Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BUZ32 H

BUZ32 H

MOSFET N-CH 200V 9.5A TO220-3

Infineon Technologies
3,049 -

RFQ

BUZ32 H

Ficha técnica

Tube SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9.5A (Tc) 10V 400mOhm @ 6A, 10V 4V @ 1mA - ±20V 530 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
BUZ73HXKSA1

BUZ73HXKSA1

MOSFET N-CH 200V 7A TO220-3

Infineon Technologies
3,896 -

RFQ

BUZ73HXKSA1

Ficha técnica

Bulk,Tube SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 7A (Tc) 10V 400mOhm @ 4.5A, 10V 4V @ 1mA - ±20V 530 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
BUZ73H3046XKSA1

BUZ73H3046XKSA1

MOSFET N-CH 200V 7A TO220-3

Infineon Technologies
2,333 -

RFQ

BUZ73H3046XKSA1

Ficha técnica

Tube SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 7A (Tc) 10V 400mOhm @ 4.5A, 10V 4V @ 1mA - ±20V 530 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
BUZ73A H

BUZ73A H

MOSFET N-CH 200V 5.5A TO220-3

Infineon Technologies
3,974 -

RFQ

BUZ73A H

Ficha técnica

Tube SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 5.5A (Tc) 10V 600mOhm @ 4.5A, 10V 4V @ 1mA - ±20V 530 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
BUZ73A H3046

BUZ73A H3046

MOSFET N-CH 200V 5.5A TO220-3

Infineon Technologies
2,875 -

RFQ

BUZ73A H3046

Ficha técnica

Tube SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 5.5A (Tc) 10V 600mOhm @ 4.5A, 10V 4V @ 1mA - ±20V 530 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
BUZ73ALHXKSA1

BUZ73ALHXKSA1

MOSFET N-CH 200V 5.5A TO220-3

Infineon Technologies
5,846 -

RFQ

BUZ73ALHXKSA1

Ficha técnica

Tube,Tube SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 5.5A (Tc) 5V 600mOhm @ 3.5A, 5V 2V @ 1mA - ±20V 840 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
BUZ73LHXKSA1

BUZ73LHXKSA1

MOSFET N-CH 200V 7A TO220-3

Infineon Technologies
2,450 -

RFQ

BUZ73LHXKSA1

Ficha técnica

Tube SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 7A (Tc) 5V 400mOhm @ 3.5A, 5V 2V @ 1mA - ±20V 840 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA65R190C6XKSA1

IPA65R190C6XKSA1

MOSFET N-CH 650V 20.2A TO220

Infineon Technologies
3,628 -

RFQ

IPA65R190C6XKSA1

Ficha técnica

Tube,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 20.2A (Tc) 10V 190mOhm @ 7.3A, 10V 3.5V @ 730µA 73 nC @ 10 V ±20V 1620 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA65R600C6XKSA1

IPA65R600C6XKSA1

MOSFET N-CH 650V 7.3A TO220

Infineon Technologies
2,787 -

RFQ

IPA65R600C6XKSA1

Ficha técnica

Tube,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 7.3A (Tc) 10V 600mOhm @ 2.1A, 10V 3.5V @ 210µA 23 nC @ 10 V ±20V 440 pF @ 100 V - 28W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI100N04S4H2AKSA1

IPI100N04S4H2AKSA1

MOSFET N-CH 40V 100A TO262-3

Infineon Technologies
18,000 -

RFQ

IPI100N04S4H2AKSA1

Ficha técnica

Tube,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 2.7mOhm @ 100A, 10V 4V @ 70µA 90 nC @ 10 V ±20V 7180 pF @ 25 V - 115W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI50R250CPXKSA1

IPI50R250CPXKSA1

MOSFET N-CH 500V 13A TO262-3

Infineon Technologies
985 -

RFQ

IPI50R250CPXKSA1

Ficha técnica

Tube,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 13A (Tc) 10V 250mOhm @ 7.8A, 10V 3.5V @ 520µA 36 nC @ 10 V ±20V 1420 pF @ 100 V - 114W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI50R299CPXKSA1

