Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFHM830DTR2PBF

IRFHM830DTR2PBF

MOSFET N-CH 30V 20A PQFN

Infineon Technologies
3,255 -

RFQ

IRFHM830DTR2PBF

Ficha técnica

Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 20A (Ta), 40A (Tc) - 4.3mOhm @ 20A, 10V 2.35V @ 50µA 27 nC @ 10 V - 1797 pF @ 25 V - - - Surface Mount
IRFHM830TR2PBF

IRFHM830TR2PBF

MOSFET N-CH 30V 21A PQFN

Infineon Technologies
2,053 -

RFQ

IRFHM830TR2PBF

Ficha técnica

Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 21A (Ta), 40A (Tc) - 3.8mOhm @ 20A, 10V 2.35V @ 50µA 31 nC @ 10 V - 2155 pF @ 25 V - - - Surface Mount
IRFHM831TR2PBF

IRFHM831TR2PBF

MOSFET N-CH 30V 14A PQFN

Infineon Technologies
2,501 -

RFQ

IRFHM831TR2PBF

Ficha técnica

Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta), 40A (Tc) - 7.8mOhm @ 12A, 10V 2.35V @ 25µA 16 nC @ 10 V - 1050 pF @ 25 V - - - Surface Mount
IRLHM620TR2PBF

IRLHM620TR2PBF

MOSFET N-CH 20V 26A PQFN

Infineon Technologies
2,346 -

RFQ

IRLHM620TR2PBF

Ficha técnica

Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 20 V 26A (Ta), 40A (Tc) - 2.5mOhm @ 20A, 4.5V 1.1V @ 50µA 78 nC @ 4.5 V - 3620 pF @ 10 V - - - Surface Mount
IRLHM630TR2PBF

IRLHM630TR2PBF

MOSFET N-CH 30V 21A PQFN

Infineon Technologies
2,229 -

RFQ

IRLHM630TR2PBF

Ficha técnica

Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 21A (Ta), 40A (Tc) - 3.5mOhm @ 20A, 4.5V 1.1V @ 50µA 62 nC @ 4.5 V - 3170 pF @ 25 V - - - Surface Mount
IPA60R450E6XKSA1

IPA60R450E6XKSA1

MOSFET N-CH 600V 9.2A TO220-FP

Infineon Technologies
3,280 -

RFQ

IPA60R450E6XKSA1

Ficha técnica

Tube,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 9.2A (Tc) 10V 450mOhm @ 3.4A, 10V 3.5V @ 280µA 28 nC @ 10 V ±20V 620 pF @ 100 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA60R520E6XKSA1

IPA60R520E6XKSA1

MOSFET N-CH 600V 8.1A TO220-FP

Infineon Technologies
3,092 -

RFQ

IPA60R520E6XKSA1

Ficha técnica

Tube,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 8.1A (Tc) 10V 520mOhm @ 2.8A, 10V 3.5V @ 230µA 23.4 nC @ 10 V ±20V 512 pF @ 100 V - 29W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA60R750E6XKSA1

IPA60R750E6XKSA1

MOSFET N-CH 600V 5.7A TO220-FP

Infineon Technologies
3,618 -

RFQ

IPA60R750E6XKSA1

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 5.7A (Tc) 10V 750mOhm @ 2A, 10V 3.5V @ 170µA 17.2 nC @ 10 V ±20V 373 pF @ 100 V - 27W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP037N08N3GE8181XKSA1

IPP037N08N3GE8181XKSA1

MOSFET N-CH 80V 100A TO220-3

Infineon Technologies
2,818 -

RFQ

IPP037N08N3GE8181XKSA1

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 80 V 100A (Tc) 6V, 10V 3.75mOhm @ 100A, 10V 3.5V @ 155µA 117 nC @ 10 V ±20V 8110 pF @ 40 V - 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP60R280E6XKSA1

