Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AUIRLR2905Z

AUIRLR2905Z

MOSFET N-CH 55V 42A DPAK

Infineon Technologies
3,008 -

RFQ

AUIRLR2905Z

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 4.5V, 10V 13.5mOhm @ 36A, 10V 3V @ 250µA 35 nC @ 5 V ±16V 1570 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRLR3705Z

AUIRLR3705Z

MOSFET N-CH 55V 42A DPAK

Infineon Technologies
3,825 -

RFQ

AUIRLR3705Z

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 4.5V, 10V 8mOhm @ 42A, 10V 3V @ 250µA 66 nC @ 5 V ±16V 2900 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6708S2TR1PBF

IRF6708S2TR1PBF

MOSFET N-CH 30V 13A DIRECTFET S1

Infineon Technologies
2,102 -

RFQ

IRF6708S2TR1PBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13A (Tc) 4.5V, 10V 8.9mOhm @ 13A, 10V 2.35V @ 25µA 10 nC @ 4.5 V ±20V 1010 pF @ 15 V - 2.5W (Ta), 20W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6708S2TRPBF

IRF6708S2TRPBF

MOSFET N-CH 30V 13A DIRECTFET S1

Infineon Technologies
3,034 -

RFQ

IRF6708S2TRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13A (Tc) 4.5V, 10V 8.9mOhm @ 13A, 10V 2.35V @ 25µA 10 nC @ 4.5 V ±20V 1010 pF @ 15 V - 2.5W (Ta), 20W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6728MTRPBF

IRF6728MTRPBF

MOSFET N-CH 30V 23A DIRECTFET

Infineon Technologies
2,864 -

RFQ

IRF6728MTRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 23A (Ta), 140A (Tc) 4.5V, 10V 2.5mOhm @ 23A, 10V 2.35V @ 100µA 42 nC @ 4.5 V ±20V 4110 pF @ 15 V - 2.1W (Ta), 75W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRLML6344TRPBF

IRLML6344TRPBF

MOSFET N-CH 30V 5A MICRO3/SOT23

Infineon Technologies
2,400 -

RFQ

IRLML6344TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 5A (Ta) 2.5V, 4.5V 29mOhm @ 5A, 4.5V 1.1V @ 10µA 6.8 nC @ 4.5 V ±12V 650 pF @ 25 V - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF9332PBF

IRF9332PBF

MOSFET P-CH 30V 9.8A 8SO

Infineon Technologies
3,218 -

RFQ

IRF9332PBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen P-Channel MOSFET (Metal Oxide) 30 V 9.8A (Ta) 4.5V, 10V 17.5mOhm @ 9.8A, 10V 2.4V @ 25µA 41 nC @ 10 V ±20V 1270 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF9392PBF

IRF9392PBF

MOSFET P-CH 30V 9.8A 8SO

Infineon Technologies
3,497 -

RFQ

IRF9392PBF

Ficha técnica

Tube,Tube HEXFET® Discontinued at Mosen P-Channel MOSFET (Metal Oxide) 30 V 9.8A (Ta) 10V, 20V 12.1mOhm @ 7.8A, 20V 2.4V @ 25µA 14 nC @ 4.5 V ±25V 1270 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF9392TRPBF

IRF9392TRPBF

MOSFET P-CH 30V 9.8A 8SO

Infineon Technologies
3,830 -

RFQ

IRF9392TRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 9.8A (Ta) 10V, 20V 12.1mOhm @ 7.8A, 20V 2.4V @ 25µA 14 nC @ 4.5 V ±25V 1270 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFB3607GPBF

IRFB3607GPBF

MOSFET N-CH 75V 80A TO220AB

Infineon Technologies
2,658 -

RFQ

IRFB3607GPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 80A (Tc) 10V 9mOhm @ 46A, 10V 4V @ 100µA 84 nC @ 10 V ±20V 3070 pF @ 50 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFH5104TRPBF

IRFH5104TRPBF

MOSFET N-CH 40V 24A/100A PQFN

Infineon Technologies
3,802 -

RFQ

IRFH5104TRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 24A (Ta), 100A (Tc) 10V 3.5mOhm @ 50A, 10V 4V @ 100µA 80 nC @ 10 V ±20V 3120 pF @ 25 V - 3.6W (Ta), 114W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFH5204TRPBF

IRFH5204TRPBF

MOSFET N-CH 40V 22A/100A PQFN

Infineon Technologies
3,037 -

RFQ

IRFH5204TRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 22A (Ta), 100A (Tc) 10V 4.3mOhm @ 50A, 10V 4V @ 100µA 65 nC @ 10 V ±20V 2460 pF @ 25 V - 3.6W (Ta), 105W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFH5220TRPBF

IRFH5220TRPBF

MOSFET N-CH 200V 3.8A/20A PQFN

Infineon Technologies
3,778 -

RFQ

IRFH5220TRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 3.8A (Ta), 20A (Tc) 10V 99.9mOhm @ 5.8A, 10V 5V @ 100µA 30 nC @ 10 V ±20V 1380 pF @ 50 V - 3.6W (Ta), 8.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFI4121H-117P

IRFI4121H-117P

MOSFET N-CH 100V 11A TO220-5

Infineon Technologies
3,779 -

RFQ

IRFI4121H-117P

Ficha técnica

Tube - Obsolete - - - 11A (Tc) - - - - - - - - - -
IRL6342PBF

IRL6342PBF

MOSFET N-CH 30V 9.9A 8SO

Infineon Technologies
3,563 -

RFQ

IRL6342PBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 9.9A (Ta) 2.5V, 4.5V 14.6mOhm @ 9.9A, 4.5V 1.1V @ 10µA 11 nC @ 4.5 V ±12V 1025 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPD60R3K4CEAUMA1

IPD60R3K4CEAUMA1

MOSFET N-CH 650V 2.6A TO252-3

Infineon Technologies
2,842 -

RFQ

IPD60R3K4CEAUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 2.6A (Tc) 10V 3.4Ohm @ 500mA, 10V 3.5V @ 40µA 4.6 nC @ 10 V ±20V 93 pF @ 100 V - 29W (Tc) -40°C ~ 150°C (TJ) Surface Mount
BSL302SNL6327

BSL302SNL6327

SMALL SIGNAL N-CHANNEL MOSFET

Infineon Technologies
2,581 -

RFQ

BSL302SNL6327

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BSP88L6327

BSP88L6327

N-CHANNEL POWER MOSFET

Infineon Technologies
3,608 -

RFQ

BSP88L6327

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRFHM8334TRPBF-INF

IRFHM8334TRPBF-INF

MOSFET N-CH 30V 13A/43A 8PQFN DL

Infineon Technologies
2,162 -

RFQ

IRFHM8334TRPBF-INF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta), 43A (Tc) - 9mOhm @ 20A, 10V 2.35V @ 25µA 15 nC @ 10 V ±20V 1180 pF @ 10 V - 2.7W (Ta), 28W (Tc) -55°C ~ 150°C (TJ) Surface Mount
ISP20EP10LMXTSA1

ISP20EP10LMXTSA1

SMALL SIGNAL MOSFETS PG-SOT223-4

Infineon Technologies
2,373 -

RFQ

ISP20EP10LMXTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 100 V 650mA (Ta), 990mA (Tc) 4.5V, 10V 2Ohm @ 600mA, 10V 2V @ 78µA 3.5 nC @ 10 V ±20V 170 pF @ 50 V - 1.8W (Ta), 4.2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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