBF

IRLR3110ZPBF

MOSFET N-CH 100V 42A DPAK

Infineon Technologies
3,765 -

RFQ

IRLR3110ZPBF

Ficha técnica

Bulk,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) 4.5V, 10V 14mOhm @ 38A, 10V 2.5V @ 100µA 48 nC @ 4.5 V ±16V 3980 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFH5406TRPBF

IRFH5406TRPBF

MOSFET N-CH 60V 11A/40A 8PQFN

Infineon Technologies
2,921 -

RFQ

IRFH5406TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 11A (Ta), 40A (Tc) 10V 14.4mOhm @ 24A, 10V 4V @ 50µA 35 nC @ 10 V ±20V 1256 pF @ 25 V - 3.6W (Ta), 46W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLB8314PBF

IRLB8314PBF

MOSFET N-CH 30V 171A TO220-3

Infineon Technologies
3,017 -

RFQ

IRLB8314PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 171A (Tc) 4.5V, 10V 2.4mOhm @ 68A, 10V 2.2V @ 100µA 60 nC @ 4.5 V ±20V 5050 pF @ 15 V - 125W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFS3307PBF

IRFS3307PBF

MOSFET N-CH 75V 120A D2PAK

Infineon Technologies
3,134 -

RFQ

IRFS3307PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 10V 6.3mOhm @ 75A, 10V 4V @ 150µA 180 nC @ 10 V ±20V 5150 pF @ 50 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7210PBF

IRF7210PBF

MOSFET P-CH 12V 16A 8SO

Infineon Technologies
2,376 -

RFQ

IRF7210PBF

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 12 V 16A (Ta) 2.5V, 4.5V 7mOhm @ 16A, 4.5V 600mV @ 500µA (Min) 212 nC @ 5 V ±12V 17179 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF520NSTRRPBF

IRF520NSTRRPBF

MOSFET N-CH 100V 9.7A D2PAK

Infineon Technologies
2,476 -

RFQ

IRF520NSTRRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 9.7A (Tc) 10V 200mOhm @ 5.7A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 330 pF @ 25 V - 3.8W (Ta), 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL3714STRRPBF

IRL3714STRRPBF

MOSFET N-CH 20V 36A D2PAK

Infineon Technologies
3,251 -

RFQ

IRL3714STRRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 36A (Tc) 4.5V, 10V 20mOhm @ 18A, 10V 3V @ 250µA 9.7 nC @ 4.5 V ±20V 670 pF @ 10 V - 47W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD60R280P7ATMA1

IPD60R280P7ATMA1

MOSFET N-CH 600V 12A TO252-3

Infineon Technologies
3,735 -

RFQ

IPD60R280P7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 280mOhm @ 3.8A, 10V 4V @ 190µA 18 nC @ 10 V ±20V 761 pF @ 400 V - 53W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFH5004TRPBF

IRFH5004TRPBF

MOSFET N-CH 40V 28A/100A 8PQFN

Infineon Technologies
16,000 -

RFQ

IRFH5004TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 28A (Ta), 100A (Tc) 10V 2.6mOhm @ 50A, 10V 4V @ 150µA 110 nC @ 10 V ±20V 4490 pF @ 20 V - 3.6W (Ta), 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB80P04P4L08ATMA2

IPB80P04P4L08ATMA2

MOSFET P-CH 40V 80A TO263-3

Infineon Technologies
3,777 -

RFQ

IPB80P04P4L08ATMA2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS®-P2 Active P-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 4.5V, 10V 8.2mOhm @ 80A, 10V 2.2V @ 120µA 92 nC @ 10 V +5V, -16V 5430 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3709STRRPBF

IRF3709STRRPBF

MOSFET N-CH 30V 90A D2PAK

Infineon Technologies
2,828 -

RFQ

IRF3709STRRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 9mOhm @ 15A, 10V 3V @ 250µA 41 nC @ 5 V ±20V 2672 pF @ 16 V - 3.1W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFZ34NSTRRPBF

IRFZ34NSTRRPBF

MOSFET N-CH 55V 29A D2PAK

Infineon Technologies
2,388 -

RFQ

IRFZ34NSTRRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 29A (Tc) 10V 40mOhm @ 16A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 700 pF @ 25 V - 3.8W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3707STRRPBF

IRF3707STRRPBF

MOSFET N-CH 30V 62A D2PAK

Infineon Technologies
3,454 -

RFQ

IRF3707STRRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 62A (Tc) 4.5V, 10V 12.5mOhm @ 15A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V 1990 pF @ 15 V - 87W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3704ZSTRRPBF

IRF3704ZSTRRPBF

MOSFET N-CH 20V 67A D2PAK

Infineon Technologies
2,108 -

RFQ

IRF3704ZSTRRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 67A (Tc) 4.5V, 10V 7.9mOhm @ 21A, 10V 2.55V @ 250µA 13 nC @ 4.5 V ±20V 1220 pF @ 10 V - 57W (Tc) -55°C ~ 175°C (TJ) Surface Mount
Total 8399 Record«Prev1... 148149150151152153154155...420Next»
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário