Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
ISP98DP10LMXTSA1

ISP98DP10LMXTSA1

SMALL SIGNAL MOSFETS PG-SOT223-4

Infineon Technologies
3,639 -

RFQ

ISP98DP10LMXTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 100 V 930mA (Ta), 1.55A (Tc) 4.5V, 10V 980mOhm @ 900mA, 10V 2V @ 165µA 7.2 nC @ 10 V ±20V 350 pF @ 50 V - 1.8W (Ta), 5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
ISP14EP15LMXTSA1

ISP14EP15LMXTSA1

SMALL SIGNAL MOSFETS PG-SOT223-4

Infineon Technologies
3,124 -

RFQ

ISP14EP15LMXTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 150 V 770mA (Ta), 1.29A (Tc) 4.5V, 10V 1.38Ohm @ 800mA, 10V 2V @ 270µA 11.6 nC @ 10 V ±20V 530 pF @ 75 V - 1.8W (Ta), 5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSP316PL6327

BSP316PL6327

P-CHANNEL MOSFET

Infineon Technologies
2,055 -

RFQ

BSP316PL6327

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPD50R800CEAUMA1

IPD50R800CEAUMA1

CONSUMER

Infineon Technologies
3,553 -

RFQ

IPD50R800CEAUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 500 V 7.6A (Tc) 13V 800mOhm @ 1.5A, 13V 3.5V @ 130µA 12.4 nC @ 10 V ±20V 280 pF @ 100 V - 60W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPN60R1K0PFD7SATMA1

IPN60R1K0PFD7SATMA1

CONSUMER PG-SOT223-3

Infineon Technologies
2,941 -

RFQ

IPN60R1K0PFD7SATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ PFD7 Active N-Channel MOSFET (Metal Oxide) 600 V 4.7A (Tc) 10V 1Ohm @ 1A, 10V 4.5V @ 50µA 6 nC @ 10 V ±20V 230 pF @ 400 V - 6W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IAUC41N06S5L100ATMA1

IAUC41N06S5L100ATMA1

MOSFET N-CH 60V 41A TDSON-8-33

Infineon Technologies
2,750 -

RFQ

IAUC41N06S5L100ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 41A (Tj) - 10mOhm @ 20A, 10V 2.2V @ 13µA 16.4 nC @ 10 V ±16V 1205 pF @ 30 V - 42W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IAUC60N04S6N044ATMA1

IAUC60N04S6N044ATMA1

IAUC60N04S6N044ATMA1

Infineon Technologies
2,412 -

RFQ

IAUC60N04S6N044ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 60A (Tc) 7V, 10V 4.52mOhm @ 30A, 10V 3V @ 14µA 18 nC @ 10 V ±20V 1042 pF @ 25 V - 42W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFH5204TR2PBF

IRFH5204TR2PBF

MOSFET N-CH 40V 22A PQFN

Infineon Technologies
3,840 -

RFQ

IRFH5204TR2PBF

Ficha técnica

Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 40 V 22A (Ta), 100A (Tc) - 4.3mOhm @ 50A, 10V 4V @ 100µA 65 nC @ 10 V - 2460 pF @ 25 V - - - Surface Mount
IRFH5215TR2PBF

IRFH5215TR2PBF

MOSFET N-CH 150V 5.0A PQFN

Infineon Technologies
3,944 -

RFQ

IRFH5215TR2PBF

Ficha técnica

Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 150 V 5A (Ta), 27A (Tc) - 58mOhm @ 16A, 10V 5V @ 100µA 32 nC @ 10 V - 1350 pF @ 50 V - - - Surface Mount
IPC70N04S54R6ATMA1

IPC70N04S54R6ATMA1

MOSFET N-CH 40V 70A 8TDSON-34

Infineon Technologies
2,558 -

RFQ

IPC70N04S54R6ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 70A (Tc) 7V, 10V 4.6mOhm @ 35A, 10V 3.4V @ 17µA 24.2 nC @ 10 V ±20V 1430 pF @ 25 V - 50W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFH5220TR2PBF

