Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AUIRFB3207

AUIRFB3207

MOSFET N-CH 75V 75A TO220AB

Infineon Technologies
3,127 -

RFQ

AUIRFB3207

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 75A (Tc) 10V 4.5mOhm @ 75A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 7600 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFB4410

AUIRFB4410

MOSFET N-CH 100V 75A TO220AB

Infineon Technologies
300 -

RFQ

AUIRFB4410

Ficha técnica

Bulk,Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 10V 10mOhm @ 58A, 10V 4V @ 150µA 180 nC @ 10 V ±20V 5150 pF @ 50 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFB4610

AUIRFB4610

MOSFET N-CH 100V 73A TO220AB

Infineon Technologies
2,876 -

RFQ

AUIRFB4610

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 73A (Tc) 10V 14mOhm @ 44A, 10V 4V @ 100µA 140 nC @ 10 V ±20V 3550 pF @ 50 V - 190W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFP2907Z

AUIRFP2907Z

MOSFET N-CH 75V 170A TO247AC

Infineon Technologies
3,002 -

RFQ

AUIRFP2907Z

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 170A (Tc) 10V 4.5mOhm @ 90A, 10V 4V @ 250µA 270 nC @ 10 V ±20V 7500 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFR120Z

AUIRFR120Z

MOSFET N-CH 100V 8.7A DPAK

Infineon Technologies
5,550 -

RFQ

AUIRFR120Z

Ficha técnica

Bulk,Tube,Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 8.7A (Tc) 10V 190mOhm @ 5.2A, 10V 4V @ 25µA 10 nC @ 10 V ±20V 310 pF @ 25 V - 35W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFR120ZTRL

AUIRFR120ZTRL

MOSFET N-CH 100V 8.7A DPAK

Infineon Technologies
2,058 -

RFQ

AUIRFR120ZTRL

Ficha técnica

Tape & Reel (TR),Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 8.7A (Tc) 10V 190mOhm @ 5.2A, 10V 4V @ 25µA 10 nC @ 10 V ±20V 310 pF @ 25 V - 35W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFR2307Z

AUIRFR2307Z

MOSFET N-CH 75V 42A DPAK

Infineon Technologies
2,380 -

RFQ

AUIRFR2307Z

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 42A (Tc) 10V 16mOhm @ 32A, 10V 4V @ 100µA 75 nC @ 10 V ±20V 2190 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFR2607Z

AUIRFR2607Z

MOSFET N-CH 75V 42A DPAK

Infineon Technologies
2,894 -

RFQ

AUIRFR2607Z

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 42A (Tc) 10V 22mOhm @ 30A, 10V 4V @ 50µA 51 nC @ 10 V ±20V 1440 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFR2607ZTRL

AUIRFR2607ZTRL

MOSFET N-CH 75V 42A DPAK

Infineon Technologies
3,332 -

RFQ

AUIRFR2607ZTRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 42A (Tc) 10V 22mOhm @ 30A, 10V 4V @ 50µA 51 nC @ 10 V ±20V 1440 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFR3504Z

AUIRFR3504Z

MOSFET N-CH 40V 42A DPAK

Infineon Technologies
3,092 -

RFQ

AUIRFR3504Z

Ficha técnica

Bulk,Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 42A (Tc) 10V 9mOhm @ 42A, 10V 4V @ 250µA 45 nC @ 10 V ±20V 1510 pF @ 25 V - 90W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFR3710Z

AUIRFR3710Z

MOSFET N-CH 100V 42A DPAK

Infineon Technologies
3,975 -

RFQ

AUIRFR3710Z

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) 10V 18mOhm @ 33A, 10V 4V @ 250µA 100 nC @ 10 V ±20V 2930 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFZ44VZS

AUIRFZ44VZS

MOSFET N-CH 60V 57A D2PAK

Infineon Technologies
3,881 -

RFQ

AUIRFZ44VZS

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 57A (Tc) 10V 12mOhm @ 34A, 10V 4V @ 250µA 65 nC @ 10 V ±20V 1690 pF @ 25 V - 92W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFZ44VZSTRL

AUIRFZ44VZSTRL

MOSFET N-CH 60V 57A D2PAK

Infineon Technologies
3,481 -

RFQ

AUIRFZ44VZSTRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 57A (Tc) 10V 12mOhm @ 34A, 10V 4V @ 250µA 65 nC @ 10 V ±20V 1690 pF @ 25 V - 92W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFZ44Z

AUIRFZ44Z

MOSFET N-CH 55V 51A TO220

Infineon Technologies
3,763 -

RFQ

AUIRFZ44Z

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 51A (Tc) 10V 13.9mOhm @ 31A, 10V 4V @ 250µA 43 nC @ 10 V ±20V 1420 pF @ 25 V - 80W (Tc) -55°C ~ 175°C (TJ) Through Hole
BSR302KL6327

BSR302KL6327

SMALL SIGNAL MOSFET

Infineon Technologies
3,583 -

RFQ

BSR302KL6327

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
AUIRFZ44ZS

AUIRFZ44ZS

MOSFET N-CH 55V 51A D2PAK

Infineon Technologies
2,369 -

RFQ

AUIRFZ44ZS

Ficha técnica

Bulk,Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 51A (Tc) 10V 13.9mOhm @ 31A, 10V 4V @ 250µA 43 nC @ 10 V ±20V 1420 pF @ 25 V - 80W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFR4104

AUIRFR4104

MOSFET N-CH 40V 42A DPAK

Infineon Technologies
2,556 -

RFQ

AUIRFR4104

Ficha técnica

Bulk,Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 42A (Tc) 10V 5.5mOhm @ 42A, 10V 4V @ 250µA 89 nC @ 10 V ±20V 2950 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFR4105

AUIRFR4105

MOSFET N-CH 55V 20A DPAK

Infineon Technologies
3,674 -

RFQ

AUIRFR4105

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 20A (Tc) 10V 45mOhm @ 16A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 700 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFR4105TRL

AUIRFR4105TRL

MOSFET N-CH 55V 20A DPAK

Infineon Technologies
2,701 -

RFQ

AUIRFR4105TRL

Ficha técnica

Tape & Reel (TR) HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 20A (Tc) - 45mOhm @ 16A, 10V 4V @ 250µA 34 nC @ 10 V - 700 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFR4105Z

AUIRFR4105Z

MOSFET N-CH 55V 20A DPAK

Infineon Technologies
2,482 -

RFQ

AUIRFR4105Z

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 20A (Tc) 10V 24.5mOhm @ 18A, 10V 4V @ 250µA 27 nC @ 10 V ±20V 740 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1500+ Média diária de RFQ
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1800+ Fabricantes em todo o mundo
15,000+
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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