IPI50R299CPXKSA1

MOSFET N-CH 500V 12A TO262-3

Infineon Technologies
3,054 -

RFQ

IPI50R299CPXKSA1

Ficha técnica

Tube,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 12A (Tc) 10V 299mOhm @ 6.6A, 10V 3.5V @ 440µA 31 nC @ 10 V ±20V 1190 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI530N15N3GXKSA1

IPI530N15N3GXKSA1

MOSFET N-CH 150V 21A TO262-3

Infineon Technologies
2,907 -

RFQ

IPI530N15N3GXKSA1

Ficha técnica

Bulk,Tube OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 150 V 21A (Tc) 8V, 10V 53mOhm @ 18A, 10V 4V @ 35µA 12 nC @ 10 V ±20V 887 pF @ 75 V - 68W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI65R110CFDXKSA1

IPI65R110CFDXKSA1

MOSFET N-CH 650V 31.2A TO262-3

Infineon Technologies
16,398 -

RFQ

IPI65R110CFDXKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 31.2A (Tc) 10V 110mOhm @ 12.7A, 10V 4.5V @ 1.3mA 118 nC @ 10 V ±20V 3240 pF @ 100 V - 277.8W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI65R280C6XKSA1

IPI65R280C6XKSA1

MOSFET N-CH 650V 13.8A TO262-3

Infineon Technologies
1,500 -

RFQ

IPI65R280C6XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 13.8A (Tc) 10V 280mOhm @ 4.4A, 10V 3.5V @ 440µA 45 nC @ 10 V ±20V 950 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
ISP16DP10LMXTSA1

ISP16DP10LMXTSA1

SMALL SIGNAL MOSFETS PG-SOT223-4

Infineon Technologies
3,533 -

RFQ

ISP16DP10LMXTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 100 V 2.1A (Ta), 3.9A (Tc) 4.5V, 10V 160mOhm @ 2.2A, 10V 2V @ 1.037mA 42 nC @ 10 V ±20V 2100 pF @ 50 V - 1.8W (Ta), 5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSZ035N03MSGATMA1

BSZ035N03MSGATMA1

MOSFET N-CH 30V 18A/40A 8TSDSON

Infineon Technologies
3,325 -

RFQ

BSZ035N03MSGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 18A (Ta), 40A (Tc) 4.5V, 10V 3.5mOhm @ 20A, 10V 2V @ 250µA 74 nC @ 10 V ±20V 5700 pF @ 15 V - 2.1W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPI65R310CFDXKSA1

IPI65R310CFDXKSA1

MOSFET N-CH 650V 11.4A TO262-3

Infineon Technologies
14,500 -

RFQ

IPI65R310CFDXKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 11.4A (Tc) 10V 310mOhm @ 4.4A, 10V 4.5V @ 440µA 41 nC @ 10 V ±20V 1100 pF @ 100 V - 104.2W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI65R420CFDXKSA1

IPI65R420CFDXKSA1

MOSFET N-CH 650V 8.7A TO262-3

Infineon Technologies
3,372 -

RFQ

IPI65R420CFDXKSA1

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 8.7A (Tc) 10V 420mOhm @ 3.4A, 10V 4.5V @ 340µA 32 nC @ 10 V ±20V 870 pF @ 100 V - 83.3W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI65R600C6XKSA1

IPI65R600C6XKSA1

MOSFET N-CH 650V 7.3A TO262-3

Infineon Technologies
2,142 -

RFQ

IPI65R600C6XKSA1

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 7.3A (Tc) 10V 600mOhm @ 2.1A, 10V 3.5V @ 210µA 23 nC @ 10 V ±20V 440 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) Through Hole
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1500+ Média diária de RFQ
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1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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