IPP60R280E6XKSA1

MOSFET N-CH 600V 13.8A TO220-3

Infineon Technologies
3,233 -

RFQ

IPP60R280E6XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 13.8A (Tc) 10V 280mOhm @ 6.5A, 10V 3.5V @ 430µA 43 nC @ 10 V ±20V 950 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP60R450E6XKSA1

IPP60R450E6XKSA1

MOSFET N-CH 600V 9.2A TO220-3

Infineon Technologies
3,711 -

RFQ

IPP60R450E6XKSA1

Ficha técnica

Tube,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 9.2A (Tc) 10V 450mOhm @ 3.4A, 10V 3.5V @ 280µA 28 nC @ 10 V ±20V 620 pF @ 100 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP60R520E6XKSA1

IPP60R520E6XKSA1

MOSFET N-CH 600V 8.1A TO220-3

Infineon Technologies
600 -

RFQ

IPP60R520E6XKSA1

Ficha técnica

Tube,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 8.1A (Tc) 10V 520mOhm @ 2.8A, 10V 3.5V @ 230µA 23.4 nC @ 10 V ±20V 512 pF @ 100 V - 66W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP60R600E6XKSA1

IPP60R600E6XKSA1

MOSFET N-CH 600V 7.3A TO220-3

Infineon Technologies
2,858 -

RFQ

IPP60R600E6XKSA1

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 7.3A (Tc) 10V 600mOhm @ 2.4A, 10V 3.5V @ 200µA 20.5 nC @ 10 V ±20V 440 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP60R750E6XKSA1

IPP60R750E6XKSA1

MOSFET N-CH 600V 5.7A TO220-3

Infineon Technologies
3,156 -

RFQ

IPP60R750E6XKSA1

Ficha técnica

Tube,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 5.7A (Tc) 10V 750mOhm @ 2A, 10V 3.5V @ 170µA 17.2 nC @ 10 V ±20V 373 pF @ 100 V - 48W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP65R280E6XKSA1

IPP65R280E6XKSA1

MOSFET N-CH 650V 13.8A TO220-3

Infineon Technologies
3,205 -

RFQ

IPP65R280E6XKSA1

Ficha técnica

Tube,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 13.8A (Tc) 10V 280mOhm @ 4.4A, 10V 3.5V @ 440µA 45 nC @ 10 V ±20V 950 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP65R380E6XKSA1

IPP65R380E6XKSA1

MOSFET N-CH 650V 10.6A TO220-3

Infineon Technologies
2,559 -

RFQ

IPP65R380E6XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 10.6A (Tc) 10V 380mOhm @ 3.2A, 10V 3.5V @ 320µA 39 nC @ 10 V ±20V 710 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
BSD316NL6327

BSD316NL6327

SMALL SIGNAL N-CHANNEL MOSFET

Infineon Technologies
3,945 -

RFQ

BSD316NL6327

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BSS139IXTMA1

BSS139IXTMA1

250V N-CH SMALL SIGNAL MOSFET IN

Infineon Technologies
2,537 -

RFQ

BSS139IXTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 250 V 100mA (Ta) 0V, 10V 14Ohm @ 100mA, 10V 1V @ 56µA 2.3 nC @ 5 V ±20V 60 pF @ 25 V - 360mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPP65R600E6XKSA1

IPP65R600E6XKSA1

MOSFET N-CH 650V 7.3A TO220-3

Infineon Technologies
9,580 -

RFQ

IPP65R600E6XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 7.3A (Tc) 10V 600mOhm @ 2.1A, 10V 3.5V @ 210µA 23 nC @ 10 V ±20V 440 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW60R280E6FKSA1

IPW60R280E6FKSA1

MOSFET N-CH 600V 13.8A TO247-3

Infineon Technologies
3,536 -

RFQ

IPW60R280E6FKSA1

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 13.8A (Tc) 10V 280mOhm @ 6.5A, 10V 3.5V @ 430µA 43 nC @ 10 V ±20V 950 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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