IRFH5220TR2PBF

MOSFET N-CH 200V 3.8A PQFN

Infineon Technologies
2,201 -

RFQ

IRFH5220TR2PBF

Ficha técnica

Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 3.8A (Ta), 20A (Tc) - 99.9mOhm @ 5.8A, 10V 5V @ 100µA 30 nC @ 10 V - 1380 pF @ 50 V - - - Surface Mount
IRLHS6242TR2PBF

IRLHS6242TR2PBF

MOSFET N-CH 20V 10A PQFN

Infineon Technologies
3,173 -

RFQ

IRLHS6242TR2PBF

Ficha técnica

Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 20 V 10A (Ta), 12A (Tc) - 11.7mOhm @ 8.5A, 4.5V 1.1V @ 10µA 14 nC @ 4.5 V - 1110 pF @ 10 V - - - Surface Mount
IRLHS6342TR2PBF

IRLHS6342TR2PBF

MOSFET N-CH 30V 8.7A PQFN

Infineon Technologies
3,260 -

RFQ

IRLHS6342TR2PBF

Ficha técnica

Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.7A (Ta), 19A (Tc) - 15.5mOhm @ 8.5A, 4.5V 1.1V @ 10µA 11 nC @ 4.5 V - 1019 pF @ 25 V - - - Surface Mount
IRFH8318TR2PBF

IRFH8318TR2PBF

MOSFET N-CH 30V 21A 5X6 PQFN

Infineon Technologies
2,780 -

RFQ

IRFH8318TR2PBF

Ficha técnica

Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 27A (Ta), 120A (Tc) - 3.1mOhm @ 20A, 10V 2.35V @ 50µA 41 nC @ 10 V - 3180 pF @ 10 V - - - Surface Mount
IRFH8325TR2PBF

IRFH8325TR2PBF

MOSFET N-CH 30V 17A 5X6 PQFN

Infineon Technologies
2,122 -

RFQ

IRFH8325TR2PBF

Ficha técnica

Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 21A (Ta), 82A (Tc) - 5mOhm @ 20A, 10V 2.35V @ 50µA 32 nC @ 10 V - 2487 pF @ 10 V - - - Surface Mount
IRFH8330TR2PBF

IRFH8330TR2PBF

MOSFET N-CH 30V 14A 5X6 PQFN

Infineon Technologies
2,270 -

RFQ

IRFH8330TR2PBF

Ficha técnica

Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 17A (Ta), 56A (Tc) - 6.6mOhm @ 20A, 10V 2.35V @ 25µA 20 nC @ 10 V - 1450 pF @ 25 V - - - Surface Mount
IRFH8334TR2PBF

IRFH8334TR2PBF

MOSFET N-CH 30V 12A 5X6 PQFN

Infineon Technologies
2,985 -

RFQ

IRFH8334TR2PBF

Ficha técnica

Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta), 44A (Tc) - 9mOhm @ 20A, 10V 2.35V @ 25µA 15 nC @ 10 V - 1180 pF @ 10 V - - - Surface Mount
IRFH8337TR2PBF

IRFH8337TR2PBF

MOSFET N-CH 30V 9.7A 5X6 PQFN

Infineon Technologies
2,114 -

RFQ

IRFH8337TR2PBF

Ficha técnica

Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta), 35A (Tc) - 12.8mOhm @ 16.2A, 10V 2.35V @ 25µA 10 nC @ 10 V - 790 pF @ 10 V - - - Surface Mount
IRLHS2242TR2PBF

IRLHS2242TR2PBF

MOSFET P-CH 20V 5.8A 2X2 PQFN

Infineon Technologies
3,615 -

RFQ

IRLHS2242TR2PBF

Ficha técnica

Cut Tape (CT) - Obsolete P-Channel MOSFET (Metal Oxide) 20 V 7.2A (Ta), 15A (Tc) - 31mOhm @ 8.5A, 4.5V 1.1V @ 10µA 12 nC @ 10 V - 877 pF @ 10 V - - - Surface Mount
IRFH8337TRPBF

IRFH8337TRPBF

MOSFET N-CH 30V 12A/35A PQFN

Infineon Technologies
3,733 -

RFQ

IRFH8337TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta), 35A (Tc) 4.5V, 10V 12.8mOhm @ 16.2A, 10V 2.35V @ 25µA 10 nC @ 10 V ±20V 790 pF @ 10 V - 3.2W (Ta), 27W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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